High-responsivity InGaAs MSM photodetectors with semi-transparent Schottky contacts

1995 ◽  
Vol 7 (11) ◽  
pp. 1333-1335 ◽  
Author(s):  
Rong-Hen Yuang ◽  
Jen-Inn Chyi ◽  
Yi-Jen Chan ◽  
Wei Lin ◽  
Yuan-Kuang Tu
Keyword(s):  
Schottky Contacts ◽  
High Responsivity ◽  
Msm Photodetectors

Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity

Nanoscale ◽  
2014 ◽  
Vol 6 (19) ◽  
pp. 11232-11239 ◽  
Author(s):  
K. Das ◽  
S. Mukherjee ◽  
S. Manna ◽  
S. K. Ray ◽  
A. K. Raychaudhuri
Keyword(s):  
Near Infrared ◽  
Silicon Nanowire ◽  
Exciting Light ◽  
Infrared Photodetector ◽  
Zero Bias ◽  
Nanowire Diameter ◽  
Si Nanowire ◽  
High Responsivity ◽  
Infra Red ◽  
Msm Photodetectors

Single silicon nanowire-based MSM photodetectors show ultra high responsivity (>104 A W−1) in the near-infra-red region, even at zero bias. The observed photoresponse is sensitive to the polarization of the exciting light, allowing the device to act as a polarization-dependent photodetector.

High-performance MSM photodetectors using Cu Schottky contacts

1997 ◽  
Vol 9 (5) ◽  
pp. 657-659 ◽  
Author(s):  
A.C. Davidson ◽  
F.W. Wise ◽  
R.C. Compton ◽  
D.T. Emerson ◽  
J.R. Shealy ◽  
...  
Keyword(s):  
High Performance ◽  
Schottky Contacts ◽  
Msm Photodetectors

InGaAsN MSM photodetectors using RF-Sputtered ITO layers as transparent Schottky contacts

2007 ◽  
Author(s):  
W. C. Chen ◽  
Y. K. Su ◽  
R. W. Chuang ◽  
H. C. Yu ◽  
B. Y. Chen
Keyword(s):  
Schottky Contacts ◽  
Msm Photodetectors

Broad-bandwidth, high-responsivity intermediate growth temperature GaAs MSM photodetectors

1995 ◽  
Vol 7 (12) ◽  
pp. 1483-1485 ◽  
Author(s):  
B.C. Tousley ◽  
N. Davids ◽  
A.H. Sayles ◽  
A. Paolella ◽  
P. Cooke ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Broad Bandwidth ◽  
Intermediate Growth ◽  
High Responsivity ◽  
Msm Photodetectors

Metal-Semiconductor-Metal (MSM) Photodetectors Based on Single-walled Carbon Nanotube Film-GaAs Schottky Contacts

2007 ◽  
Vol 1057 ◽  
Author(s):  
Jason L. Johnson ◽  
Ashkan Behnam ◽  
Yongho Choi ◽  
Leila Noriega ◽  
Gunhan Ertosun ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Dark Current ◽  
Thermionic Emission ◽  
Schottky Contacts ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Carbon Nanotube Film ◽  
Metal Semiconductor Metal ◽  
Control Devices ◽  
Msm Photodetectors

ABSTRACTWe experimentally study the dark and photocurrent in metal-semiconductor-metal (MSM) photodetectors based on single-walled carbon nanotube film Schottky contacts on GaAs. We find that above ∼260°K, thermionic emission of electrons with a barrier height of ∼0.54 eV is the dominant dark current transport mechanism. Furthermore, MSM devices with CNT film electrodes exhibit a higher photocurrent-to-dark current ratio while maintaining a comparable responsivity relative to control devices. This work demonstrates that nanotube films can be integrated as Schottky electrodes in conventional semiconductor optoelectronic devices.

Investigation of InGaAsN MSM photodetectors with transparent ITO Schottky contacts

2008 ◽  
Vol 23 (3) ◽  
pp. 035027 ◽  
Author(s):  
W C Chen ◽  
Y K Su ◽  
R W Chuang ◽  
H C Yu ◽  
B Y Chen ◽  
...  
Keyword(s):  
Schottky Contacts ◽  
Msm Photodetectors

Polymeric Strip Waveguides and their Connection to Very Thin Ultrafast Metal-Semiconductor-Metal Detectors

1999 ◽  
Vol 597 ◽  
Author(s):  
Ch. Buchal ◽  
A. Roelofs ◽  
M. Siegert ◽  
M. Löken
Keyword(s):  
Optical Fibers ◽  
Optical Waveguides ◽  
Ion Beam ◽  
Beam Propagation Method ◽  
Computer Code ◽  
Schottky Contacts ◽  
Ion Beam Etching ◽  
Metal Semiconductor Metal ◽  
Metal Detectors ◽  
Msm Photodetectors

AbstractWe present data on the fabrication process of optical waveguides from four different polymers, which have been patterned either by standard lithographical masking and reactive ion beam etching (RIE) or by direct lithographical exposure of photosensitive material. Three of the resists were directly photosensitive, they could be exposed and developed. Thereafter they can be cured and remain stable. Waveguide losses of 3.5 dB/cm had to be accepted for the photosensitive materials, while the non-sensitive polymers formed very good guides (0.8 dB/cm), but were more difficult to process. We demonstrate the coupling of the strip waveguides to optical fibers on one side and to very thin metal-semiconductor-metal (MSM) photodetectors at the other side. A beam propagation method computer code has been used to evaluate the best coupling efficiencies between the guides and the detectors, which are ultrafast (3.5 ps FWHM) due to their very thin silicon slab design (Si thickness 400 nm, sandwiched between two Schottky contacts).

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