Room‐temperature cw operation in the visible spectral range of 680–700 nm by AlGaAs double heterojunction lasers

1982 ◽  
Vol 41 (9) ◽  
pp. 796-798 ◽  
Author(s):  
S. Yamamoto ◽  
H. Hayashi ◽  
T. Hayakawa ◽  
N. Miyauchi ◽  
S. Yano ◽  
...  
Keyword(s):  
Spectral Range ◽  
Room Temperature ◽  
Visible Spectral Range ◽  
Cw Operation ◽  
Double Heterojunction

Room‐temperature cw operation of InGaPAs/GaAlAs visible light double heterojunction lasers

1985 ◽  
Vol 46 (5) ◽  
pp. 455-457 ◽  
Author(s):  
Shinji Kaneiwa ◽  
Haruhisa Takiguchi ◽  
Toshiro Hayakawa ◽  
Saburo Yamamoto ◽  
Hiroshi Hayashi ◽  
...  
Keyword(s):  
Visible Light ◽  
Room Temperature ◽  
Cw Operation ◽  
Double Heterojunction

680 nm CW operation at room temperature by AlGaAs double heterojunction lasers

1983 ◽  
Vol 19 (6) ◽  
pp. 1009-1015 ◽  
Author(s):  
S. Yamamoto ◽  
H. Hayashi ◽  
T. Hayakawa ◽  
N. Miyauchi ◽  
S. Yano ◽  
...  
Keyword(s):  
Room Temperature ◽  
Cw Operation ◽  
Double Heterojunction

High optical power cw operation in visible spectral range by window V‐channeled substrate inner stripe lasers

1983 ◽  
Vol 42 (5) ◽  
pp. 406-408 ◽  
Author(s):  
S. Yamamoto ◽  
H. Hayashi ◽  
T. Hayakawa ◽  
N. Miyauchi ◽  
S. Yano ◽  
...  
Keyword(s):  
Spectral Range ◽  
Optical Power ◽  
Visible Spectral Range ◽  
Cw Operation

scholarly journals MoS2 Based Photodetectors: A Review

Sensors ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 2758
Author(s):  
Alberto Taffelli ◽  
Sandra Dirè ◽  
Alberto Quaranta ◽  
Lucio Pancheri
Keyword(s):  
Electric Fields ◽  
Spectral Range ◽  
Performance Metrics ◽  
Transition Metal Dichalcogenides ◽  
Visible Spectral Range ◽  
Detector Performance ◽  
Strong Light ◽  
Near Ultraviolet ◽  
Passivation Layers ◽  
Low Dimensional

Photodetectors based on transition metal dichalcogenides (TMDs) have been widely reported in the literature and molybdenum disulfide (MoS2) has been the most extensively explored for photodetection applications. The properties of MoS2, such as direct band gap transition in low dimensional structures, strong light–matter interaction and good carrier mobility, combined with the possibility of fabricating thin MoS2 films, have attracted interest for this material in the field of optoelectronics. In this work, MoS2-based photodetectors are reviewed in terms of their main performance metrics, namely responsivity, detectivity, response time and dark current. Although neat MoS2-based detectors already show remarkable characteristics in the visible spectral range, MoS2 can be advantageously coupled with other materials to further improve the detector performance Nanoparticles (NPs) and quantum dots (QDs) have been exploited in combination with MoS2 to boost the response of the devices in the near ultraviolet (NUV) and infrared (IR) spectral range. Moreover, heterostructures with different materials (e.g., other TMDs, Graphene) can speed up the response of the photodetectors through the creation of built-in electric fields and the faster transport of charge carriers. Finally, in order to enhance the stability of the devices, perovskites have been exploited both as passivation layers and as electron reservoirs.

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