Monte Carlo based analysis of intermodulation distortion behavior in GaN–AlxGa1−xN high electron mobility transistors for microwave applications

2001 ◽  
Vol 90 (6) ◽  
pp. 3030-3037
Author(s):  
T. Li ◽  
R. P. Joshi ◽  
R. D. del Rosario ◽  
C. Fazi
Keyword(s):  
Monte Carlo ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Intermodulation Distortion ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Microwave Applications

scholarly journals Scaling of pHEMTs to Decanano Dimensions

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 435-439 ◽  
Author(s):  
K. Kalna ◽  
A. Asenov ◽  
K. Elgaid ◽  
I. Thayne
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Limiting Factor ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

The effect of scaling into deep decanano dimensions on the performance of pseudomorphic high electron mobility transistors (pHEMTs) is extensively studied using Monte Carlo simulations. The scaling of devices with gate lengths of 120, 70, 50 and 30nm is performed in both lateral and vertical directions. The devices exhibit a significant improvement in transconductance during scaling, even though external resistances become a limiting factor.

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