Quasi-two-dimension physic-topological model of field-effect transistors (FETs) in view of the self-heating effect

Fifth International Conference on Actual Problems of Electron Devices Engineering ◽

10.1109/apede.2002.1044901 ◽

2003 ◽

Author(s):

D.B. Sivyakov ◽

D.R. Boldirev

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

The Self ◽

Topological Model ◽

Heating Effect ◽

Two Dimension ◽

Self Heating

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The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

Technical Physics Letters ◽

10.1134/s1063785021060055 ◽

2021 ◽

Author(s):

A. E. Atamuratov ◽

B. O. Jabbarova ◽

M. M. Khalilloev ◽

A. Yusupov

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Silicon On Insulator ◽

The Self ◽

Heating Effect ◽

Self Heating

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β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect

Applied Physics Letters ◽

10.1063/1.5000735 ◽

2017 ◽

Vol 111 (9) ◽

pp. 092102 ◽

Cited By ~ 88

Author(s):

Hong Zhou ◽

Kerry Maize ◽

Gang Qiu ◽

Ali Shakouri ◽

Peide D. Ye

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Heating Effect ◽

Self Heating

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Investigation on Self-Heating Effect in Carbon Nanotube Field-Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2010.2090528 ◽

2011 ◽

Vol 58 (2) ◽

pp. 523-529 ◽

Cited By ~ 7

Author(s):

Chuan-Jia Xing ◽

Wen-Yan Yin ◽

Lei-Tao Liu ◽

Jun Huang

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistors ◽

Heating Effect ◽

Self Heating

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Electrothermal simulation of the self-heating effects in GaN-based field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2336299 ◽

2006 ◽

Vol 100 (5) ◽

pp. 054501 ◽

Cited By ~ 78

Author(s):

Valentin O. Turin ◽

Alexander A. Balandin

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

The Self ◽

Self Heating ◽

Heating Effects ◽

Electrothermal Simulation

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Concurrent analysis of self-heating effect and thermal stress in partially insulated field effect transistors (PiFETs)

2010 IEEE Electrical Design of Advanced Package & Systems Symposium ◽

10.1109/edaps.2010.5683047 ◽

2010 ◽

Author(s):

Ming Yi ◽

Wen-Yan Yin

Keyword(s):

Thermal Stress ◽

Field Effect ◽

Field Effect Transistors ◽

Heating Effect ◽

Self Heating ◽

Concurrent Analysis

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(Invited) High Performance β-Ga2O3 Nano-Membrane Field-Effect Transistors on Sapphire Substrate with Reduced Self-Heating Effect

ECS Meeting Abstracts ◽

10.1149/ma2018-01/23/1418 ◽

2018 ◽

Keyword(s):

Sapphire Substrate ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Heating Effect ◽

Self Heating

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Comparative study of self-heating effect on electron mobility in nano-scale strained silicon-on-insulator and strained silicon grown on relaxed SiGe-on-insulator n-metal–oxide–semiconductor field-effect transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/24/3/035014 ◽

2009 ◽

Vol 24 (3) ◽

pp. 035014 ◽

Cited By ~ 5

Author(s):

Seong-Je Kim ◽

Tae-Hun Shim ◽

Ki-Ryoung Choi ◽

Jea-Gun Park

Keyword(s):

Comparative Study ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Strained Silicon ◽

Heating Effect ◽

Self Heating

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Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.2172921 ◽

2006 ◽

Vol 24 (3) ◽

pp. 624-628 ◽

Cited By ~ 40

Author(s):

S. P. McAlister ◽

J. A. Bardwell ◽

S. Haffouz ◽

H. Tang

Keyword(s):

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Self Heating ◽

Dc Characteristics ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Simulating the Self-Heating Effect for MOSFETs with Various Configurations of Buried Oxide

Russian Microelectronics ◽

10.1134/s1063739719070102 ◽

2019 ◽

Vol 48 (7) ◽

pp. 467-469

Author(s):

K. O. Petrosyants ◽

D. A. Popov

Keyword(s):

The Self ◽

Heating Effect ◽

Self Heating ◽

Buried Oxide

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Strained-Si Mos Field-Effect Transistors: Building Devices on Relaxed -SI1−xGEx Buffer Layers

MRS Proceedings ◽

10.1557/proc-379-309 ◽

1995 ◽

Vol 379 ◽

Cited By ~ 1

Author(s):

Jeffrey J. Welser

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Buffer Layers ◽

Mos Transistors ◽

Strained Si ◽

Self Heating ◽

Experimental Application ◽

Heating Effects ◽

Enhanced Mobility ◽

Output Characteristics

ABSTRACTThe experimental application of strained-Si / relaxed-Si1−xGex heterostructures to n-MOSFETs is discussed, focusing on the enhanced mobility provided by the strain. This paper provides an overview of the theoretically-predicted electronic properties of these heterostructures, as well as their growth. Several practical issues which arise in MOS applications are covered, including the effect of the relaxed-Si1−xGex, buffer layers on diode performance, and the observation of self-heating effects in the output characteristics of the MOS transistors.

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