TiN metal hardmask etch residue removal with mask pullback and complete mask removal for Cu dual damascene device

2012 ◽  
Author(s):  
Hua Cui
Keyword(s):  
Residue Removal ◽  
Dual Damascene ◽  
Tin Metal ◽  
Etch Residue

TiN Metal Hardmask Etch Residue Removal on Advanced Porous Low-k and Cu Device with Corner Rounding Scheme

2012 ◽  
Vol 187 ◽  
pp. 241-244 ◽  
Author(s):  
Hua Cui ◽  
Martine Claes ◽  
Samuel Suhard
Keyword(s):  
Etch Rate ◽  
Room Temperature ◽  
Complete Removal ◽  
Cleaning Process ◽  
Residue Removal ◽  
Tin Metal ◽  
User Friendly ◽  
Low K ◽  
Etch Residue

A novel wet cleaning formulation approach was developed with a TiN etch rate of more than 30 Å/min at room temperature and more than 100 Å/min at 50°C. The chemicals are compatible with Cu and low-k materials, and are suitable for Cu dual damascene interconnect 28 nm and smaller technology node applications. The chemicals offer a route to in situ controlled TiN pullback or even complete removal of the TiN mask during the cleaning process in single wafer tool applications. The chemicals do not contain NH4OH or TMAH and so are very user-friendly.

TSV Resist and Residue Removal

2011 ◽  
Vol 2011 (DPC) ◽  
pp. 001596-001620
Author(s):  
Laura Mauer ◽  
John Taddei ◽  
Ramey Youssef ◽  
Kimberly Pollard ◽  
Allison Rector
Keyword(s):  
Reactive Ion Etching ◽  
3D Integration ◽  
Auger Analysis ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
Spray Process ◽  
Residue Removal ◽  
One Step ◽  
Silicon Vias ◽  
Etch Residue

3D integration is the most active methodology for increasing device performance. The ability to create Through Silicon Vias (TSV) provides the shortest path for interconnections and will result in increased device speed and reduced package footprint. There are numerous technical papers and presentations on the etching and filling of these vias, however the process for cleaning is seldom mentioned. Historically, after reactive ion etching (RIE), cleaning is accomplished using an ashing process to remove any remaining photoresist, followed by dipping the wafer in a solution-based post etch residue remover. However, in the case of TSV formation, deep reactive ion etching (DRIE) is used to create the vias. A byproduct of this etching process is the formation of a fluorinated passivation layer, often referred to as a fluoropolymer. The fluoropolymer is not easily removed using traditional post etch residue removers, thus creating the opportunity for new and improved formulations and processes for its removal. This paper will describe a robust cleaning process for one step removal of both the photoresist and sidewall polymer residues from TSVs. A combination soak and high pressure spray process using Dynastrip™ AP7880™-C, coupled with a megasonic final rinse provides clean results for high aspect ratio vias. SEM, EDX and Auger analysis will illustrate the cleanliness levels achieved.

Photoresist and Etch Residue Removal

2006 ◽  
Vol 153 (7) ◽  
pp. G712 ◽  
Author(s):  
Galit Levitin ◽  
Christopher Timmons ◽  
Dennis W. Hess
Keyword(s):  
Residue Removal ◽  
Etch Residue

Post Etch Residue Removal and Material Compatibility in BEOL Using Formulated Chemistries

2014 ◽  
Vol 219 ◽  
pp. 201-204 ◽  
Author(s):  
Els Kesters ◽  
Q.T. Le ◽  
D. Yu ◽  
M. Shen ◽  
S. Braun ◽  
...  
Keyword(s):  
Good Adhesion ◽  
Plasma Etch ◽  
Residue Removal ◽  
Fluorocarbon Plasma ◽  
Lift Off ◽  
Materials Used ◽  
Low K ◽  
Etch Residue ◽  
Processing Steps ◽  
Dielectric Degradation

