Nondestructive measurement of thickness and carrier concentration of GaAs epitaxial layer using infrared spectroscopic ellipsometry

H. Nakano; T. Sakamoto; K. Taniguchi

doi:10.1063/1.366841

Nondestructive measurement of thickness and carrier concentration of GaAs epitaxial layer using infrared spectroscopic ellipsometry

Journal of Applied Physics ◽

10.1063/1.366841 ◽

1998 ◽

Vol 83 (3) ◽

pp. 1384-1389 ◽

Cited By ~ 6

Author(s):

H. Nakano ◽

T. Sakamoto ◽

K. Taniguchi

Keyword(s):

Carrier Concentration ◽

Epitaxial Layer ◽

Spectroscopic Ellipsometry ◽

Nondestructive Measurement ◽

Infrared Spectroscopic ◽

Measurement Of Thickness ◽

Gaas Epitaxial Layer

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Carrier Concentration and Thickness Measurements of n-Type GaAs Epitaxial Layer by Cell Voltage in Anodization

Japanese Journal of Applied Physics ◽

10.1143/jjap.25.432 ◽

1986 ◽

Vol 25 (Part 1, No. 3) ◽

pp. 432-434 ◽

Cited By ~ 1

Author(s):

Kazuo Masaki ◽

Shunsuke Miyamoto

Keyword(s):

Carrier Concentration ◽

Epitaxial Layer ◽

Cell Voltage ◽

Thickness Measurements ◽

Gaas Epitaxial Layer

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Probing the carrier concentration profiles in phosphorus-implanted germanium using infrared spectroscopic ellipsometry

Journal of Applied Physics ◽

10.1063/1.4913299 ◽

2015 ◽

Vol 117 (7) ◽

pp. 073103

Author(s):

Vijay Richard D'Costa ◽

Yee-Chia Yeo

Keyword(s):

Carrier Concentration ◽

Spectroscopic Ellipsometry ◽

Concentration Profiles ◽

Infrared Spectroscopic

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Long-wavelength dielectric properties and infrared active optical phonon modes of molecular beam epitaxy ScxAl1−xN determined by infrared spectroscopic ellipsometry

Applied Physics Letters ◽

10.1063/5.0027364 ◽

2020 ◽

Vol 117 (23) ◽

pp. 232107

Author(s):

Alyssa L. Mock ◽

Alan G. Jacobs ◽

Eric N. Jin ◽

Matthew T. Hardy ◽

Marko J. Tadjer

Keyword(s):

Dielectric Properties ◽

Molecular Beam Epitaxy ◽

Spectroscopic Ellipsometry ◽

Optical Phonon ◽

Molecular Beam ◽

Phonon Modes ◽

Long Wavelength ◽

Infrared Spectroscopic

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Infrared Spectroscopic Ellipsometry analysis of Nano-structured thin films in polymers and semiconductors

Applied Surface Science ◽

10.1016/j.apsusc.2009.09.060 ◽

2009 ◽

Vol 256 (3) ◽

pp. S72-S76 ◽

Cited By ~ 6

Author(s):

Jean Louis Stehle ◽

Jean Philippe Piel

Keyword(s):

Thin Films ◽

Spectroscopic Ellipsometry ◽

Infrared Spectroscopic

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Frequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond-range carrier-transport processes

Journal of Luminescence ◽

10.1016/j.jlumin.2010.09.022 ◽

2011 ◽

Vol 131 (3) ◽

pp. 531-534

Author(s):

H. Takeuchi ◽

J. Yanagisawa ◽

S. Tsuruta ◽

H. Yamada ◽

M. Hata ◽

...

Keyword(s):

Electromagnetic Wave ◽

Epitaxial Layer ◽

Carrier Transport ◽

Transport Processes ◽

Layer Structures ◽

Frequency Tunable ◽

Undoped Gaas ◽

Gaas Epitaxial Layer

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Formation of AlGaN and GaN epitaxial layer with high p-carrier concentration by pulse supply of source gases

AIP Advances ◽

10.1063/1.3698156 ◽

2012 ◽

Vol 2 (1) ◽

pp. 012177 ◽

Cited By ~ 10

Author(s):

Yoshinobu Aoyagi ◽

Misaichi Takeuchi ◽

Sohachi Iwai ◽

Hideki Hirayama

Keyword(s):

Carrier Concentration ◽

Epitaxial Layer ◽

Pulse Supply

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Introduction of infrared spectroscopic ellipsometry in a semiconductor production environment

Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI ◽

10.1109/asmc.2003.1194501 ◽

2003 ◽

Cited By ~ 1

Author(s):

P. Weidner ◽

U. Mantz ◽

P.Y. Guittet ◽

R. Wienhold ◽

M. Rimane ◽

...

Keyword(s):

Spectroscopic Ellipsometry ◽

Production Environment ◽

Infrared Spectroscopic ◽

Semiconductor Production

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Fourier-transform far-infrared spectroscopic ellipsometry for standoff material identification

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ◽

10.1016/j.nima.2010.02.079 ◽

2010 ◽

Vol 623 (2) ◽

pp. 791-793 ◽

Cited By ~ 1

Author(s):

Michele Ortolani ◽

Ulrich Schade

Keyword(s):

Fourier Transform ◽

Spectroscopic Ellipsometry ◽

Far Infrared ◽

Material Identification ◽

Infrared Spectroscopic

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An Accurate Measurement of Carrier Concentration in an Inhomogeneous GaN Epitaxial Layer from Hall Measurements

Physics of Semiconductor Devices - Environmental Science and Engineering ◽

10.1007/978-3-319-03002-9_197 ◽

2014 ◽

pp. 767-769 ◽

Cited By ~ 2

Author(s):

Abhishek Chatterjee ◽

Shailesh. K. Khamari ◽

V. K. Dixit ◽

T. K. Sharma ◽

S. M. Oak

Keyword(s):

Carrier Concentration ◽

Epitaxial Layer ◽

Hall Measurements

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Experimental investigation of 200 MeV 107Ag14+ ion induced modifications in n-GaAs epitaxial layer by in situ resistivity and Hall measurements

Materials Science and Engineering B ◽

10.1016/s0921-5107(01)00707-3 ◽

2001 ◽

Vol 86 (3) ◽

pp. 228-231 ◽

Cited By ~ 11

Author(s):

R. Singh ◽

S.K. Arora ◽

J.P. Singh ◽

Renu Tyagi ◽

S.K. Agarwal ◽

...

Keyword(s):

Experimental Investigation ◽

Epitaxial Layer ◽

Hall Measurements ◽

Gaas Epitaxial Layer

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