The drain threshold voltage VTd in submicrometer MOS transistors at 4.2 K

1995 ◽  
Vol 16 (3) ◽  
pp. 85-87 ◽  
Author(s):  
A. Edmundo ◽  
D. Gutierrez
Keyword(s):  
Threshold Voltage ◽  
Mos Transistors

scholarly journals Starter for Voltage Boost Converter to Harvest Thermoelectric Energy for Body-Worn Sensors

Energies ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4092
Author(s):  
Grzegorz Blakiewicz ◽  
Jacek Jakusz ◽  
Waldemar Jendernalik
Keyword(s):  
Threshold Voltage ◽  
Low Voltage ◽  
Boost Converter ◽  
Mos Transistors ◽  
Weak Inversion ◽  
Thermoelectric Energy ◽  
On Chip ◽  
Voltage Swing ◽  
High Output Voltage ◽  
High Output

This paper examines the suitability of selected configurations of ultra-low voltage (ULV) oscillators as starters for a voltage boost converter to harvest energy from a thermoelectric generator (TEG). Important properties of particularly promising configurations, suitable for on-chip implementation are compared. On this basis, an improved oscillator with a low startup voltage and a high output voltage swing is proposed. The applicability of n-channel native MOS transistors with negative or near-zero threshold voltage in ULV oscillators is analyzed. The results demonstrate that a near-zero threshold voltage transistor operating in the weak inversion region is most advantageous for the considered application. The obtained results were used as a reference for design of a boost converter starter intended for integration in 180-nm CMOS X-FAB technology. In the selected technology, the most suitable transistor available with a negative threshold voltage was used. Despite using a transistor with a negative threshold voltage, a low startup voltage of 29 mV, a power consumption of 70 µW, and power conversion efficiency of about 1.5% were achieved. A great advantage of the proposed starter is that it eliminates a multistage charge pump necessary to obtain a voltage of sufficient value to supply the boost converter control circuit.

Threshold voltage variations with temperature in MOS transistors

1971 ◽  
Vol 18 (6) ◽  
pp. 386-388 ◽  
Author(s):  
R. Wang ◽  
J. Dunkley ◽  
T.A. DeMassa ◽  
L.F. Jelsma
Keyword(s):  
Threshold Voltage ◽  
Mos Transistors

Threshold voltage controllability in double-diffused-MOS transistors

1974 ◽  
Vol 21 (12) ◽  
pp. 778-784 ◽  
Author(s):  
M.D. Pocha ◽  
A.G. Gonzalez ◽  
R.W. Dutton
Keyword(s):  
Threshold Voltage ◽  
Mos Transistors

A Model of Gamma-Ray Irradiation Effects in Silicon Dioxide Films and on Silicon Dioxide - Silicon Interface

2007 ◽  
Vol 555 ◽  
pp. 147-152 ◽  
Author(s):  
M. Odalović ◽  
D. Petković
Keyword(s):  
Silicon Dioxide ◽  
Threshold Voltage ◽  
Gamma Ray ◽  
Monte Carlo Model ◽  
Mos Transistors ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Silicon Dioxide Films ◽  
Gamma Ray Irradiation ◽  
Silicon Interface

The gamma-ray irradiation causes positive charge traps formation in silicon dioxide films and at silicon dioxide - silicon interface of MOS devices, and the threshold voltage shift in MOS transistors. Here, the Monte Carlo model was used to develop an approach for estimating gammaray induced traps spatially distributed in silicon dioxide films. This is combined with the model of energy distributed traps at silicon dioxide - silicon interface. The developed model enables gammaray induced charge and threshold voltage shift determination as a function of gamma-ray doses. The threshold voltage measurements at a single specified current, both of radiation sensitive and radiation hardened MOS transistors irradiated with different doses of gamma-ray are compared with the developed model and good agreement are obtained.

Temperature dependences of threshold voltage and drain-induced barrier lowering in 60nm gate length MOS transistors

2014 ◽  
Vol 54 (6-7) ◽  
pp. 1109-1114 ◽  
Author(s):  
Zehua Chen ◽  
Hei Wong ◽  
Yan Han ◽  
Shurong Dong ◽  
B.L. Yang
Keyword(s):  
Threshold Voltage ◽  
Gate Length ◽  
Mos Transistors ◽  
Temperature Dependences
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