Ferroelectric, piezoelectric, and dielectric properties of BiScO3-PbTiO3-Pb(Cd1/3Nb2/3)O3 ternary high temperature piezoelectric ceramics

2013 ◽  
Vol 114 (2) ◽  
pp. 027014 ◽  
Author(s):  
Tian-Long Zhao ◽  
Jianguo Chen ◽  
Chun-Ming Wang ◽  
Yang Yu ◽  
Shuxiang Dong
Keyword(s):  
High Temperature ◽  
Dielectric Properties ◽  
Piezoelectric Ceramics

Dielectric Properties of Solid Solutions of BiFeO3 with Pb(Ti, Zr)O3 at High Temperature and High Frequency

1968 ◽  
Vol 39 (1) ◽  
pp. 70-74 ◽  
Author(s):  
Robert T. Smith ◽  
Gary D. Achenbach ◽  
Robert Gerson ◽  
W. J. James
Keyword(s):  
High Temperature ◽  
Dielectric Properties ◽  
Solid Solutions ◽  
High Frequency

A high temperature stable piezoelectric strain of KNN-based ceramics

2018 ◽  
Vol 6 (41) ◽  
pp. 19967-19973 ◽  
Author(s):  
Zhenyong Cen ◽  
Yu Huan ◽  
Wei Feng ◽  
Yan Yu ◽  
Peiyao Zhao ◽  
...  
Keyword(s):  
High Temperature ◽  
Solid State ◽  
Solid State Reaction ◽  
Piezoelectric Ceramics ◽  
Solid State Reaction Method ◽  
Lead Free ◽  
Conventional Solid State Reaction ◽  
Reaction Method ◽  
Piezoelectric Strain

Lead-free (1 − x)(0.96K0.46Na0.54Nb0.98Ta0.02O3–0.04Bi0.5(Na0.82K0.18)0.5ZrO3)–xCaZrO3 ((1 − x)(0.96KNNT–0.04BNKZ)–xCZ) piezoelectric ceramics were prepared by the conventional solid-state reaction method.

Improvement of Dielectric Performance of a Prototype AlN High Temperature Chip-level Package

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000052-000057 ◽  
Author(s):  
Liang-Yu Chen
Keyword(s):  
High Temperature ◽  
Dielectric Properties ◽  
High Temperatures ◽  
Substrate Surface ◽  
Substrate Material ◽  
Glass Coating ◽  
Temperature Dependent ◽  
High Temperature Electronics ◽  
Dielectric Performance ◽  
Parasitic Parameters

Aluminum nitride (AlN) has been proposed as a packaging substrate material for reliable high temperature electronics operating in a wide temperature range. However, it was discovered in a recent study that the dielectric properties of some commercial polycrystalline AlN materials change quite significantly with temperature at high temperatures. These material properties resulted in undesired large and temperature-dependent parasitic parameters for a prototype chip-level package based on an AlN substrate with the yttrium oxide dopant. This paper reports a method using a coating layer of a commercial thick-film glass on the AlN substrate surface to significantly reduce both the parasitic capacitances and parasitic conductances between neighboring inputs/outputs (I/Os) of a prototype AlN chip-level package. The parasitic parameters of 8-I/Os low power chip-level packages with the insulating glass coating were characterized at frequencies from 120 Hz to 1 MHz between room temperature and 500°C. These results were compared with the parameters of AlN packages without the glass coating. The results indicate that the parasitic capacitances and conductances between I/Os of the improved prototype AlN packages are significantly reduced and stable at high temperatures. The method using a glass coating provides a feasible way to mitigate the temperature dependence of dielectric properties of AlN and further utilize AlN as a reliable packaging substrate material for high temperature applications.

scholarly journals Characterization of AlN-based ceramic composites for use as millimeter-wave susceptor materials at high temperature: Dielectric properties of AlN:Mo with 0.25 vol% to 4.0 vol% Mo from 25 to 550 °C

2019 ◽  
Vol 34 (15) ◽  
pp. 2573-2581 ◽  
Author(s):  
Brad W. Hoff ◽  
Steven C. Hayden ◽  
Martin S. Hilario ◽  
Rachael O. Grudt ◽  
Frederick W. Dynys ◽  
...  
Keyword(s):  
High Temperature ◽  
Dielectric Properties ◽  
Millimeter Wave ◽  
Ceramic Composites ◽  
Image Position

Abstract

High Temperature Dielectric Properties of PMN‐PSN‐PZN Relaxors

2019 ◽  
Vol 256 (10) ◽  
pp. 1900050
Author(s):  
Jan Macutkevic ◽  
Stanislav Kamba ◽  
Kazimieras Glemza ◽  
Juras Banys ◽  
Karlis Bormanis ◽  
...  
Keyword(s):  
High Temperature ◽  
Dielectric Properties
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