Analysis on the enhanced hole concentration in p-type GaN grown by indium-surfactant-assisted Mg delta doping

2014 ◽  
Vol 252 (5) ◽  
pp. 1109-1115 ◽  
Author(s):  
Yingda Chen ◽  
Hualong Wu ◽  
Guanglong Yue ◽  
Zimin Chen ◽  
Zhiyuan Zheng ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Delta Doping ◽  
P Type ◽  
Surfactant Assisted

High hole concentration in p-type AlGaN by indium-surfactant-assisted Mg-delta doping

2015 ◽  
Vol 106 (16) ◽  
pp. 162102 ◽  
Author(s):  
Yingda Chen ◽  
Hualong Wu ◽  
Enze Han ◽  
Guanglong Yue ◽  
Zimin Chen ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Delta Doping ◽  
High Hole Concentration ◽  
P Type ◽  
Surfactant Assisted

Enhanced Mg Doping Efficiency in P-Type GaN by Indium-Surfactant-Assisted Delta Doping Method

2013 ◽  
Vol 6 (4) ◽  
pp. 041001 ◽  
Author(s):  
Yingda Chen ◽  
Hualong Wu ◽  
Guanglong Yue ◽  
Zimin Chen ◽  
Zhiyuan Zheng ◽  
...  
Keyword(s):  
Mg Doping ◽  
Delta Doping ◽  
P Type ◽  
Surfactant Assisted

scholarly journals Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure

Materials ◽  
2020 ◽  
Vol 14 (1) ◽  
pp. 144
Author(s):  
Ying Zhao ◽  
Shengrui Xu ◽  
Hongchang Tao ◽  
Yachao Zhang ◽  
Chunfu Zhang ◽  
...  
Keyword(s):  
Semiconductor Device ◽  
Hole Concentration ◽  
Light Output ◽  
Hall Effect Measurement ◽  
High Conductivity ◽  
Light Emitting ◽  
Superlattice Structure ◽  
Delta Doping ◽  
Doping Technique ◽  
P Type

A method of combining the AlGaN/GaN superlattices and Mg delta doping was proposed to achieve a high conductivity p-type GaN layer. The experimental results provided the evidence that the novel doping technique achieves superior p-conductivity. The Hall-effect measurement indicated that the hole concentration was increased by 2.06 times while the sheet resistivity was reduced by 48%. The fabricated green-yellow light-emitting diodes using the achieved high conductivity p-type GaN layer showed an 8- and 10-times enhancement of light output power and external quantum efficiency, respectively. The subsequent numerical calculation was conducted by using an Advanced Physical Model of Semiconductor Device to reveal the mechanism of enhanced device performance. This new doping technique offers an attractive solution to the p-type doping problems in wide-bandgap GaN or AlGaN materials.

An effective and efficient approach to p-type AlN by Be2:O codoping from first-principles calculations

2016 ◽  
Vol 30 (20) ◽  
pp. 1650257
Author(s):  
Meng Zhao ◽  
Wenjun Wang ◽  
Jun Wang ◽  
Junwei Yang ◽  
Weijie Hu ◽  
...  
Keyword(s):  
First Principles ◽  
Ionization Energy ◽  
Hole Concentration ◽  
Valence Band Maximum ◽  
First Principles Calculations ◽  
Mutual Compensation ◽  
Efficient Approach ◽  
P Type ◽  
Codoping Method

Various Be:O-codoped AlN crystals have been investigated via first-principles calculations to evaluate the role of the different combinations in effectively and efficiently inducing p-type carriers. It is found that the O atom is favored to bond with two Be atoms. The formed Be2:O complexes decrease the acceptor ionization energy to 0.11 eV, which is 0.16 eV lower than that of an isolated Be in AlN, implying that the hole concentration could probably be increased by 2–3 orders of magnitude. The electronic structure of Be2:O-codoped AlN shows that the lower ionization energy can be attributed to the interaction between Be and O. The Be–O complexes, despite failing to induce p-type carriers for the mutual compensation of Be and O, introduce new occupied states on the valence-band maximum (VBM) and hence the energy needed for the transition of electrons to the acceptor level is reduced. Thus, the Be2:O codoping method is expected to be an effective and efficient approach to realizing p-type AlN.

High hole concentration of p-type InGaN epitaxial layers grown by MOCVD

2006 ◽  
Vol 498 (1-2) ◽  
pp. 113-117 ◽  
Author(s):  
Po-Chang Chen ◽  
Chin-Hsiang Chen ◽  
Shoou-Jinn Chang ◽  
Yan-Kuin Su ◽  
Ping-Chuan Chang ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Epitaxial Layers ◽  
High Hole Concentration ◽  
P Type

GalnAsSb Materials for Thermophotovoltaics

1996 ◽  
Vol 450 ◽  
Author(s):  
C. A. Wang ◽  
G. W. Turner ◽  
M. J. Manfra ◽  
H. K. Choi ◽  
D. L. Spears
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Organometallic Vapor Phase Epitaxy ◽  
Room Temperature Photoluminescence ◽  
P Type ◽  
First Time ◽  
Lattice Matched ◽  
Comparable Quality ◽  
Peak Emission

