scholarly journals High-sensitivity telecommunication-compatible photoconductive terahertz detection through carrier transit time reduction

2020 ◽  
Vol 28 (18) ◽  
pp. 26324
Author(s):  
Ping-Keng Lu ◽  
Deniz Turan ◽  
Mona Jarrahi
Keyword(s):  
Transit Time ◽  
High Sensitivity ◽  
Terahertz Detection ◽  
Time Reduction

Transit-time reduction in AlGaAs/GaAs HBTs utilizing velocity overshoot in the p-type collector region

1988 ◽  
Vol 9 (11) ◽  
pp. 585-587 ◽  
Author(s):  
K. Morizuka ◽  
R. Katoh ◽  
M. Asaka ◽  
N. Iizuka ◽  
K. Tsuda ◽  
...  
Keyword(s):  
Transit Time ◽  
Velocity Overshoot ◽  
Collector Region ◽  
Time Reduction ◽  
P Type

Transit time reduction in AlGaAs/GaAs HBTs with p-type collector

1988 ◽  
Vol 35 (12) ◽  
pp. 2443-2444 ◽  
Author(s):  
K. Morizuka ◽  
R. Katoh ◽  
M. Asaka ◽  
N. Iizuka ◽  
K. Tsuda ◽  
...  
Keyword(s):  
Transit Time ◽  
Time Reduction ◽  
P Type

High Sensitivity Terahertz Detection Module

2018 ◽  
Author(s):  
K. Zhang ◽  
S.C. Shi ◽  
Q.J. Yao ◽  
J. Li ◽  
W. Zhang ◽  
...  
Keyword(s):  
High Sensitivity ◽  
Terahertz Detection

High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors

2016 ◽  
Vol 25 (03n04) ◽  
pp. 1640011 ◽  
Author(s):  
D. Coquillat ◽  
V. Nodjiadjim ◽  
S. Blin ◽  
A. Konczykowska ◽  
N. Dyakonova ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Room Temperature ◽  
High Sensitivity ◽  
Low Noise ◽  
Bipolar Transistors ◽  
Low Noise Amplifiers ◽  
Modulation Bandwidth ◽  
Terahertz Detection ◽  
Double Heterojunction

Compact and fast detectors, for imaging and wireless communication applications, require efficient rectification of electromagnetic radiation with frequencies approaching 1 THz and modulation bandwidth up to a few tens of GHz. This can be obtained only by using a mature technology allowing monolithic integration of detectors with low-noise amplifiers. One of the best candidates is indium phosphide bipolar transistor (InP HBT) technology. In this work, we report on room temperature high sensitivity terahertz detection by InP double-heterojunction bipolar transistors (DHBTs) operating in a large frequency range (0.25–3.1 THz). The performances of the DHBTs as terahertz sensors for communications were evaluated showing the modulation bandwidth of investigated DHBTs close to 10 GHz.

Ultrafast Plasmonic Photoconductors for High Sensitivity Terahertz Detection

CLEO: 2013 ◽  
2013 ◽  
Author(s):  
Ning Wang ◽  
Christopher W. Berry ◽  
Mohammad Reza Hashemi ◽  
Mona Jarrahi
Keyword(s):  
High Sensitivity ◽  
Terahertz Detection
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