High-power room-temperature Pr/sup 3+/,Yb/sup 3+/:LiYF/sub 4/ upconversion laser in the visible spectral range

2000 ◽  
Author(s):  
E. Heumann ◽  
S. Kueck ◽  
G. Huber
Keyword(s):  
Spectral Range ◽  
High Power ◽  
Room Temperature ◽  
Visible Spectral Range

Room‐temperature cw operation in the visible spectral range of 680–700 nm by AlGaAs double heterojunction lasers

1982 ◽  
Vol 41 (9) ◽  
pp. 796-798 ◽  
Author(s):  
S. Yamamoto ◽  
H. Hayashi ◽  
T. Hayakawa ◽  
N. Miyauchi ◽  
S. Yano ◽  
...  
Keyword(s):  
Spectral Range ◽  
Room Temperature ◽  
Visible Spectral Range ◽  
Cw Operation ◽  
Double Heterojunction

Widely tunable, high power, femtosecond non-collinear optical parametric oscillator in the visible spectral range

2021 ◽  
Author(s):  
Robin Mevert ◽  
Yuliya Binhammer ◽  
Christian Dietrich ◽  
Luise Beichert ◽  
Thomas Binhammer ◽  
...  
Keyword(s):  
Spectral Range ◽  
High Power ◽  
Optical Parametric Oscillator ◽  
Visible Spectral Range ◽  
Parametric Oscillator ◽  
Optical Parametric

HIGH POWER TYPE-I GASB-BASED LASERS

2006 ◽  
Vol 16 (02) ◽  
pp. 597-605
Author(s):  
G. BELENKY ◽  
L. SHTERENGAS ◽  
J. G. KIM ◽  
R. U. MARTINELLI ◽  
S. SUCHALKIN
Keyword(s):  
Spectral Range ◽  
High Power ◽  
Room Temperature ◽  
Type I ◽  
Dilute Nitride ◽  
Power Performance ◽  
Low Threshold ◽  
Linear Laser ◽  
Fundamental Limitation

Challenges and limitations in development of the mid-infrared room temperature CW operated diode lasers with wavelength longer than 2 μm are discussed. The major breakthrough in terms of high power performance in this spectral range was achieved with type-I true quaternary InGaAsSb heavily compressively strained QW GaSb -based lasers. We have demonstrated 1 W CW at 2.5 μm, 500 mW and 160 mW CW at 2.7 and 2.8 μm, respectively. High power 2.3 μm linear laser arrays output 10W CW at room temperature. Experimental results show that there is no fundamental limitation to extend CW RT operating wavelength of these devices to over 3 μm spectral region. It is carrier leakage and material quality issues that limit device performance at wavelength longer than 2.5 μm. The role of Auger recombination is not decisive in type-I MQW GaSb -based lasers. We speculate that it is high differential gain and, as a result, low threshold carrier concentration that can account for muted effect of Auger on type-I GaSb -based laser performance. Dilute-nitride GaSb -based type-I QWs are proposed for development of CW room temperature operated lasers in spectral range 3 - 4 μm.

scholarly journals MoS2 Based Photodetectors: A Review

Sensors ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 2758
Author(s):  
Alberto Taffelli ◽  
Sandra Dirè ◽  
Alberto Quaranta ◽  
Lucio Pancheri
Keyword(s):  
Electric Fields ◽  
Spectral Range ◽  
Performance Metrics ◽  
Transition Metal Dichalcogenides ◽  
Visible Spectral Range ◽  
Detector Performance ◽  
Strong Light ◽  
Near Ultraviolet ◽  
Passivation Layers ◽  
Low Dimensional

Photodetectors based on transition metal dichalcogenides (TMDs) have been widely reported in the literature and molybdenum disulfide (MoS2) has been the most extensively explored for photodetection applications. The properties of MoS2, such as direct band gap transition in low dimensional structures, strong light–matter interaction and good carrier mobility, combined with the possibility of fabricating thin MoS2 films, have attracted interest for this material in the field of optoelectronics. In this work, MoS2-based photodetectors are reviewed in terms of their main performance metrics, namely responsivity, detectivity, response time and dark current. Although neat MoS2-based detectors already show remarkable characteristics in the visible spectral range, MoS2 can be advantageously coupled with other materials to further improve the detector performance Nanoparticles (NPs) and quantum dots (QDs) have been exploited in combination with MoS2 to boost the response of the devices in the near ultraviolet (NUV) and infrared (IR) spectral range. Moreover, heterostructures with different materials (e.g., other TMDs, Graphene) can speed up the response of the photodetectors through the creation of built-in electric fields and the faster transport of charge carriers. Finally, in order to enhance the stability of the devices, perovskites have been exploited both as passivation layers and as electron reservoirs.

scholarly journals Force detection of high-frequency electron spin resonance near room temperature using high-power millimeter-wave source gyrotron

2021 ◽  
Vol 118 (2) ◽  
pp. 022407
Author(s):  
Hideyuki Takahashi ◽  
Yuya Ishikawa ◽  
Tsubasa Okamoto ◽  
Daiki Hachiya ◽  
Kazuki Dono ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Millimeter Wave ◽  
Electron Spin ◽  
High Power ◽  
High Frequency ◽  
Room Temperature ◽  
Force Detection ◽  
Wave Source ◽  
Spin Resonance ◽  
Millimeter Wave Source

A New Tunnel-Type V4O9 Cathode for High Power Density Aqueous Zinc Ion Batteries

2021 ◽  
Author(s):  
Qiaoran Wang ◽  
Tianjiang Sun ◽  
Shibing Zheng ◽  
Lin Li ◽  
Tao Ma ◽  
...  
Keyword(s):  
Power Density ◽  
Vanadium Pentoxide ◽  
High Power ◽  
Room Temperature ◽  
Zinc Ion ◽  
High Power Density ◽  
Tunnel Structure

The mixed valences V4O9 with tunnel structure and room temperature metallic properties are prepared via partially reducing vanadium pentoxide. The unique tunnel structure and metallic characteristics are beneficial to the...

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