ABSTRACTGai1−xInxASySb1-y (0.06 < x < 0.18, 0.05 < y < 0.14) epilayers were grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony. These epilayers have a mirror-like surface morphology, and exhibit room temperature photoluminescence (PL) with peak emission wavelengths (λP,300K) out to 2.4 μm. 4K PL spectra have a full width at half-maximum of 11 meV or less for λP,4K < 2.1 μm (λP,300K = 2.3 μm). Nominally undoped layers are p-type with typical 300K hole concentration of 9 × 1015 cm−3 and mobility ∼ 450 to 580 cm2/V-s for layers grown at 575°C. Doping studies are reported for the first time for GalnAsSb layers doped n type with diethyltellurium and p type with dimethylzinc. Test diodes of p-GalnAsSb/n-GaSb have an ideality factor that ranges from 1.1 to 1.3. A comparison of electrical, optical, and structural properties of epilayers grown by molecular beam epitaxy indicates OMVPE-grown layers are of comparable quality.

scholarly journals Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

Materials ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5339
Author(s):  
Lian Zhang ◽  
Rong Wang ◽  
Zhe Liu ◽  
Zhe Cheng ◽  
Xiaodong Tong ◽  
...  
Keyword(s):  
First Principles ◽  
Metalorganic Chemical Vapor Deposition ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Nitrogen Vacancy ◽  
First Principle ◽  
Mg Doping ◽  
Limiting Condition ◽  
P Type

This work studied the regulation of hole concentration and mobility in p-InGaN layers grown by metalorganic chemical vapor deposition (MOCVD) under an N-rich environment. By adjusting the growth temperature, the hole concentration can be controlled between 6 × 1017/cm3 and 3 × 1019/cm3 with adjustable hole mobility from 3 to 16 cm2/V.s. These p-InGaN layers can meet different requirements of devices for hole concentration and mobility. First-principles defect calculations indicate that the p-type doping of InGaN at the N-rich limiting condition mainly originated from Mg substituting In (MgIn). In contrast with the compensation of nitrogen vacancy in p-type InGaN grown in a Ga-rich environment, the holes in p-type InGaN grown in an N-rich environment were mainly compensated by interstitial Mg (Mgi), which has very low formation energy.

scholarly journals Investigation of spray pyrolyzed cubic structured Cu doped SnS films

2021 ◽  
Author(s):  
Emrah SARICA
Keyword(s):  
Spray Pyrolysis Technique ◽  
Hole Concentration ◽  
Compressive Strain ◽  
Cubic Phase ◽  
Cu Doping ◽  
Glass Substrates ◽  
High Electrical Resistivity ◽  
Hall Effect Measurements ◽  
P Type ◽  
Deposited Films

Abstract In this work undoped and Cu doped SnS film at 4% and 8% were deposited onto glass substrates by spray pyrolysis technique in order to investigate the effect of Cu doping on their physical properties. Surface investigations showed that Cu doping reduced the surface roughness of SnS films from 36.5 nm to 8.8 nm. XRD studies revealed that all films have recently solved large cubic phase of SnS (p-SnS) with a- lattice of 11.53 Å and Cu doping led to reduction in crystallite size from 229 Å to 198 Å. Additionally, all deposited films were found to be under compressive strain. Optical band gaps of SnS:Cu varied in the range of 1.83 eV-1.90 eV. Hall-effect measurements exhibited that all film have p-type conductivity with low hole concentration (~10 11 -10 12 cm -3 ) and high electrical resistivity (~10 4 -10 5 Ωcm).

Concentration-Dependent Photoluminescence and Raman of p-Type GaAs Grown in a Metallic-Arsenic-Based-MOCVD System

2008 ◽  
Vol 587-588 ◽  
pp. 283-287
Author(s):  
J. Díaz-Reyes ◽  
Miguel Galvan-Arellano ◽  
R. Peña-Sierra
Keyword(s):  
Hole Concentration ◽  
Radiative Transitions ◽  
Growth Atmosphere ◽  
Scattering Spectra ◽  
Van Der Pauw ◽  
High Concentrations ◽  
Raman Scattering Spectra ◽  
P Type ◽  
Photoluminescence Response

This work presents the optical and structural characterization of p-type GaAs epilayers. The gallium precursor was the organometallic compound trimethylgallium (TMG). The influence of the doping in the optical and structural properties of the GaAs layers has been studied by photoluminescence (PL) and Raman dispersion measurements. The range of analyzed hole concentration was from 1017 to 1019 cm-3 as measured by the Hall-van der Pauw method. For carrying out doping p-type, it was necessary to modify the hydrogen activity in the growth atmosphere with the control of a H2+N2 mixture, which was used like transporting gas. The photoluminescence response and Raman dispersion of the layers are strongly dependence of the growth temperature, which were investigated based on the hole concentration. The PL response of the layers shows two radiative transitions, band-to-band and band-to-C-acceptor at low hole concentration and disappears at high concentrations. Raman scattering spectra show LO mode at 270 cm-1 for low doped samples and a LO-like mode at 290 cm-1 produced by the phonon-holeplasmon coupling for high doped samples.

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