Calculation of the HF characteristics in high electron mobility transistors by considering capture and escape phenomena in the Monte Carlo technique

2002 ◽  
Author(s):  
M. Abou-Khalil ◽  
D. Schreurs ◽  
T. Matsui ◽  
K. Wu
Keyword(s):  
Monte Carlo ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Monte Carlo Technique ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Scaling of pHEMTs to Decanano Dimensions

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 435-439 ◽  
Author(s):  
K. Kalna ◽  
A. Asenov ◽  
K. Elgaid ◽  
I. Thayne
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Limiting Factor ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

The effect of scaling into deep decanano dimensions on the performance of pseudomorphic high electron mobility transistors (pHEMTs) is extensively studied using Monte Carlo simulations. The scaling of devices with gate lengths of 120, 70, 50 and 30nm is performed in both lateral and vertical directions. The devices exhibit a significant improvement in transconductance during scaling, even though external resistances become a limiting factor.

Sign in / Sign up

Export Citation Format

Share Document