Highly selective oxide to nitride etch processes on BPSG/nitride/oxide structures in a MERIE etcher

Author(s):  
W. Graf ◽  
D. Basso ◽  
F. Gautier ◽  
J.M. Martin ◽  
E. Sabouret ◽  
...  
Keyword(s):  
1999 ◽  
Vol 38 (Part 1, No. 3A) ◽  
pp. 1441-1447 ◽  
Author(s):  
Hiroshi Aozasa ◽  
Ichiro Fujiwara ◽  
Akihiro Nakamura ◽  
Yasutoshi Komatsu

2008 ◽  
Vol 52 (6) ◽  
pp. 844-848 ◽  
Author(s):  
Seung-Hwan Seo ◽  
Se-Woon Kim ◽  
Jang-Uk Lee ◽  
Gu-Cheol Kang ◽  
Kang-Seob Roh ◽  
...  

1978 ◽  
Vol 32 (2) ◽  
pp. 175-177 ◽  
Author(s):  
L. Bradley ◽  
Y. M. Bosworth ◽  
D. Briggs ◽  
V. A. Gibson ◽  
R. J. Oldman ◽  
...  

The difficulties of nonuniform ion etching which hamper depth profiling by X-ray photoelectron spectroscopy (XPS) have been overcome by use of a mechanically scanned saddle-field ion source. The system and its calibration for uniformity are described, and its performance is illustrated by the depth profile of a Si3N4/SiO2/Si metal nitride oxide silicon device. This also allows the potential advantages of XPS profiling over Auger electron spectroscopy profiling to be discussed.


1973 ◽  
Vol 9 (11) ◽  
pp. 252-253 ◽  
Author(s):  
P.J.T. Mellor ◽  
P.J. Dunn
Keyword(s):  

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