An efficient method for determining threshold voltage, series resistance and effective geometry of MOS transistors

1996 ◽  
Vol 9 (2) ◽  
pp. 215-222 ◽  
Author(s):  
P.R. Karlsson ◽  
K.O. Jeppson
Keyword(s):  
Efficient Method ◽  
Threshold Voltage ◽  
Series Resistance ◽  
Mos Transistors

scholarly journals Starter for Voltage Boost Converter to Harvest Thermoelectric Energy for Body-Worn Sensors

Energies ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4092
Author(s):  
Grzegorz Blakiewicz ◽  
Jacek Jakusz ◽  
Waldemar Jendernalik
Keyword(s):  
Threshold Voltage ◽  
Low Voltage ◽  
Boost Converter ◽  
Mos Transistors ◽  
Weak Inversion ◽  
Thermoelectric Energy ◽  
On Chip ◽  
Voltage Swing ◽  
High Output Voltage ◽  
High Output

This paper examines the suitability of selected configurations of ultra-low voltage (ULV) oscillators as starters for a voltage boost converter to harvest energy from a thermoelectric generator (TEG). Important properties of particularly promising configurations, suitable for on-chip implementation are compared. On this basis, an improved oscillator with a low startup voltage and a high output voltage swing is proposed. The applicability of n-channel native MOS transistors with negative or near-zero threshold voltage in ULV oscillators is analyzed. The results demonstrate that a near-zero threshold voltage transistor operating in the weak inversion region is most advantageous for the considered application. The obtained results were used as a reference for design of a boost converter starter intended for integration in 180-nm CMOS X-FAB technology. In the selected technology, the most suitable transistor available with a negative threshold voltage was used. Despite using a transistor with a negative threshold voltage, a low startup voltage of 29 mV, a power consumption of 70 µW, and power conversion efficiency of about 1.5% were achieved. A great advantage of the proposed starter is that it eliminates a multistage charge pump necessary to obtain a voltage of sufficient value to supply the boost converter control circuit.

Threshold voltage variations with temperature in MOS transistors

1971 ◽  
Vol 18 (6) ◽  
pp. 386-388 ◽  
Author(s):  
R. Wang ◽  
J. Dunkley ◽  
T.A. DeMassa ◽  
L.F. Jelsma
Keyword(s):  
Threshold Voltage ◽  
Mos Transistors

Threshold voltage controllability in double-diffused-MOS transistors

1974 ◽  
Vol 21 (12) ◽  
pp. 778-784 ◽  
Author(s):  
M.D. Pocha ◽  
A.G. Gonzalez ◽  
R.W. Dutton
Keyword(s):  
Threshold Voltage ◽  
Mos Transistors

scholarly journals Series resistance effects in submicron MOS transistors operated from 300 K down to 4.2 K

1994 ◽  
Vol 04 (C6) ◽  
pp. C6-31-C6-36
Author(s):  
E. A. Gutiérrez-D ◽  
L. Deferm ◽  
G. Declerck
Keyword(s):  
Series Resistance ◽  
Mos Transistors
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