A thermo-sensitive electrical parameter with maximum dIC/dt during turn-off for high power Trench/Field-Stop IGBT modules

2016 ◽  
Author(s):  
Yuxiang Chen ◽  
Haoze Luo ◽  
Wuhua Li ◽  
Xiangning He ◽  
Jun Ma ◽  
...  
Keyword(s):  
High Power ◽  
Electrical Parameter ◽  
Igbt Modules

Degradation mapping in high power IGBT modules using four-point probing

2015 ◽  
Vol 55 (8) ◽  
pp. 1196-1204 ◽  
Author(s):  
Kristian Bonderup Pedersen ◽  
Lotte Haxen Østergaard ◽  
Pramod Ghimire ◽  
Vladimir Popok ◽  
Kjeld Pedersen
Keyword(s):  
High Power ◽  
Igbt Modules

Reliability Improvement of Aluminum Wirebonds in High‐Power Igbt Modules

1996 ◽  
Vol 445 ◽  
Author(s):  
Yujing Wu ◽  
Gene Thome ◽  
Timothy Scott Savage
Keyword(s):  
Grain Size ◽  
Crack Initiation ◽  
High Power ◽  
Fatigue Testing ◽  
Temperature Cycling ◽  
Grain Structure ◽  
Aluminum Wire ◽  
Significant Deterioration ◽  
Temperature Cycles ◽  
Igbt Modules

AbstractWirebonding is the weakest area of device packaging of power IGBT modules. Accelerated thermal fatigue testing causes cracks to form and propagate in the aluminum wirebond at the foot area. This study examined the relationship of the wirebond reliability and the aluminum wire grain structure, which can be affected by post‐wirebond heat treatment. A series of wirebonded IGBTs were annealed at a temperature range from 280°C to 400°C for up to 60 minutes. Wirebond shear strengths versus temperature cycles were examined. Cross‐sectional SEM was used to examine both aluminum grain size development by annealing and crack initiation and propagation in the wirebonds after temperature cycling. It was found that aluminum grain size was increased by post‐wirebond annealing. With temperature cycling, the wirebond shear strengths of the as‐wirebonded samples decrease rapidly, and lifted wirebonds were present after 1500 temperature cycles. The lifted wirebonds typically break within the aluminum wire near the wire/metallization interface. The shear strength of the wirebonds with post‐wirebond annealing showed no significant change even after 5000 temperature cycles, and there were no signs of significant deterioration of the wirebonds either. The wirebond crack initiation and growth rates were depressed substantially by larger aluminum grains. Annealing of the aluminum wire after wirebonding provided increased aluminum grain size resulting in improved reliability of the wirebonds of high power modules.

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

2019 ◽  
Vol 34 (2) ◽  
pp. 1181-1196 ◽  
Author(s):  
Lei Zhang ◽  
Xibo Yuan ◽  
Xiaojie Wu ◽  
Congcong Shi ◽  
Jiahang Zhang ◽  
...  
Keyword(s):  
Performance Evaluation ◽  
High Power ◽  
Igbt Modules

scholarly journals A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms

Energies ◽  
2019 ◽  
Vol 12 (5) ◽  
pp. 851 ◽  
Author(s):  
Qingyi Kong ◽  
Mingxing Du ◽  
Ziwei Ouyang ◽  
Kexin Wei ◽  
William Hurley
Keyword(s):  
Working Conditions ◽  
Conduction Mechanism ◽  
Electrical Parameter ◽  
Physical Structure ◽  
Model Parameters ◽  
Insulated Gate Bipolar Transistor ◽  
Igbt Modules ◽  
Igbt Module ◽  
Detailed Method ◽  
Simulation Results

The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working conditions. Based on the physical structure and conduction mechanism of the IGBT module, this paper models the on-state voltage and gives a detailed method for extracting the on-state voltage. Experiments not only demonstrate the feasibility of the on-state voltage separation method but also suggest a method for measuring and extracting the model parameters. Furthermore, on-state voltage measurements and simulation results certified the accuracy of this method.

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