High-frequency characterization of sub-0.25-/spl mu/m fully depleted silicon-on-insulator MOSFETs

2000 ◽  
Vol 21 (10) ◽  
pp. 497-499 ◽  
Author(s):  
C.L. Chen ◽  
R.H. Mathews ◽  
J.A. Burns ◽  
P.W. Wyatt ◽  
D.-R. Yost ◽  
...  
Keyword(s):  
High Frequency ◽  
Silicon On Insulator ◽  
Fully Depleted

SOI CMOS TRANSISTORS FOR RF AND MICROWAVE APPLICATIONS

2001 ◽  
Vol 11 (04) ◽  
pp. 1159-1248 ◽  
Author(s):  
D. FLANDRE ◽  
J.-P. RASKIN ◽  
D. VANHOENACKER-JANVIER
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Transmission Lines ◽  
High Frequency ◽  
Silicon On Insulator ◽  
Low Power Consumption ◽  
New Model ◽  
Microwave Applications ◽  
High Degree

The new communication markets are vey demanding: high frequency, high degree of integration, low power consumption. Silicon-on-Insulator offers many advantages and this paper illustrates the potentialities of this technology for RF and microwave applictions. After an overview of the SOI material, the properties of the SOI MOSFET's are analyzed and compared to bulk Si MOSFET's. The models of transmission lines and inductors on SOI are compared and further used in the on-wafer characterization of the transistors. Various models for the transistors are presented and their limitations are given. A new model is described, valid from DC to the microwave region. This model agrees very well with the measurements for various transistor dimensions. Finally, variuos RF and microware circuits are presented. Ths paper does not fully describe all the properties and applications of SOI but the numerous references offered to the reader help him to gather more informations.

Ultrathin Low Energy Simox for Low Cost, High Density Applications

1993 ◽  
Vol 316 ◽  
Author(s):  
Fereydoon Namavar ◽  
N.M. Kalkhoran ◽  
A. Cremins
Keyword(s):  
Low Cost ◽  
Electrical Characterization ◽  
Low Energy ◽  
Silicon On Insulator ◽  
Great Promise ◽  
Fully Depleted ◽  
Device Structures ◽  
Radiation Hard ◽  
Standard Energy

ABSTRACTSilicon-on-insulator (SOI) materials made by standard energy (150 to 200 keV) separation by implantation of oxygen (SIMOX) processes have shown great promise for meeting the needs of radiation-hard microelectronics. Since much smaller doses are required, low energy SIMOX (LES) reduces cost, improves radiation hardness, and increases the throughput of any ion implanter. The process can also produce high quality thin SIMOX structures that are of particular interest for fully depleted and submicron device structures. In this paper, we address the formation as well as the material and electrical characterization of LES wafers and compare them with standard SIMOX wafers.

scholarly journals High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors

2014 ◽  
Vol 104 (4) ◽  
pp. 043106 ◽  
Author(s):  
A. C. Betz ◽  
S. Barraud ◽  
Q. Wilmart ◽  
B. Plaçais ◽  
X. Jehl ◽  
...  
Keyword(s):  
Charge Transport ◽  
High Frequency ◽  
Silicon On Insulator ◽  
Nanowire Transistors
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