Design and FDTD analysis of open-ended coaxial probes for broadband high-temperature dielectric properties measurements

2002 ◽  
Author(s):  
S. Bringhurst ◽  
H.F. Iskander ◽  
P. Gartside
Keyword(s):  
High Temperature ◽  
Dielectric Properties ◽  
Coaxial Probes

Fdtd Simulations And Analysis Of Thin Sample Dielectric Properties Measurements Using Coaxial Probes

1996 ◽  
Vol 430 ◽  
Author(s):  
S. Bringhurst ◽  
M. F. Iskander ◽  
M. J White
Keyword(s):  
High Temperature ◽  
Dielectric Properties ◽  
Frequency Band ◽  
Protective Layer ◽  
Alumina Tube ◽  
Nickel Plating ◽  
Thin Sample ◽  
Coaxial Probes ◽  
Fdtd Simulations ◽  
Complete Frequency

AbstractA metallized ceramic probe has been designed for high temperature broadband dielectric properties measurements. The probe was fabricated out of an alumina tube and rod as the outer and inner conductors respectively. The alumina was metallized with a 3 mil layer of moly-manganese and then covered with a 0.5 mil protective layer of nickel plating. The probe has been used to make complex dielectric properties measurements over the complete frequency band from 500 MHz to 3 GHz, and for temperatures as high as 1000 °C.

FDTD Simulation of an Open-Ended Metallized Ceramic Probe for Broadband High-Temperature Dielectric Properties Measurements

1994 ◽  
Vol 347 ◽  
Author(s):  
Shane Bringhurst ◽  
Magdy F. Iskander ◽  
Paul Gartside
Keyword(s):  
High Temperature ◽  
Dielectric Properties ◽  
Microwave Sintering ◽  
Fdtd Method ◽  
Fdtd Simulation ◽  
Minimum Thickness ◽  
University Of Utah ◽  
Coaxial Probes ◽  
On Line ◽  
The University

ABSTRACTOpen-ended coaxial probes have been used in broadband dielectric properties measurements for several years. To aid in the ongoing numerical simulation and microwave sintering research at the University of Utah, we have found it necessary to make dielectric properties measurements up to temperatures as high as 1400 °C. The available cavity perturbation techniques were unsuitable in this application due to their relatively narrow band, and the available metal probes are also unsuitable due to the differential thermal expansions of the inner and outer conductors, which makes it difficult to carry out accurate and on-line calibration procedures for these probes.To help us achieve both broadband and high-temperature dielectric properties measurements, we have developed a new metallized ceramic coaxial probe. The detailed design of this probe is described and the metallization procedure is discussed.Also to optimize the design of the probe and in particular to increase the penetration of fields in samples under test and hence improve the probe sensitivity to variation in properties of a larger class of materials, and to determine the required minimum thickness of various samples to obtain accurate results, we modeled and simulated the probe performance using the Finite-Difference Time-Domain (FDTD) method. Results from the FDTD simulation are presented and some guidelines that may be used to optimize the design of the probe are discussed.

Ferroelectric, piezoelectric, and dielectric properties of BiScO3-PbTiO3-Pb(Cd1/3Nb2/3)O3 ternary high temperature piezoelectric ceramics

2013 ◽  
Vol 114 (2) ◽  
pp. 027014 ◽  
Author(s):  
Tian-Long Zhao ◽  
Jianguo Chen ◽  
Chun-Ming Wang ◽  
Yang Yu ◽  
Shuxiang Dong
Keyword(s):  
High Temperature ◽  
Dielectric Properties ◽  
Piezoelectric Ceramics

Dielectric Properties of Solid Solutions of BiFeO3 with Pb(Ti, Zr)O3 at High Temperature and High Frequency

1968 ◽  
Vol 39 (1) ◽  
pp. 70-74 ◽  
Author(s):  
Robert T. Smith ◽  
Gary D. Achenbach ◽  
Robert Gerson ◽  
W. J. James
Keyword(s):  
High Temperature ◽  
Dielectric Properties ◽  
Solid Solutions ◽  
High Frequency

Improvement of Dielectric Performance of a Prototype AlN High Temperature Chip-level Package

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000052-000057 ◽  
Author(s):  
Liang-Yu Chen
Keyword(s):  
High Temperature ◽  
Dielectric Properties ◽  
High Temperatures ◽  
Substrate Surface ◽  
Substrate Material ◽  
Glass Coating ◽  
Temperature Dependent ◽  
High Temperature Electronics ◽  
Dielectric Performance ◽  
Parasitic Parameters

Aluminum nitride (AlN) has been proposed as a packaging substrate material for reliable high temperature electronics operating in a wide temperature range. However, it was discovered in a recent study that the dielectric properties of some commercial polycrystalline AlN materials change quite significantly with temperature at high temperatures. These material properties resulted in undesired large and temperature-dependent parasitic parameters for a prototype chip-level package based on an AlN substrate with the yttrium oxide dopant. This paper reports a method using a coating layer of a commercial thick-film glass on the AlN substrate surface to significantly reduce both the parasitic capacitances and parasitic conductances between neighboring inputs/outputs (I/Os) of a prototype AlN chip-level package. The parasitic parameters of 8-I/Os low power chip-level packages with the insulating glass coating were characterized at frequencies from 120 Hz to 1 MHz between room temperature and 500°C. These results were compared with the parameters of AlN packages without the glass coating. The results indicate that the parasitic capacitances and conductances between I/Os of the improved prototype AlN packages are significantly reduced and stable at high temperatures. The method using a glass coating provides a feasible way to mitigate the temperature dependence of dielectric properties of AlN and further utilize AlN as a reliable packaging substrate material for high temperature applications.

scholarly journals Characterization of AlN-based ceramic composites for use as millimeter-wave susceptor materials at high temperature: Dielectric properties of AlN:Mo with 0.25 vol% to 4.0 vol% Mo from 25 to 550 °C

2019 ◽  
Vol 34 (15) ◽  
pp. 2573-2581 ◽  
Author(s):  
Brad W. Hoff ◽  
Steven C. Hayden ◽  
Martin S. Hilario ◽  
Rachael O. Grudt ◽  
Frederick W. Dynys ◽  
...  
Keyword(s):  
High Temperature ◽  
Dielectric Properties ◽  
Millimeter Wave ◽  
Ceramic Composites ◽  
Image Position

Abstract

High Temperature Dielectric Properties of PMN‐PSN‐PZN Relaxors

2019 ◽  
Vol 256 (10) ◽  
pp. 1900050
Author(s):  
Jan Macutkevic ◽  
Stanislav Kamba ◽  
Kazimieras Glemza ◽  
Juras Banys ◽  
Karlis Bormanis ◽  
...  
Keyword(s):  
High Temperature ◽  
Dielectric Properties

High temperature lead-free BNT-based ceramics with stable energy storage and dielectric properties

2020 ◽  
Vol 8 (2) ◽  
pp. 683-692 ◽  
Author(s):  
Chaoqiong Zhu ◽  
Ziming Cai ◽  
Bingcheng Luo ◽  
Limin Guo ◽  
Longtu Li ◽  
...  
Keyword(s):  
High Temperature ◽  
Energy Storage ◽  
Dielectric Properties ◽  
Temperature Stability ◽  
Lead Free ◽  
Capacitance Variation

The designed 0.8BNTSZ–0.2NN ceramic demonstrates superb temperature stability with a capacitance variation <±15 from −55 °C to 545 °C.

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