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Investigation on Self-Heating Effect in Carbon Nanotube Field-Effect Transistors
IEEE Transactions on Electron Devices
◽
10.1109/ted.2010.2090528
◽
2011
◽
Vol 58
(2)
◽
pp. 523-529
◽
Cited By ~ 7
Author(s):
Chuan-Jia Xing
◽
Wen-Yan Yin
◽
Lei-Tao Liu
◽
Jun Huang
Keyword(s):
Carbon Nanotube
◽
Field Effect
◽
Field Effect Transistors
◽
Heating Effect
◽
Self Heating
Download Full-text
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References
The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes
Technical Physics Letters
◽
10.1134/s1063785021060055
◽
2021
◽
Author(s):
A. E. Atamuratov
◽
B. O. Jabbarova
◽
M. M. Khalilloev
◽
A. Yusupov
Keyword(s):
Field Effect
◽
Field Effect Transistors
◽
Silicon On Insulator
◽
The Self
◽
Heating Effect
◽
Self Heating
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β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect
Applied Physics Letters
◽
10.1063/1.5000735
◽
2017
◽
Vol 111
(9)
◽
pp. 092102
◽
Cited By ~ 88
Author(s):
Hong Zhou
◽
Kerry Maize
◽
Gang Qiu
◽
Ali Shakouri
◽
Peide D. Ye
Keyword(s):
Field Effect
◽
Field Effect Transistors
◽
Heating Effect
◽
Self Heating
Download Full-text
Quasi-two-dimension physic-topological model of field-effect transistors (FETs) in view of the self-heating effect
Fifth International Conference on Actual Problems of Electron Devices Engineering
◽
10.1109/apede.2002.1044901
◽
2003
◽
Author(s):
D.B. Sivyakov
◽
D.R. Boldirev
Keyword(s):
Field Effect
◽
Field Effect Transistors
◽
The Self
◽
Topological Model
◽
Heating Effect
◽
Two Dimension
◽
Self Heating
Download Full-text
Concurrent analysis of self-heating effect and thermal stress in partially insulated field effect transistors (PiFETs)
2010 IEEE Electrical Design of Advanced Package & Systems Symposium
◽
10.1109/edaps.2010.5683047
◽
2010
◽
Author(s):
Ming Yi
◽
Wen-Yan Yin
Keyword(s):
Thermal Stress
◽
Field Effect
◽
Field Effect Transistors
◽
Heating Effect
◽
Self Heating
◽
Concurrent Analysis
Download Full-text
(Invited) High Performance β-Ga2O3 Nano-Membrane Field-Effect Transistors on Sapphire Substrate with Reduced Self-Heating Effect
ECS Meeting Abstracts
◽
10.1149/ma2018-01/23/1418
◽
2018
◽
Keyword(s):
Sapphire Substrate
◽
Field Effect
◽
High Performance
◽
Field Effect Transistors
◽
Heating Effect
◽
Self Heating
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Comparative study of self-heating effect on electron mobility in nano-scale strained silicon-on-insulator and strained silicon grown on relaxed SiGe-on-insulator n-metal–oxide–semiconductor field-effect transistors
Semiconductor Science and Technology
◽
10.1088/0268-1242/24/3/035014
◽
2009
◽
Vol 24
(3)
◽
pp. 035014
◽
Cited By ~ 5
Author(s):
Seong-Je Kim
◽
Tae-Hun Shim
◽
Ki-Ryoung Choi
◽
Jea-Gun Park
Keyword(s):
Comparative Study
◽
Electron Mobility
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Silicon On Insulator
◽
Oxide Semiconductor
◽
Strained Silicon
◽
Heating Effect
◽
Self Heating
Download Full-text
Faculty Opinions recommendation of DNA-directed nanofabrication of high-performance carbon nanotube field-effect transistors.
Faculty Opinions – Post-Publication Peer Review of the Biomedical Literature
◽
10.3410/f.738001907.793575807
◽
2020
◽
Author(s):
Bryan Wei
Keyword(s):
Carbon Nanotube
◽
Field Effect
◽
High Performance
◽
Field Effect Transistors
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Differential Amplifier Circuits Based on Carbon Nanotube Field Effect Transistors (CNTFETs)
10.21236/ada517899
◽
2010
◽
Cited By ~ 1
Author(s):
Matthew Chin
◽
Stephen Kilpatrick
Keyword(s):
Carbon Nanotube
◽
Field Effect
◽
Field Effect Transistors
◽
Differential Amplifier
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Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
◽
10.1116/1.2172921
◽
2006
◽
Vol 24
(3)
◽
pp. 624-628
◽
Cited By ~ 40
Author(s):
S. P. McAlister
◽
J. A. Bardwell
◽
S. Haffouz
◽
H. Tang
Keyword(s):
Temperature Dependence
◽
Field Effect
◽
Field Effect Transistors
◽
Self Heating
◽
Dc Characteristics
◽
Heterostructure Field Effect Transistors
◽
Gan Heterostructure
Download Full-text
Enhancement‐Mode Field‐Effect Transistors and High‐Speed Integrated Circuits Based on Aligned Carbon Nanotube Films
Advanced Functional Materials
◽
10.1002/adfm.202104539
◽
2021
◽
pp. 2104539
Author(s):
Yanxia Lin
◽
Shibo Liang
◽
Lin Xu
◽
Lijun Liu
◽
Qianlan Hu
◽
...
Keyword(s):
Carbon Nanotube
◽
Integrated Circuits
◽
Field Effect
◽
High Speed
◽
Field Effect Transistors
◽
Enhancement Mode
◽
Mode Field
◽
Nanotube Films
Download Full-text
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