InGaAsN MSM photodetectors using RF-Sputtered ITO layers as transparent Schottky contacts

2007 ◽  
Author(s):  
W. C. Chen ◽  
Y. K. Su ◽  
R. W. Chuang ◽  
H. C. Yu ◽  
B. Y. Chen
Keyword(s):  
Schottky Contacts ◽  
Msm Photodetectors

High-performance MSM photodetectors using Cu Schottky contacts

1997 ◽  
Vol 9 (5) ◽  
pp. 657-659 ◽  
Author(s):  
A.C. Davidson ◽  
F.W. Wise ◽  
R.C. Compton ◽  
D.T. Emerson ◽  
J.R. Shealy ◽  
...  
Keyword(s):  
High Performance ◽  
Schottky Contacts ◽  
Msm Photodetectors

Metal-Semiconductor-Metal (MSM) Photodetectors Based on Single-walled Carbon Nanotube Film-GaAs Schottky Contacts

2007 ◽  
Vol 1057 ◽  
Author(s):  
Jason L. Johnson ◽  
Ashkan Behnam ◽  
Yongho Choi ◽  
Leila Noriega ◽  
Gunhan Ertosun ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Dark Current ◽  
Thermionic Emission ◽  
Schottky Contacts ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Carbon Nanotube Film ◽  
Metal Semiconductor Metal ◽  
Control Devices ◽  
Msm Photodetectors

ABSTRACTWe experimentally study the dark and photocurrent in metal-semiconductor-metal (MSM) photodetectors based on single-walled carbon nanotube film Schottky contacts on GaAs. We find that above ∼260°K, thermionic emission of electrons with a barrier height of ∼0.54 eV is the dominant dark current transport mechanism. Furthermore, MSM devices with CNT film electrodes exhibit a higher photocurrent-to-dark current ratio while maintaining a comparable responsivity relative to control devices. This work demonstrates that nanotube films can be integrated as Schottky electrodes in conventional semiconductor optoelectronic devices.

High-responsivity InGaAs MSM photodetectors with semi-transparent Schottky contacts

1995 ◽  
Vol 7 (11) ◽  
pp. 1333-1335 ◽  
Author(s):  
Rong-Hen Yuang ◽  
Jen-Inn Chyi ◽  
Yi-Jen Chan ◽  
Wei Lin ◽  
Yuan-Kuang Tu
Keyword(s):  
Schottky Contacts ◽  
High Responsivity ◽  
Msm Photodetectors

Investigation of InGaAsN MSM photodetectors with transparent ITO Schottky contacts

2008 ◽  
Vol 23 (3) ◽  
pp. 035027 ◽  
Author(s):  
W C Chen ◽  
Y K Su ◽  
R W Chuang ◽  
H C Yu ◽  
B Y Chen ◽  
...  
Keyword(s):  
Schottky Contacts ◽  
Msm Photodetectors

Polymeric Strip Waveguides and their Connection to Very Thin Ultrafast Metal-Semiconductor-Metal Detectors

1999 ◽  
Vol 597 ◽  
Author(s):  
Ch. Buchal ◽  
A. Roelofs ◽  
M. Siegert ◽  
M. Löken
Keyword(s):  
Optical Fibers ◽  
Optical Waveguides ◽  
Ion Beam ◽  
Beam Propagation Method ◽  
Computer Code ◽  
Schottky Contacts ◽  
Ion Beam Etching ◽  
Metal Semiconductor Metal ◽  
Metal Detectors ◽  
Msm Photodetectors

AbstractWe present data on the fabrication process of optical waveguides from four different polymers, which have been patterned either by standard lithographical masking and reactive ion beam etching (RIE) or by direct lithographical exposure of photosensitive material. Three of the resists were directly photosensitive, they could be exposed and developed. Thereafter they can be cured and remain stable. Waveguide losses of 3.5 dB/cm had to be accepted for the photosensitive materials, while the non-sensitive polymers formed very good guides (0.8 dB/cm), but were more difficult to process. We demonstrate the coupling of the strip waveguides to optical fibers on one side and to very thin metal-semiconductor-metal (MSM) photodetectors at the other side. A beam propagation method computer code has been used to evaluate the best coupling efficiencies between the guides and the detectors, which are ultrafast (3.5 ps FWHM) due to their very thin silicon slab design (Si thickness 400 nm, sandwiched between two Schottky contacts).

An atomic-resolution microscope study of Al contracts on GaAs

1986 ◽  
Vol 44 ◽  
pp. 726-727
Author(s):  
Z. Liliental-Weber ◽  
C. Nelson ◽  
R. Ludeke ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
High Speed ◽  
Schottky Contacts ◽  
Detailed Knowledge ◽  
The Past ◽  
Semiconductor Interfaces ◽  
Deposited Metal ◽  
Microwave Applications ◽  
Free Interfaces ◽  
Potential Use

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

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