InGaAs-GaAs quantum-well lasers with monolithically integrated intracavity electroabsorption modulators by selective-area MOCVD

1996 ◽  
Vol 8 (1) ◽  
pp. 78-80 ◽  
Author(s):  
R.M. Lammert ◽  
D.V. Forbes ◽  
G.M. Smith ◽  
M.L. Osowski ◽  
J.J. Coleman
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Electroabsorption Modulators ◽  
Monolithically Integrated ◽  
Selective Area

Single and double quantum well lasers with a monolithically integrated passive section

1990 ◽  
Vol 57 (8) ◽  
pp. 810-812 ◽  
Author(s):  
J. Werner ◽  
T. P. Lee ◽  
E. Kapon ◽  
E. Colas ◽  
N. G. Stoffel ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Double Quantum ◽  
Monolithically Integrated ◽  
Double Quantum Well

Monolithic strained‐InGaAsP multiple‐quantum‐well lasers with integrated electroabsorption modulators for active mode locking

1994 ◽  
Vol 65 (1) ◽  
pp. 1-3 ◽  
Author(s):  
Kenji Sato ◽  
Koichi Wakita ◽  
Isamu Kotaka ◽  
Yasuhiro Kondo ◽  
Mitsuo Yamamoto ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Mode Locking ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Electroabsorption Modulators ◽  
Active Mode

Wavelength tuning in strained layer InGaAs-GaAs-AlGaAs quantum well lasers by selective-area MOCVD

1994 ◽  
Vol 23 (2) ◽  
pp. 115-119 ◽  
Author(s):  
T. M. Cockerill ◽  
D. V. Forbes ◽  
H. Han ◽  
B. A. Turkot ◽  
J. A. Dantzig ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Wavelength Tuning ◽  
Strained Layer ◽  
Selective Area
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