The influence of processing conditions on data retention behavior in a deep submicron NVM process

2003 ◽  
Author(s):  
M. Karnett ◽  
S. Qian ◽  
R. Solis ◽  
X. Tao ◽  
A. Black ◽  
...  
Keyword(s):  
Deep Submicron ◽  
Processing Conditions ◽  
Retention Behavior ◽  
Data Retention

The Effect of Passivation SiON Layer on the Data Retention Reliability of NAND Flash

2009 ◽  
Vol 1195 ◽  
Author(s):  
Younggeun Jang ◽  
Kwangwook Lee ◽  
Eunsoo Kim ◽  
Jonghye Cho ◽  
Jungmyoung Shim ◽  
...  
Keyword(s):  
Flash Memory ◽  
Silicon Oxynitride ◽  
Nand Flash ◽  
Retention Behavior ◽  
Nand Flash Memory ◽  
Data Retention ◽  
Retention Characteristic ◽  
Final Data ◽  
Two Parameters ◽  
Mobile Ions

AbstractData retention is one of the major device reliabilities of NAND Flash memory. We found that the lower Refractive Index (RI) of the Passivation Silicon Oxynitride (SiON) layer deposited by PECVD, the better data retention behavior was achieved. The hydrogen content and the stress analysis of the films are analyzed to find out which is more important in this case. Generally, when the RI of SiON decreases, both parameters also decrease, so it is impossible to find out which parameter is major factor of data retention. To analyze the effects of two parameters separately, we applied two conditions which had the same H contents but quite different stress values. The final data retention levels are same in both conditions. In addition, even if the layer has the same H content, the retention characteristic is changed by how hydrogen is bonded in the film. In conclusion, the data retention characteristic can be explained by mobile ions generated by the hydrogen weakly bonded in PECVD SiON films in our experiment.

An experimental study of data retention behavior in modern DRAM devices

2013 ◽  
Vol 41 (3) ◽  
pp. 60-71 ◽  
Author(s):  
Jamie Liu ◽  
Ben Jaiyen ◽  
Yoongu Kim ◽  
Chris Wilkerson ◽  
Onur Mutlu
Keyword(s):  
Experimental Study ◽  
Retention Behavior ◽  
Data Retention

Formation of defects in implanted hipox-structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1406-1407
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan
Keyword(s):  
High Pressure ◽  
Cross Section ◽  
Semiconductor Devices ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Pressure Oxidation ◽  
Deep Trench ◽  
Local Oxidation ◽  
Trench Isolation ◽  
And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

Study of the lipophilicity and retention behavior of some s-triazine derivatives on aminoplast and cellulose

2001 ◽  
Vol 14 (4) ◽  
pp. 277-282 ◽  
Author(s):  
Nada Perišić-Janjić ◽  
Lidija Jevrić ◽  
Gordana Bončić-Caričić ◽  
Bratislav Jovanović
Keyword(s):  
Retention Behavior ◽  
Triazine Derivatives
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