scholarly journals Nb-Doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 Ceramics with Stable Dielectric Properties at High Temperature

Crystals ◽  
2017 ◽  
Vol 7 (6) ◽  
pp. 168 ◽  
Author(s):  
◽  
◽  
◽  
Keyword(s):  
High Temperature ◽  
Dielectric Properties

Ferroelectric, piezoelectric, and dielectric properties of BiScO3-PbTiO3-Pb(Cd1/3Nb2/3)O3 ternary high temperature piezoelectric ceramics

2013 ◽  
Vol 114 (2) ◽  
pp. 027014 ◽  
Author(s):  
Tian-Long Zhao ◽  
Jianguo Chen ◽  
Chun-Ming Wang ◽  
Yang Yu ◽  
Shuxiang Dong
Keyword(s):  
High Temperature ◽  
Dielectric Properties ◽  
Piezoelectric Ceramics

Dielectric Properties of Solid Solutions of BiFeO3 with Pb(Ti, Zr)O3 at High Temperature and High Frequency

1968 ◽  
Vol 39 (1) ◽  
pp. 70-74 ◽  
Author(s):  
Robert T. Smith ◽  
Gary D. Achenbach ◽  
Robert Gerson ◽  
W. J. James
Keyword(s):  
High Temperature ◽  
Dielectric Properties ◽  
Solid Solutions ◽  
High Frequency

Improvement of Dielectric Performance of a Prototype AlN High Temperature Chip-level Package

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000052-000057 ◽  
Author(s):  
Liang-Yu Chen
Keyword(s):  
High Temperature ◽  
Dielectric Properties ◽  
High Temperatures ◽  
Substrate Surface ◽  
Substrate Material ◽  
Glass Coating ◽  
Temperature Dependent ◽  
High Temperature Electronics ◽  
Dielectric Performance ◽  
Parasitic Parameters

Aluminum nitride (AlN) has been proposed as a packaging substrate material for reliable high temperature electronics operating in a wide temperature range. However, it was discovered in a recent study that the dielectric properties of some commercial polycrystalline AlN materials change quite significantly with temperature at high temperatures. These material properties resulted in undesired large and temperature-dependent parasitic parameters for a prototype chip-level package based on an AlN substrate with the yttrium oxide dopant. This paper reports a method using a coating layer of a commercial thick-film glass on the AlN substrate surface to significantly reduce both the parasitic capacitances and parasitic conductances between neighboring inputs/outputs (I/Os) of a prototype AlN chip-level package. The parasitic parameters of 8-I/Os low power chip-level packages with the insulating glass coating were characterized at frequencies from 120 Hz to 1 MHz between room temperature and 500°C. These results were compared with the parameters of AlN packages without the glass coating. The results indicate that the parasitic capacitances and conductances between I/Os of the improved prototype AlN packages are significantly reduced and stable at high temperatures. The method using a glass coating provides a feasible way to mitigate the temperature dependence of dielectric properties of AlN and further utilize AlN as a reliable packaging substrate material for high temperature applications.

scholarly journals Characterization of AlN-based ceramic composites for use as millimeter-wave susceptor materials at high temperature: Dielectric properties of AlN:Mo with 0.25 vol% to 4.0 vol% Mo from 25 to 550 °C

2019 ◽  
Vol 34 (15) ◽  
pp. 2573-2581 ◽  
Author(s):  
Brad W. Hoff ◽  
Steven C. Hayden ◽  
Martin S. Hilario ◽  
Rachael O. Grudt ◽  
Frederick W. Dynys ◽  
...  
Keyword(s):  
High Temperature ◽  
Dielectric Properties ◽  
Millimeter Wave ◽  
Ceramic Composites ◽  
Image Position

Abstract

High Temperature Dielectric Properties of PMN‐PSN‐PZN Relaxors

2019 ◽  
Vol 256 (10) ◽  
pp. 1900050
Author(s):  
Jan Macutkevic ◽  
Stanislav Kamba ◽  
Kazimieras Glemza ◽  
Juras Banys ◽  
Karlis Bormanis ◽  
...  
Keyword(s):  
High Temperature ◽  
Dielectric Properties

High temperature lead-free BNT-based ceramics with stable energy storage and dielectric properties

2020 ◽  
Vol 8 (2) ◽  
pp. 683-692 ◽  
Author(s):  
Chaoqiong Zhu ◽  
Ziming Cai ◽  
Bingcheng Luo ◽  
Limin Guo ◽  
Longtu Li ◽  
...  
Keyword(s):  
High Temperature ◽  
Energy Storage ◽  
Dielectric Properties ◽  
Temperature Stability ◽  
Lead Free ◽  
Capacitance Variation

The designed 0.8BNTSZ–0.2NN ceramic demonstrates superb temperature stability with a capacitance variation <±15 from −55 °C to 545 °C.

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