Poly(3-hexylthiophene) field-effect transistors with high dielectric constant gate insulator

2004 ◽  
Vol 95 (1) ◽  
pp. 316-322 ◽  
Author(s):  
Guangming Wang ◽  
Daniel Moses ◽  
Alan J. Heeger ◽  
Hong-Mei Zhang ◽  
Mux Narasimhan ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Field Effect ◽  
High Dielectric Constant ◽  
Field Effect Transistors ◽  
Gate Insulator ◽  
High Dielectric

Diamond field effect transistors with a high-dielectric constant Ta2O5as gate material

2014 ◽  
Vol 47 (24) ◽  
pp. 245102 ◽  
Author(s):  
J-W Liu ◽  
M-Y Liao ◽  
M Imura ◽  
E Watanabe ◽  
H Oosato ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Field Effect ◽  
High Dielectric Constant ◽  
Field Effect Transistors ◽  
High Dielectric

High-dielectric-constant hafnium silicate insulator for low-voltage pentacene field-effect transistors

2008 ◽  
Vol 205 (12) ◽  
pp. 2970-2974 ◽  
Author(s):  
Hu Yan ◽  
Tsubasa Kagata ◽  
Susumu Arima ◽  
Hiroshi Sato ◽  
Hidenori Okuzaki
Keyword(s):  
Dielectric Constant ◽  
Field Effect ◽  
High Dielectric Constant ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Hafnium Silicate ◽  
High Dielectric

EFFECT OF GATE INSULATOR ON THE PERFORMANCE OF COPPER PHTHALOCYANINE-BASED ORGANIC THIN FILM TRANSISTORS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 745-748
Author(s):  
N. PADMA ◽  
SHASWATI SEN ◽  
A. K. CHAUHAN ◽  
D. K. ASWAL ◽  
S. K. GUPTA ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Field Effect ◽  
Gate Dielectric ◽  
Copper Phthalocyanine ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Dielectric Constants ◽  
Gate Insulator ◽  
Operating Voltage ◽  
Organic Thin Film

Effect of the gate dielectric on the performance of Copper phthalocyanine (CuPc) based top contact organic field effect transistors (OFET) has been studied using thermally grown SiO2 and sputtered HfO x films with dielectric constants of 3.9 and 12.5 respectively. Operating voltages of the devices on SiO2 and HfO x were found to be 10–50 V and 2–3 V, respectively. The lower operating voltage for HfO x is attributed to the higher dielectric constant. Devices on SiO2 and HfO x were found to have field effect mobilities of 0.01 and 3.5 × 10-3 cm2/Vs and drain current modulation of 103 and 102, respectively. Scanning Electron Microscopy showed widely scattered nanowires on HfO x and densely packed nanofibers on SiO2 . X-ray diffraction studies showed better crystallinity of films on SiO2 . The results show that operating voltage of devices can be reduced by using higher dielectric constant material while mobility and FET characteristics depend on structure of CuPc that in turn is influenced by the dielectric.

Rubrene Single-crystal Organic Field Effect Transistor with Laser Ablated BaTiO3 Epitaxial Growth Thin-film as High-k Insulator

2006 ◽  
Vol 965 ◽  
Author(s):  
Nobuya Hiroshiba ◽  
Ryotaro Kumashiro ◽  
Taishi Takenobu ◽  
Naoya Komatsu ◽  
Yusuke Suto ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Dielectric Constant ◽  
Gate Insulator ◽  
High K ◽  
High Carrier ◽  
Effect Transistor ◽  
High Dielectric

ABSTRACTHigh quality BaTiO3 thin film epitaxially grown on a Nb-doped SrTiO3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high-k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTiO3 thin film accumulates 0.1 holes/rubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holes/rubrene-molecule attained in the case of SiO2 gate insulator. Important parameters of rubrene single crystal FETs on BTO/Nb- STO are also described in comparison with those on SiO2/doped-Si.

scholarly journals Low-operating-voltage pentacene field-effect transistor with a high-dielectric-constant polymeric gate dielectric

2006 ◽  
Vol 89 (18) ◽  
pp. 183516 ◽  
Author(s):  
Se Hyun Kim ◽  
Sang Yoon Yang ◽  
Kwonwoo Shin ◽  
Hayoung Jeon ◽  
Jong Won Lee ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Dielectric Constant ◽  
Gate Dielectric ◽  
Operating Voltage ◽  
Effect Transistor ◽  
High Dielectric
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