Introduction of infrared spectroscopic ellipsometry in a semiconductor production environment

2003 ◽  
Author(s):  
P. Weidner ◽  
U. Mantz ◽  
P.Y. Guittet ◽  
R. Wienhold ◽  
M. Rimane ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Production Environment ◽  
Infrared Spectroscopic ◽  
Semiconductor Production

Infrared spectroscopic ellipsometry of micrometer-sized SiO 2 line gratings

2017 ◽  
Vol 416 ◽  
pp. 397-401
Author(s):  
Cordula Walder ◽  
Matthias Zellmeier ◽  
Jörg Rappich ◽  
Helge Ketelsen ◽  
Karsten Hinrichs
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Infrared Spectroscopic

scholarly journals Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry

2000 ◽  
Vol 5 (1) ◽  
Author(s):  
J. Šik ◽  
M. Schubert ◽  
T. Hofmann ◽  
V. Gottschalch
Keyword(s):  
Buffer Layer ◽  
Spectroscopic Ellipsometry ◽  
Nitrogen Concentration ◽  
Free Carrier ◽  
Strong Increase ◽  
Angle Of Incidence ◽  
Surface Polariton ◽  
Infrared Spectroscopic ◽  
Gaas Buffer Layer ◽  
Undoped Gaas

The infrared-optical properties of GaAs/GaNxAs1−x superlattice (SL) heterostructures (0 < x < 3.3%) are studied by variable angle-of-incidence infrared spectroscopic ellipsometry (IRSE) for wavenumbers from 250 cm−1 to 700 cm−1. The undoped SL structures where grown on top of a 300 nm thick undoped GaAs buffer layer on Te-doped (001) GaAs substrates by metal-organic vapor phase epitaxy (MOVPE). We observe the well-known Berreman-polariton effect within the GaAs LO-phonon region. We further observe a strong polariton-like resonance near the coupled longitudinal-optical plasmon-phonon frequency of the Te-doped substrate at 306 cm−1. For analysis of the IRSE data we employ the harmonic oscillator dielectric function model and the Drude model for free-carrier response. The additional resonance feature is explained by pseudo surface polariton (PSP) interface modes between the Te-doped GaAs and the undoped GaAs buffer layer / SL film. We find that the PSP modes are extremely sensitive to free-carrier properties within the SL structures, and we obtain a strong increase in free-carrier concentration within the GaNAs SL sublayers with increasing x from analysis of the IRSE data. We further observe the localized vibrational modes of nitrogen at 470 cm−1 in the GaNxAs1−x SL sublayers with a polar strength that increases linearly with x, and which can be used to monitor the nitrogen concentration in GaNxAs1−x.

Infrared spectroscopic ellipsometry in semiconductor manufacturing

2004 ◽  
Author(s):  
Pierre-Yves Guittet ◽  
Ulrich Mantz ◽  
Peter Weidner ◽  
Jean-Louis Stehle ◽  
Marc Bucchia ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Semiconductor Manufacturing ◽  
Infrared Spectroscopic
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