Impact of pad and gate parasitics on small-signal and noise modeling of 0.35 μm gate length MOS transistors

2002 ◽  
Vol 49 (5) ◽  
pp. 871-880 ◽  
Author(s):  
P. Sakalas ◽  
H.G. Zirath ◽  
A. Litwin ◽  
M. Schroter ◽  
A. Matulionis
Keyword(s):  
Gate Length ◽  
Small Signal ◽  
Mos Transistors ◽  
Noise Modeling

Small-signal optimization approach to design of microwave signal switch ICs on MOS transistors

2017 ◽  
Vol 46 (5) ◽  
pp. 365-369 ◽  
Author(s):  
V. V. Elesin ◽  
G. N. Nazarova ◽  
N. A. Usachev ◽  
G. V. Chukov
Keyword(s):  
Microwave Signal ◽  
Optimization Approach ◽  
Small Signal ◽  
Mos Transistors ◽  
Signal Optimization ◽  
Signal Switch

scholarly journals Design and Validation of 100 nm GaN-On-Si Ka-Band LNA Based on Custom Noise and Small Signal Models

Electronics ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 150 ◽  
Author(s):  
Lorenzo Pace ◽  
Sergio Colangeli ◽  
Walter Ciccognani ◽  
Patrick Ettore Longhi ◽  
Ernesto Limiti ◽  
...  
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Gate Length ◽  
Small Signal ◽  
Linear Measurements ◽  
Ka Band ◽  
Noise Amplifier ◽  
Gan On Si ◽  
Noise Models

In this paper a GaN-on-Si MMIC Low-Noise Amplifier (LNA) working in the Ka-band is shown. The chosen technology for the design is a 100 nm gate length HEMT provided by OMMIC foundry. Both small-signal and noise models had been previously extracted by the means of an extensive measurement campaign, and were then employed in the design of the presented LNA. The amplifier presents an average noise figure of 2.4 dB, a 30 dB average gain value, and input/output matching higher than 10 dB in the whole 34–37.5 Ghz design band, while non-linear measurements testify a minimum output 1 dB compression point of 23 dBm in the specific 35–36.5 GHz target band. This shows the suitability of the chosen technology for low-noise applications.

The Effect of Channel Recess and Passivation on 4H-SiC MESFETs

2002 ◽  
Vol 742 ◽  
Author(s):  
Ho-Young Cha ◽  
Christopher I. Thomas ◽  
Goutam Koley ◽  
Lester F. Eastman ◽  
Michael G. Spencer
Keyword(s):  
Breakdown Voltage ◽  
Drain Current ◽  
Surface Effects ◽  
Gate Length ◽  
Small Signal ◽  
Saturation Current ◽  
Power Performance ◽  
Dc Characteristics ◽  
Signal Characteristics ◽  
Lower Saturation

ABSTRACTChannel-recessed 4H-SiC MESFETs were fabricated and demonstrated excellent small signal characteristics. A saturated current of 250 − 270 mA/mm at Vgs = 0 V and a maximum transconductance of 40 − 45 mS/mm were measured for channel-recessed devices with a gate length of 0.45 m. The three-terminal breakdown voltages (Vds) range from 120 V to 150 V. The Ft and Fmax of the 2 × 200 m devices were measured to be 14.5 GHz and 40 GHz, respectively. The channel recess technique results in a lower saturation current but higher breakdown voltage which makes it possible for the devices to operate at high voltages. Si3N4 passivation suppresses the instability in DC characteristics and improves CW power performance by reducing the surface effects. Less dispersion in the drain current during a power sweep was observed after passivation.

MOS Transistors on SOI Substrate: On-Wafer Measurement for Small-Signal Parameters Extraction Procedure

1999 ◽  
Author(s):  
A. Bracale ◽  
N. Fel ◽  
V. Ferlet-Cavrois ◽  
D. Pasquet ◽  
J.L. Gautier ◽  
...  
Keyword(s):  
Extraction Procedure ◽  
Small Signal ◽  
Mos Transistors ◽  
Signal Parameters ◽  
Parameters Extraction

RF Small-Signal and Noise Modeling for SOI Dynamic Threshold Voltage MOSFETs

2008 ◽  
Author(s):  
S. C. Wang ◽  
P. Su ◽  
K. M. Chen ◽  
S. Y. Huang ◽  
C. C. Hung ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Dynamic Threshold ◽  
Small Signal ◽  
Noise Modeling
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