Reduction of hole transit time in GaAs MSM photodetectors by p-type /spl delta/-doping

1996 ◽  
Vol 8 (11) ◽  
pp. 1525-1527 ◽  
Author(s):  
Jen-Inn Chyi ◽  
Yi-Jiunn Chien ◽  
Rong-Heng Yuang ◽  
Jia-Lin Shieh ◽  
Jen-Wei Pan ◽  
...  
Keyword(s):  
Transit Time ◽  
Delta Doping ◽  
P Type ◽  
Msm Photodetectors

850-nm VCSELs With p-Type $\mathrm {{\delta }}$ -Doping in the Active Layers for Improved High-Speed and High-Temperature Performance

2016 ◽  
Vol 52 (11) ◽  
pp. 1-7 ◽  
Author(s):  
Kai-Lun Chi ◽  
Dan-Hua Hsieh ◽  
Jia-Liang Yen ◽  
Xin-Nan Chen ◽  
Jason Jyehong Chen ◽  
...  
Keyword(s):  
High Temperature ◽  
High Speed ◽  
Active Layers ◽  
Temperature Performance ◽  
Delta Doping ◽  
P Type

Transit-time reduction in AlGaAs/GaAs HBTs utilizing velocity overshoot in the p-type collector region

1988 ◽  
Vol 9 (11) ◽  
pp. 585-587 ◽  
Author(s):  
K. Morizuka ◽  
R. Katoh ◽  
M. Asaka ◽  
N. Iizuka ◽  
K. Tsuda ◽  
...  
Keyword(s):  
Transit Time ◽  
Velocity Overshoot ◽  
Collector Region ◽  
Time Reduction ◽  
P Type

Transit time reduction in AlGaAs/GaAs HBTs with p-type collector

1988 ◽  
Vol 35 (12) ◽  
pp. 2443-2444 ◽  
Author(s):  
K. Morizuka ◽  
R. Katoh ◽  
M. Asaka ◽  
N. Iizuka ◽  
K. Tsuda ◽  
...  
Keyword(s):  
Transit Time ◽  
Time Reduction ◽  
P Type

scholarly journals Physical Insights on the Dynamic Response of SOI n- and p-Type Junc-tionless Nanowire Transistors

2018 ◽  
Vol 13 (1) ◽  
pp. 1-7
Author(s):  
Rodrigo Trevisoli Doria ◽  
Renan Trevisoli ◽  
Michelly De Souza ◽  
Marcelo Antonio Pavanello
Keyword(s):  
Dynamic Response ◽  
Dynamic Behavior ◽  
Transit Time ◽  
Switching Time ◽  
Series Resistance ◽  
Inversion Mode ◽  
Maximum Oscillation Frequency ◽  
Nanowire Transistors ◽  
P Type ◽  
First Time

This work evaluates, for the first time, the roles of the intrinsic capacitances and the series resistance on the dynamic response of p- and n-type Junctionless Nanowire Transistors. The dynamic behavior evaluation will be carried out through the analysis of the limitation imposed by such parameters on the maximum oscillation frequency (fmax). In the sequence, it will be shown the impacts of fmax and the carriers’ transit time on the minimum switching time presented by JNTs. It has been observed that Junctionless devices present lower fmax than inversion mode transistors of similar dimensions due to higher resistance and lower transconductance. However, the intrinsic capacitances of such devices are smaller than the inversion mode ones, which compensates part of the degradation on fmax caused by the other parameters. Besides that, it is shown that transit time can be important on the dynamic behavior of long devices, but plays a negligible role in shorter ones.

Growth and Characterization of InGaNAs Quaternary Alloys for the Fabrication of Long Wavelength MSM Photodetectors on GaAs Substrates

2005 ◽  
Vol 891 ◽  
Author(s):  
Erle Higgins ◽  
Julian Noad ◽  
Francois Gouin ◽  
David Coulas
Keyword(s):  
Chemical Vapour ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Lattice Matching ◽  
Metal Semiconductor Metal ◽  
Metal Organic ◽  
Response Performance ◽  
P Type ◽  
Msm Photodetectors

ABSTRACTIn this paper, the optical and electrical properties of both as-grown and annealed thick InxGa1−xNyAs1−y layers grown by metal organic chemical vapour deposition (MOCVD) are presented. Through careful control of the trimetylyindium (TMIn), dimetylyhydrazine (DMHy), trimethylgallium (TMGa) and arsine (AsH3) precursors, lattice matching conditions were achieved for epitaxial layers containing up to 3% nitrogen (0≤y≤0.03) and 11% indium (0≤x≤0.11) with bandgap wavelengths to 1.3 μm. Nomarski optical microscopy and double crystal x-ray diffraction (XRD) measurements are used to investigate surface morphology, material quality and lattice-matched conditions. There is little or no 10K photoluminescence from the as-grown layers; alloy activation through rapid thermal annealing must be performed to obtain observable photoluminescence peaks. Annealing is also performed to reduce the resistivity of the as-grown layers. Once annealed, the undoped layers exhibited p-type carrier concentrations of 5.5×1017 cm−3 and mobilities of 50 cm2/Vs. The DC and frequency response performance characteristics of metal-semiconductor-metal (MSM) photodetectors fabricated on both as-grown and annealed InGaNAs layers are examined and compared to similar structures fabricated using GaAs and InGaAs/InP epitaxial materials.

Analysis on the enhanced hole concentration in p-type GaN grown by indium-surfactant-assisted Mg delta doping

2014 ◽  
Vol 252 (5) ◽  
pp. 1109-1115 ◽  
Author(s):  
Yingda Chen ◽  
Hualong Wu ◽  
Guanglong Yue ◽  
Zimin Chen ◽  
Zhiyuan Zheng ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Delta Doping ◽  
P Type ◽  
Surfactant Assisted
Sign in / Sign up

Export Citation Format

Share Document