High‐resolution x‐ray diffraction measurements of residual stresses in polycrystalline thin films deposited on single crystalline substrates

1996 ◽  
Vol 69 (27) ◽  
pp. 4242-4244 ◽  
Author(s):  
M. Levit ◽  
E. Zolotoyabko ◽  
B.‐Z. Weiss
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Residual Stresses ◽  
X Ray Diffraction ◽  
Single Crystalline ◽  
X Ray ◽  
Polycrystalline Thin Films

X-ray Diffraction Studies of Polycrystalline Thin Films Using Glancing Angle Diffractometry

1988 ◽  
Vol 32 ◽  
pp. 311-321 ◽  
Author(s):  
R.A. Larsen ◽  
T.F. McNulty ◽  
R.P. Goehner ◽  
K.R. Crystal
Keyword(s):  
Thin Films ◽  
Deep Penetration ◽  
X Ray Diffraction ◽  
Parallel Beam ◽  
X Ray ◽  
Beam Geometry ◽  
Polycrystalline Thin Films ◽  
Glancing Angle ◽  
Parallel Beam Geometry

AbstractThe use of conventional θ/2θ diffraction methods for the characterization of polycrystalline thin films is not in general a satisfactory technique due to the relatively deep penetration of x-ray photons in most materials. Glancing incidence diffraction (GID) can compensate for the penetration problems inherent in the θ/2θ geometry. Parallel beam geometry has been developed in conjunction with GID to eliminate the focusing aberrations encountered when performing these types of measurements. During the past yearwe developed a parallel beam attachment which we have successfully configured to a number of systems.

A Novel Technique to Determine Elastic Constants of Thin Films

2008 ◽  
Vol 1139 ◽  
Author(s):  
Klaus Martinschitz ◽  
Rostislav Daniel ◽  
Christian Mitterer ◽  
Keckes Jozef
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Elastic Moduli ◽  
Elastic Anisotropy ◽  
Interaction Model ◽  
X Ray Diffraction ◽  
X Ray ◽  
Anisotropic Factor ◽  
Polycrystalline Thin Films ◽  
Cu Thin Film

AbstractA new X-ray diffraction technique to determine elastic moduli of polycrystalline thin films deposited on monocrystalline substrates is demonstrated. The technique is based on the combination of sin2ψ and X-ray diffraction wafer curvature techniques which are used to characterize X-ray elastic strains and macroscopic stress in thin film. The strain measurements must be performed for various hkl reflections. The stresses are determined from the substrate curvature applying the Stoney's equation. The stress and strain values are used to calculate hkl reflection dependent X-ray elastic moduli. The mechanical elastic moduli can be then extrapolated from X-ray elastic moduli considering film macroscopic elastic anisotropy. The derived approach shows for which reflection and corresponding value of the X-ray anisotropic factor Γ the X-ray elastic moduli are equal to their mechanical counterparts in the case of fibre textured cubic polycrystalline aggregates. The approach is independent of the crystal elastic anisotropy and depends on the fibre texture type, the texture sharpness, the amount of randomly oriented crystallites and on the supposed grain interaction model. The new method is demonstrated on a fiber textured Cu thin film deposited on monocrystalline Si(100) substrate. The advantage of the new technique remains in the fact that moduli are determined non-destructively, using a static diffraction experiment and represent volume averaged quantities.

Influence of deposition parameters on the residual stresses of WC-Wo sputtered thin films

MRS Advances ◽  
2020 ◽  
Vol 5 (23-24) ◽  
pp. 1215-1223
Author(s):  
R.R. Phiri ◽  
O.P. Oladijo ◽  
E.T. Akinlabi
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Residual Stresses ◽  
Substrate Surface ◽  
Tribological Performance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Compressive Stresses ◽  
Deposition Parameters ◽  
Cobalt Thin Films

AbstractControl and manipulation of residual stresses in thin films is a key for attaining coatings with high mechanical and tribological performance. It is therefore imperative to have reliable residual stress measurements methods to further understand the dynamics involved. The sin2ψ method of X-ray diffraction was used to investigate the residual stresses on the tungsten carbide cobalt thin films deposited on a mild steel surface to understand the how the deposition parameters influence the generation of residual stresses within the substrate surface. X-ray spectra of the surface revealed an amorphous phase of the thin film therefore the stress measured was of the substrate surface and the effects of sputtering parameters on residual stress were analysed. Compressive stresses were identified within all samples studied. The results reveal that as the sputtering parameters are varied, the residual stresses also change. Optimum deposition parameters in terms of residual stresses were suggested.

