gaas epitaxial layer Latest Research Papers

Simple and direct estimation method for split‐off hole effective mass from Franz‐Keldysh oscillations appearing in photoreflectance spectra: Feasibility study using GaAs epitaxial layer structures at room temperature

Semiconductor Science and Technology ◽

10.1088/1361-6641/ac1b14 ◽

2021 ◽

Author(s):

Hideo Takeuchi ◽

Sotaro Fujiwara

Keyword(s):

Effective Mass ◽

Feasibility Study ◽

Epitaxial Layer ◽

Room Temperature ◽

Estimation Method ◽

Hole Effective Mass ◽

Direct Estimation ◽

Layer Structures ◽

Gaas Epitaxial Layer

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Plasma reflectivity of Pb1-xSnxTe/CdTe/GaAs epitaxial layer across band inversion point

Metamaterials XIII ◽

10.1117/12.2592375 ◽

2021 ◽

Author(s):

Wojciech Wołkanowicz ◽

Tomasz Story ◽

Michał Szot ◽

Jakub Polaczyński ◽

Karolina Karpińska ◽

...

Keyword(s):

Epitaxial Layer ◽

Inversion Point ◽

Band Inversion ◽

Gaas Epitaxial Layer

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Optically biased photoreflectance spectroscopy of a GaAs epitaxial layer and an AlGaAs/GaAs quantum well

Current Applied Physics ◽

10.1016/j.cap.2015.07.011 ◽

2015 ◽

Vol 15 (10) ◽

pp. 1226-1229

Author(s):

Geun-Hyeong Kim ◽

Hyun-Jun Jo ◽

Im Sik Han ◽

Jong Su Kim ◽

In-Ho Bae ◽

...

Keyword(s):

Quantum Well ◽

Epitaxial Layer ◽

Photoreflectance Spectroscopy ◽

Gaas Epitaxial Layer

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NMR spectroscopy with force-gradient detection on a GaAs epitaxial layer

Journal of Magnetic Resonance ◽

10.1016/j.jmr.2013.07.013 ◽

2013 ◽

Vol 235 ◽

pp. 66-70 ◽

Cited By ~ 1

Author(s):

Dimitri A. Alexson ◽

Doran D. Smith

Keyword(s):

Nmr Spectroscopy ◽

Epitaxial Layer ◽

Gaas Epitaxial Layer

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Time Evolution of Terahertz Electromagnetic Waves from Undoped GaAs/n-type GaAs Epitaxial Layer Structures Clarified with Use of a Time-Partitioning Fourier Transform Method

Physics Procedia ◽

10.1016/j.phpro.2012.03.687 ◽

2012 ◽

Vol 29 ◽

pp. 30-35

Author(s):

H. Takeuchi ◽

S. Tsuruta ◽

H. Yamada ◽

M. Hata ◽

M. Nakayama

Keyword(s):

Fourier Transform ◽

Time Evolution ◽

Epitaxial Layer ◽

Electromagnetic Waves ◽

Transform Method ◽

Fourier Transform Method ◽

Layer Structures ◽

Time Partitioning ◽

Undoped Gaas ◽

Gaas Epitaxial Layer

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Frequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond-range carrier-transport processes

Journal of Luminescence ◽

10.1016/j.jlumin.2010.09.022 ◽

2011 ◽

Vol 131 (3) ◽

pp. 531-534

Author(s):

H. Takeuchi ◽

J. Yanagisawa ◽

S. Tsuruta ◽

H. Yamada ◽

M. Hata ◽

...

Keyword(s):

Electromagnetic Wave ◽

Epitaxial Layer ◽

Carrier Transport ◽

Transport Processes ◽

Layer Structures ◽

Frequency Tunable ◽

Undoped Gaas ◽

Gaas Epitaxial Layer

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Simple strategy for enhancing terahertz emission from coherent longitudinal optical phonons using undoped GaAs/n -type GaAs epitaxial layer structures

physica status solidi (c) ◽

10.1002/pssc.201000396 ◽

2010 ◽

Vol 8 (2) ◽

pp. 343-345 ◽

Cited By ~ 2

Author(s):

H. Takeuchi ◽

J. Yanagisawa ◽

S. Tsuruta ◽

H. Yamada ◽

M. Hata ◽

...

Keyword(s):

Epitaxial Layer ◽

Longitudinal Optical ◽

Optical Phonons ◽

Terahertz Emission ◽

Simple Strategy ◽

Layer Structures ◽

Undoped Gaas ◽

Gaas Epitaxial Layer

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Frequency Shift of Terahertz Electromagnetic Waves Originating from Sub-Picosecond-Range Carrier Transport in Undoped GaAs/n-Type GaAs Epitaxial Layer Structures

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.082001 ◽

2010 ◽

Vol 49 (8) ◽

pp. 082001 ◽

Cited By ~ 4

Author(s):

Hideo Takeuchi ◽

Junichi Yanagisawa ◽

Syuuichi Tsuruta ◽

Hisashi Yamada ◽

Masahiko Hata ◽

...

