CTX: A Clock-Gating-Based Test Relaxation and X-Filling Scheme for Reducing Yield Loss Risk in At-Speed Scan Testing

2008 ◽  
Author(s):  
H. Furukawa ◽  
X. Wen ◽  
K. Miyase ◽  
Y. Yamato ◽  
S. Kajihara ◽  
...  
Keyword(s):  
Yield Loss ◽  
Clock Gating ◽  
Scan Testing

scholarly journals High Launch Switching Activity Reduction in At-Speed Scan Testing Using CTX: A Clock-Gating-Based Test Relaxation and X-Filling Scheme

2010 ◽  
Vol E93-D (1) ◽  
pp. 2-9
Author(s):  
Kohei MIYASE ◽  
Xiaoqing WEN ◽  
Hiroshi FURUKAWA ◽  
Yuta YAMATO ◽  
Seiji KAJIHARA ◽  
...  
Keyword(s):  
Switching Activity ◽  
Clock Gating ◽  
Scan Testing ◽  
Switching Activity Reduction

Power-aware Test Generation for Reducing Yield Loss Risk in At-Speed Scan Testing

2019 ◽  
Vol 18 (1) ◽  
pp. 231-236
Author(s):  
Yuta Yamato ◽  
Xiaoqing Wen ◽  
Kohei Miyase ◽  
Hiroshi Furukawa ◽  
Seiji Kajihara
Keyword(s):  
Test Generation ◽  
Yield Loss ◽  
Scan Testing

CAT (Critical-Area-Targeted): A New Paradigm for Reducing Yield Loss Risk in At-Speed Scan Testing

2019 ◽  
Vol 27 (1) ◽  
pp. 197-202
Author(s):  
Xiaoqing Wen ◽  
K. Enokimoto ◽  
K. Miyase ◽  
S. Kajihara ◽  
M. Aso ◽  
...  
Keyword(s):  
Yield Loss ◽  
Critical Area ◽  
New Paradigm ◽  
Scan Testing

Elemental chlorine-free bleaching of North American hardwood kraft pulps: Evaluation of oxidant-reinforced extraction variables on overall bleaching optimization

TAPPI Journal ◽  
2013 ◽  
Vol 12 (10) ◽  
pp. 33-41 ◽  
Author(s):  
BRIAN N. BROGDON
Keyword(s):  
Response Surface ◽  
Chlorine Dioxide ◽  
North American ◽  
Yield Loss ◽  
Alkaline Extraction ◽  
Kraft Pulps ◽  
Pulp Bleaching ◽  
Response Surface Models ◽  
Elemental Chlorine ◽  
Surface Models

This investigation evaluates how higher reaction temperatures or oxidant reinforcement of caustic extraction affects chlorine dioxide consumption during elemental chlorine-free bleaching of North American hardwood pulps. Bleaching data from the published literature were used to develop statistical response surface models for chlorine dioxide delignification and brightening sequences for a variety of hardwood pulps. The effects of higher (EO) temperature and of peroxide reinforcement were estimated from observations reported in the literature. The addition of peroxide to an (EO) stage roughly displaces 0.6 to 1.2 kg chlorine dioxide per kilogram peroxide used in elemental chlorine-free (ECF) bleach sequences. Increasing the (EO) temperature by Δ20°C (e.g., 70°C to 90°C) lowers the overall chlorine dioxide demand by 0.4 to 1.5 kg. Unlike what is observed for ECF softwood bleaching, the presented findings suggest that hot oxidant-reinforced extraction stages result in somewhat higher bleaching costs when compared to milder alkaline extraction stages for hardwoods. The substitution of an (EOP) in place of (EO) resulted in small changes to the overall bleaching cost. The models employed in this study did not take into account pulp bleaching shrinkage (yield loss), to simplify the calculations.

Nanoprobe Characterization of Soft SRAM bit Fails in Advanced Technologies

2019 ◽  
Author(s):  
Satish Kodali ◽  
Chen Zhe ◽  
Chong Khiam Oh
Keyword(s):  
Yield Loss ◽  
Performance Metrics ◽  
Root Cause ◽  
Advanced Technologies ◽  
Capacitance Voltage ◽  
Defect Localization ◽  
Cv Measurements ◽  
Lightly Doped Drain ◽  
Dc Characterization

Abstract Nanoprobing is one of the key characterization techniques for soft defect localization in SRAM. DC transistor performance metrics could be used to identify the root cause of the fail mode. One such case report where nanoprobing was applied to a wafer impacted by significant SRAM yield loss is presented in this paper where standard FIB cross-section on hard fail sites and top down delayered inspection did not reveal any obvious defects. The authors performed nanoprobing DC characterization measurements followed by capacitance-voltage (CV) measurements. Two probe CV measurement was then performed between the gate and drain of the device with source and bulk floating. The authors identified valuable process marginality at the gate to lightly doped drain overlap region. Physical characterization on an inline split wafer identified residual deposits on the BL contacts potentially blocking the implant. Enhanced cleans for resist removal was implemented as a fix for the fail mode.

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