Transit time reduction in AlGaAs/GaAs HBTs with p-type collector

1988 ◽  
Vol 35 (12) ◽  
pp. 2443-2444 ◽  
Author(s):  
K. Morizuka ◽  
R. Katoh ◽  
M. Asaka ◽  
N. Iizuka ◽  
K. Tsuda ◽  
...  
Keyword(s):  
Transit Time ◽  
Time Reduction ◽  
P Type

Transit-time reduction in AlGaAs/GaAs HBTs utilizing velocity overshoot in the p-type collector region

1988 ◽  
Vol 9 (11) ◽  
pp. 585-587 ◽  
Author(s):  
K. Morizuka ◽  
R. Katoh ◽  
M. Asaka ◽  
N. Iizuka ◽  
K. Tsuda ◽  
...  
Keyword(s):  
Transit Time ◽  
Velocity Overshoot ◽  
Collector Region ◽  
Time Reduction ◽  
P Type

scholarly journals Physical Insights on the Dynamic Response of SOI n- and p-Type Junc-tionless Nanowire Transistors

2018 ◽  
Vol 13 (1) ◽  
pp. 1-7
Author(s):  
Rodrigo Trevisoli Doria ◽  
Renan Trevisoli ◽  
Michelly De Souza ◽  
Marcelo Antonio Pavanello
Keyword(s):  
Dynamic Response ◽  
Dynamic Behavior ◽  
Transit Time ◽  
Switching Time ◽  
Series Resistance ◽  
Inversion Mode ◽  
Maximum Oscillation Frequency ◽  
Nanowire Transistors ◽  
P Type ◽  
First Time

This work evaluates, for the first time, the roles of the intrinsic capacitances and the series resistance on the dynamic response of p- and n-type Junctionless Nanowire Transistors. The dynamic behavior evaluation will be carried out through the analysis of the limitation imposed by such parameters on the maximum oscillation frequency (fmax). In the sequence, it will be shown the impacts of fmax and the carriers’ transit time on the minimum switching time presented by JNTs. It has been observed that Junctionless devices present lower fmax than inversion mode transistors of similar dimensions due to higher resistance and lower transconductance. However, the intrinsic capacitances of such devices are smaller than the inversion mode ones, which compensates part of the degradation on fmax caused by the other parameters. Besides that, it is shown that transit time can be important on the dynamic behavior of long devices, but plays a negligible role in shorter ones.

Reduction of hole transit time in GaAs MSM photodetectors by p-type /spl delta/-doping

1996 ◽  
Vol 8 (11) ◽  
pp. 1525-1527 ◽  
Author(s):  
Jen-Inn Chyi ◽  
Yi-Jiunn Chien ◽  
Rong-Heng Yuang ◽  
Jia-Lin Shieh ◽  
Jen-Wei Pan ◽  
...  
Keyword(s):  
Transit Time ◽  
Delta Doping ◽  
P Type ◽  
Msm Photodetectors

A proposed structure for collector transit-time reduction in AlGaAs/GaAs bipolar transistors

1986 ◽  
Vol 7 (8) ◽  
pp. 483-485 ◽  
Author(s):  
C.M. Maziar ◽  
M.E. Klausmeier-Brown ◽  
M.S. Lundstrom
Keyword(s):  
Transit Time ◽  
Bipolar Transistors ◽  
Time Reduction

Interface morphology of thermal oxide grown on polycrystalline silicon by different processes

1992 ◽  
Vol 50 (2) ◽  
pp. 1396-1397
Author(s):  
H. Yen ◽  
E. P. Kvam ◽  
R. Bashir ◽  
S. Venkatesan ◽  
G. W. Neudeck
Keyword(s):  
Integrated Circuits ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Interface Morphology ◽  
Oxide Interface ◽  
Poly Silicon ◽  
Thermal Oxide ◽  
Grain Orientations ◽  
Polycrystalline Silicon Films ◽  
P Type

Polycrystalline silicon, when highly doped, is commonly used in microelectronics applications such as gates and interconnects. The packing density of integrated circuits can be enhanced by fabricating multilevel polycrystalline silicon films separated by insulating SiO2 layers. It has been found that device performance and electrical properties are strongly affected by the interface morphology between polycrystalline silicon and SiO2. As a thermal oxide layer is grown, the poly silicon is consumed, and there is a volume expansion of the oxide relative to the atomic silicon. Roughness at the poly silicon/thermal oxide interface can be severely deleterious due to stresses induced by the volume change during oxidation. Further, grain orientations and grain boundaries may alter oxidation kinetics, which will also affect roughness, and thus stress.Three groups of polycrystalline silicon films were deposited by LPCVD after growing thermal oxide on p-type wafers. The films were doped with phosphorus or arsenic by three different methods.

Determination of arsenic atom distribution arsenic doped silicon using HOLZ-line analysis

1996 ◽  
Vol 54 ◽  
pp. 976-977
Author(s):  
Y. Kikuchi ◽  
N. Hashikawa ◽  
F. Uesugi ◽  
E. Wakai ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Zone Axis ◽  
Experimental Result ◽  
Background Intensity ◽  
Crystal Thickness ◽  
Arsenic Atom ◽  
Doped Silicon ◽  
P Type ◽  
Line Analysis

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.

Investigating the functional link between TMEM165 and SPCA1

2019 ◽  
Vol 476 (21) ◽  
pp. 3281-3293 ◽  
Author(s):  
Elodie Lebredonchel ◽  
Marine Houdou ◽  
Hans-Heinrich Hoffmann ◽  
Kateryna Kondratska ◽  
Marie-Ange Krzewinski ◽  
...  
Keyword(s):  
Subcellular Localization ◽  
Complete Loss ◽  
Protein Family ◽  
Uncharacterized Protein ◽  
Functional Link ◽  
P Type

TMEM165 was highlighted in 2012 as the first member of the Uncharacterized Protein Family 0016 (UPF0016) related to human glycosylation diseases. Defects in TMEM165 are associated with strong Golgi glycosylation abnormalities. Our previous work has shown that TMEM165 rapidly degrades with supraphysiological manganese supplementation. In this paper, we establish a functional link between TMEM165 and SPCA1, the Golgi Ca2+/Mn2+ P-type ATPase pump. A nearly complete loss of TMEM165 was observed in SPCA1-deficient Hap1 cells. We demonstrate that TMEM165 was constitutively degraded in lysosomes in the absence of SPCA1. Complementation studies showed that TMEM165 abundance was directly dependent on SPCA1's function and more specifically its capacity to pump Mn2+ from the cytosol into the Golgi lumen. Among SPCA1 mutants that differentially impair Mn2+ and Ca2+ transport, only the Q747A mutant that favors Mn2+ pumping rescues the abundance and Golgi subcellular localization of TMEM165. Interestingly, the overexpression of SERCA2b also rescues the expression of TMEM165. Finally, this paper highlights that TMEM165 expression is linked to the function of SPCA1.

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