Characterization of Physical Properties of Thermally Evaporated Doped CdS Thin Films for Photovoltaics

2012 ◽  
Vol 510-511 ◽  
pp. 156-162 ◽  
Author(s):  
G.H. Tariq ◽  
M. Anis-ur-Rehman
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Window Layer ◽  
Bandgap Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Polycrystalline Thin Films ◽  
Cds Thin Film ◽  
Cds Thin Films ◽  
Evaporation Technique

Polycrystalline thin films of Cadmium Sulfide (CdS) have been extensively studied for application as a window layer in CdTe/CdS and CIGS/CdS thin film solar cells. Higher efficiency of solar cells is possible by a better conductivity of a window layer, which can be achieved by doping these films with suitable elements. CdS thin films were deposited on properly cleaned glass substrate by thermal evaporation technique under vacuum2×10-5mbar. Films were structurally characterized by using X-ray diffraction. The X-ray diffraction spectra showed that the thin films were polycrystalline in nature. Aluminum was doped chemically in as deposited and annealed thin films by immersing films in AlNO33.9H2O solutions respectively. Comparison between the effects of different doping ratios on the structural and optical properties of the films was investigated. Higher doping ratios have improved the electrical properties by decreasing the resistivity of the films and slightly changed the bandgap energy Eg. The grain size, strain, and dislocation density were calculated for as-deposited and annealed films.

X-ray diffraction analysis of residual stresses in textured ZnO thin films

2017 ◽  
Vol 395 ◽  
pp. 16-23 ◽  
Author(s):  
E. Dobročka ◽  
P. Novák ◽  
D. Búc ◽  
L. Harmatha ◽  
J. Murín
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Diffraction Analysis ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray

High resolution X-ray diffraction investigation of epitaxially grown SrTiO 3 thin films by laser-MBE

2009 ◽  
Vol 33 (11) ◽  
pp. 949-953
Author(s):  
Zhai Zhang-Yin ◽  
Wu Xiao-Shan ◽  
Jia Quan-Jie
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Laser Mbe

X-Ray Diffraction and TEM Studies of the Delamination of Copper Thin Films from Glass and Silica Substrates

1989 ◽  
Vol 167 ◽  
Author(s):  
Alan G. Fox ◽  
Rowland M. Cannon
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Bragg Diffraction ◽  
Slight Reduction ◽  
X Ray Diffraction ◽  
Dislocation Generation ◽  
X Ray ◽  
Cu Films ◽  
Glass Substrates ◽  
Tensile Strains

AbstractThe events associated with fractures along interfaces between copper thin films and glass substrates were investigated by X-ray diffraction and transmission electron microscopy (TEM). In the as-bonded films the Bragg diffraction lines were shifted and broadened (relative to pure strain-free copper) due to residual in-plane tensile strains arising from the differences in thermal contraction between the copper and the substrates; TEM studies of these films in cross-section showed that the residual stresses had been relieved somewhat by dislocation densities as high as 1010 lines/cm2 in Cu/SiO2 films.The passage of a crack along the Cu/glass interfaces led to a significant reduction in the line shift and a slight reduction in the line broadening. Thus dislocations generated by the fracture events ‘plastically relaxed’ the residual stresses present in the as-bonded Cu by superposing a compressive component onto the pre-existing in-plane tensile strains. This dislocation generation was confirmed by TEM studies. In addition, it was found that the greater the strength of an interface, the greater was the reduction in mean strain due to the fracture; this is consistent with a larger crack-tip plastic zone and the generation of greater numbers of dislocations in the Cu films by fracture along interfaces of higher toughness (i.e. bond strength).

scholarly journals High-resolution X-ray diffraction analysis of strain relaxation in epitaxial oxide thin films

2008 ◽  
Vol 64 (a1) ◽  
pp. C106-C106
Author(s):  
R. Guinebretiere ◽  
F. Conchon ◽  
A. Boulle ◽  
C. Girardot ◽  
S. Pignard ◽  
...  
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Diffraction Analysis ◽  
Strain Relaxation ◽  
X Ray Diffraction ◽  
Oxide Thin Films ◽  
X Ray ◽  
Epitaxial Oxide
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