TCAD Simulation, Small-Signal and Noise Modeling of Si Based Bandgap Engineered Semiconductor Device for Near THz Applications

2014 ◽  
Author(s):  
Pradeep Kumar ◽  
R.K. Chauhan ◽  
Monika Gupta
Keyword(s):  
Semiconductor Device ◽  
Small Signal ◽  
Noise Modeling ◽  
Tcad Simulation ◽  
Thz Applications

RF Small-Signal and Noise Modeling for SOI Dynamic Threshold Voltage MOSFETs

2008 ◽  
Author(s):  
S. C. Wang ◽  
P. Su ◽  
K. M. Chen ◽  
S. Y. Huang ◽  
C. C. Hung ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Dynamic Threshold ◽  
Small Signal ◽  
Noise Modeling

Impact of pad and gate parasitics on small-signal and noise modeling of 0.35 μm gate length MOS transistors

2002 ◽  
Vol 49 (5) ◽  
pp. 871-880 ◽  
Author(s):  
P. Sakalas ◽  
H.G. Zirath ◽  
A. Litwin ◽  
M. Schroter ◽  
A. Matulionis
Keyword(s):  
Gate Length ◽  
Small Signal ◽  
Mos Transistors ◽  
Noise Modeling

scholarly journals Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 680
Author(s):  
Cristina Medina-Bailon ◽  
Tapas Dutta ◽  
Ali Rezaei ◽  
Daniel Nagy ◽  
Fikru Adamu-Lema ◽  
...  
Keyword(s):  
Charge Transport ◽  
Semiconductor Device ◽  
Electronic Device ◽  
Semiconductor Devices ◽  
Electronic Devices ◽  
Cost Effective ◽  
Simulation Software ◽  
Electronic Simulation ◽  
Tcad Simulation ◽  
Quantum Mechanical Effects

The modeling of nano-electronic devices is a cost-effective approach for optimizing the semiconductor device performance and for guiding the fabrication technology. In this paper, we present the capabilities of the new flexible multi-scale nano TCAD simulation software called Nano-Electronic Simulation Software (NESS). NESS is designed to study the charge transport in contemporary and novel ultra-scaled semiconductor devices. In order to simulate the charge transport in such ultra-scaled devices with complex architectures and design, we have developed numerous simulation modules based on various simulation approaches. Currently, NESS contains a drift-diffusion, Kubo–Greenwood, and non-equilibrium Green’s function (NEGF) modules. All modules are numerical solvers which are implemented in the C++ programming language, and all of them are linked and solved self-consistently with the Poisson equation. Here, we have deployed some of those modules to showcase the capabilities of NESS to simulate advanced nano-scale semiconductor devices. The devices simulated in this paper are chosen to represent the current state-of-the-art and future technologies where quantum mechanical effects play an important role. Our examples include ultra-scaled nanowire transistors, tunnel transistors, resonant tunneling diodes, and negative capacitance transistors. Our results show that NESS is a robust, fast, and reliable simulation platform which can accurately predict and describe the underlying physics in novel ultra-scaled electronic devices.

CMOS Small-Signal and Thermal Noise Modeling at High Frequencies

2013 ◽  
Vol 60 (11) ◽  
pp. 3726-3733 ◽  
Author(s):  
Angelos Antonopoulos ◽  
Matthias Bucher ◽  
Kostas Papathanasiou ◽  
Nikolaos Mavredakis ◽  
Nikolaos Makris ◽  
...  
Keyword(s):  
Thermal Noise ◽  
Small Signal ◽  
High Frequencies ◽  
Noise Modeling
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