Transit-time reduction in AlGaAs/GaAs HBTs utilizing velocity overshoot in the p-type collector region

1988 ◽  
Vol 9 (11) ◽  
pp. 585-587 ◽  
Author(s):  
K. Morizuka ◽  
R. Katoh ◽  
M. Asaka ◽  
N. Iizuka ◽  
K. Tsuda ◽  
...  
Keyword(s):  
Transit Time ◽  
Velocity Overshoot ◽  
Collector Region ◽  
Time Reduction ◽  
P Type

Transit time reduction in AlGaAs/GaAs HBTs with p-type collector

1988 ◽  
Vol 35 (12) ◽  
pp. 2443-2444 ◽  
Author(s):  
K. Morizuka ◽  
R. Katoh ◽  
M. Asaka ◽  
N. Iizuka ◽  
K. Tsuda ◽  
...  
Keyword(s):  
Transit Time ◽  
Time Reduction ◽  
P Type

scholarly journals Physical Insights on the Dynamic Response of SOI n- and p-Type Junc-tionless Nanowire Transistors

2018 ◽  
Vol 13 (1) ◽  
pp. 1-7
Author(s):  
Rodrigo Trevisoli Doria ◽  
Renan Trevisoli ◽  
Michelly De Souza ◽  
Marcelo Antonio Pavanello
Keyword(s):  
Dynamic Response ◽  
Dynamic Behavior ◽  
Transit Time ◽  
Switching Time ◽  
Series Resistance ◽  
Inversion Mode ◽  
Maximum Oscillation Frequency ◽  
Nanowire Transistors ◽  
P Type ◽  
First Time

This work evaluates, for the first time, the roles of the intrinsic capacitances and the series resistance on the dynamic response of p- and n-type Junctionless Nanowire Transistors. The dynamic behavior evaluation will be carried out through the analysis of the limitation imposed by such parameters on the maximum oscillation frequency (fmax). In the sequence, it will be shown the impacts of fmax and the carriers’ transit time on the minimum switching time presented by JNTs. It has been observed that Junctionless devices present lower fmax than inversion mode transistors of similar dimensions due to higher resistance and lower transconductance. However, the intrinsic capacitances of such devices are smaller than the inversion mode ones, which compensates part of the degradation on fmax caused by the other parameters. Besides that, it is shown that transit time can be important on the dynamic behavior of long devices, but plays a negligible role in shorter ones.

Reduction of hole transit time in GaAs MSM photodetectors by p-type /spl delta/-doping

1996 ◽  
Vol 8 (11) ◽  
pp. 1525-1527 ◽  
Author(s):  
Jen-Inn Chyi ◽  
Yi-Jiunn Chien ◽  
Rong-Heng Yuang ◽  
Jia-Lin Shieh ◽  
Jen-Wei Pan ◽  
...  
Keyword(s):  
Transit Time ◽  
Delta Doping ◽  
P Type ◽  
Msm Photodetectors

Implications of velocity overshoot in heterojunction transit-time diodes

1983 ◽  
Vol 19 (14) ◽  
pp. 510 ◽  
Author(s):  
P.A. Blakey ◽  
J.R. East ◽  
M.E. Elta ◽  
G.I. Haddad
Keyword(s):  
Transit Time ◽  
Velocity Overshoot

A proposed structure for collector transit-time reduction in AlGaAs/GaAs bipolar transistors

1986 ◽  
Vol 7 (8) ◽  
pp. 483-485 ◽  
Author(s):  
C.M. Maziar ◽  
M.E. Klausmeier-Brown ◽  
M.S. Lundstrom
Keyword(s):  
Transit Time ◽  
Bipolar Transistors ◽  
Time Reduction
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