Keyword(s):

Frequency Shift ◽

Epitaxial Layer ◽

Electromagnetic Waves ◽

Carrier Transport ◽

Layer Structures ◽

Undoped Gaas ◽

Gaas Epitaxial Layer

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Intense emission of terahertz electromagnetic wave from an undoped GaAs/n-type GaAs epitaxial layer structure

physica status solidi (c) ◽

10.1002/pssc.200881507 ◽

2009 ◽

Vol 6 (6) ◽

pp. 1513-1516

Author(s):

Hideo Takeuchi ◽

Junichi Yanagisawa ◽

Takayuki Hasegawa ◽

Masaaki Nakayama

Keyword(s):

Electromagnetic Wave ◽

Epitaxial Layer ◽

Layer Structure ◽

Intense Emission ◽

Undoped Gaas ◽

Gaas Epitaxial Layer

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Optical absorption coefficient of carbon-doped GaAs epitaxial layer by means of propagation -loss measurement of waveguide for long wavelength VCSEL

2009 IEEE International Conference on Indium Phosphide & Related Materials ◽

10.1109/iciprm.2009.5012436 ◽

2009 ◽

Cited By ~ 1

Author(s):

Takeo Kageyama ◽

Kazuaki Kiyota ◽

Hitoshi Shimizu ◽

Yasumasa Kawakita ◽

Norihiro Iwai ◽

...

Keyword(s):

Optical Absorption ◽

Absorption Coefficient ◽

Epitaxial Layer ◽

Propagation Loss ◽

Optical Absorption Coefficient ◽

Loss Measurement ◽

Long Wavelength ◽

Carbon Doped ◽

Gaas Epitaxial Layer

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gaas epitaxial layer
Recently Published Documents

TOTAL DOCUMENTS

H-INDEX

Simple and direct estimation method for split‐off hole effective mass from Franz‐Keldysh oscillations appearing in photoreflectance spectra: Feasibility study using GaAs epitaxial layer structures at room temperature

Plasma reflectivity of Pb1-xSnxTe/CdTe/GaAs epitaxial layer across band inversion point

Optically biased photoreflectance spectroscopy of a GaAs epitaxial layer and an AlGaAs/GaAs quantum well

NMR spectroscopy with force-gradient detection on a GaAs epitaxial layer

Time Evolution of Terahertz Electromagnetic Waves from Undoped GaAs/n-type GaAs Epitaxial Layer Structures Clarified with Use of a Time-Partitioning Fourier Transform Method

Frequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond-range carrier-transport processes

Simple strategy for enhancing terahertz emission from coherent longitudinal optical phonons using undoped GaAs/n -type GaAs epitaxial layer structures

Frequency Shift of Terahertz Electromagnetic Waves Originating from Sub-Picosecond-Range Carrier Transport in Undoped GaAs/n-Type GaAs Epitaxial Layer Structures

Intense emission of terahertz electromagnetic wave from an undoped GaAs/n-type GaAs epitaxial layer structure

Optical absorption coefficient of carbon-doped GaAs epitaxial layer by means of propagation -loss measurement of waveguide for long wavelength VCSEL

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gaas epitaxial layerRecently Published Documents

TOTAL DOCUMENTS

H-INDEX

Simple and direct estimation method for split‐off hole effective mass from Franz‐Keldysh oscillations appearing in photoreflectance spectra: Feasibility study using GaAs epitaxial layer structures at room temperature

Plasma reflectivity of Pb1-xSnxTe/CdTe/GaAs epitaxial layer across band inversion point

Optically biased photoreflectance spectroscopy of a GaAs epitaxial layer and an AlGaAs/GaAs quantum well

NMR spectroscopy with force-gradient detection on a GaAs epitaxial layer

Time Evolution of Terahertz Electromagnetic Waves from Undoped GaAs/n-type GaAs Epitaxial Layer Structures Clarified with Use of a Time-Partitioning Fourier Transform Method

Frequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond-range carrier-transport processes

Simple strategy for enhancing terahertz emission from coherent longitudinal optical phonons using undoped GaAs/n -type GaAs epitaxial layer structures

Frequency Shift of Terahertz Electromagnetic Waves Originating from Sub-Picosecond-Range Carrier Transport in Undoped GaAs/n-Type GaAs Epitaxial Layer Structures

Intense emission of terahertz electromagnetic wave from an undoped GaAs/n-type GaAs epitaxial layer structure

Optical absorption coefficient of carbon-doped GaAs epitaxial layer by means of propagation -loss measurement of waveguide for long wavelength VCSEL

gaas epitaxial layer
Recently Published Documents