A possible way to realize a 22.5 nm 1⁄2 pitch and beyond BEOL interconnect structures within the low-kmaterial is the partial-trench via first with self-aligned double patterning (SADP) integration approach. A scheme of this BEOL integration stack with the different materials used after patterning is described in Figure 1. In BEOL processing, fluorocarbon-containing plasma is commonly used to pattern silica-based dielectric layers. During the patterning of the low-kdielectric layer, a thin layer of fluoropolymer (CFx-type residues) is intentionally deposited on the dielectric sidewalls and TiN hardmask to ensure anisotropic etching and prevent/minimize dielectric degradation. This polymer layer must be removed from the sidewall and the via bottom prior to the subsequent processing steps to achieve good adhesion and coverage of materials deposited in the etched features. The compatibility requirement is even more stringent for advanced low-kdielectrics, i.e. materials with lowerk-value and higher porosity. The post etch residue (PER) amount and properties are specific and depend on the stack structure and the plasma that is used for patterning. The low-kmaterials and hardmasks that are used in this work are respectively an organo-silicate glass (OSG) type of low-kmaterial withk= 2.4 (~20 % open porosity) and low-stress TiN. Recent results clearly showed the presence of a highly fluorinated layer deposited on the trench sidewalls during the plasma etch based on a fluorocarbon plasma [1-3]. Commodity aqueous cleaning solutions, such as diluted HF, do not efficiently remove the sidewall polymers without etching the underlying layer (lift-off). Therefore, there is a need for commercially available chemicals that can be easily tuned to deal with the different requirements. This study focuses on the use of FOTOPUR® R 2300 mixed with H2O2 for polymer residue removal selectively to other materials (presented in the stack) such as MHM, metals (Cu, W), and porous low-k dielectrics. We will show that TiN etch can be easily tuned by changing the concentration of H2O2.

Effective Defect Control in TiN Metal Hard Mask Cu/Low-k Dual Damascene Process

2013 ◽  
Vol 58 (6) ◽  
pp. 143-150 ◽  
Author(s):  
A. Kabansky ◽  
S. S. H. Tan ◽  
E. A. Hudson ◽  
G. Delgadino ◽  
L. Gancs ◽  
...  
Keyword(s):  
Hard Mask ◽  
Dual Damascene ◽  
Damascene Process ◽  
Defect Control ◽  
Tin Metal ◽  
Low K

TiN Metal Hardmask Residue Removal Formulation Development for Advanced Porous Low-K and Cu Interconnect Application

2014 ◽  
Vol 219 ◽  
pp. 217-220 ◽  
Author(s):  
Hua Cui
Keyword(s):  
Aspect Ratio ◽  
Metal Deposition ◽  
Formulation Development ◽  
Chemical Cleaning ◽  
Residue Removal ◽  
Profile Control ◽  
Cu Interconnect ◽  
Tin Metal ◽  
Technology Nodes ◽  
Low K

TiN metal hardmask has been used to improve etch selectivity to low-k materials and thereby gain better profile control. For 14 nm and smaller technology nodes, it is required that the TiN hardmask is completely removed in order to improve the aspect ratio for subsequent reliable metal deposition. Thus, a chemical cleaning formulation with high TiN etch selectivity toward Cu and low-k is required.

Optimized Wetting Behavior of Water-Based Cleaning Solutions for Plasma Etch Residue Removal by Application of Surfactants

2012 ◽  
Vol 187 ◽  
pp. 201-205 ◽  
Author(s):  
Nicole Ahner ◽  
Sven Zimmermann ◽  
Matthias Schaller ◽  
Stefan E. Schulz
Keyword(s):  
Surface Energy ◽  
High Surface ◽  
Application Of Surfactants ◽  
Plasma Etch ◽  
Promising Alternative ◽  
Wetting Behavior ◽  
Residue Removal ◽  
Wet Chemical ◽  
Low K ◽  
Etch Residue

Wet chemical plasma etch residue removal is a promising alternative to low-k dielectric degrading plasma cleaning processes. With decreasing feature dimensions the wetting behavior of the liquid on low energetic surfaces present after dielectric patterning will be an important issue in developing wet cleaning solutions. High surface energy liquids may not only be unable to wet low energetic surfaces, but can also cause nonwetting of small structures or pattern collapse. The improvement of the wetting behavior of a cleaning liquid by lowering its surface energy by the addition of surfactants is the strategy followed in this study. We show that with choosing the appropriate rinsing solution a wet chemical process using surfactant aided cleaning solutions compatible to the materials used in BEOL (porous low-k, copper, barriers) can be found. The results show a distinct improvement of the wetting behavior of the modified solutions on several low energetic solid surfaces like copper or polymers deposited during dry etching.

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