scholarly journals Characterization of Ultrathin Fully Depleted Silicon‐on‐Insulator Devices Using Subthreshold Slope Method

2020 ◽  
Vol 217 (24) ◽  
pp. 2000625
Author(s):  
Teimuraz Mchedlidze ◽  
Elke Erben
Keyword(s):  
Silicon On Insulator ◽  
Subthreshold Slope ◽  
Fully Depleted ◽  
Slope Method

High-frequency characterization of sub-0.25-/spl mu/m fully depleted silicon-on-insulator MOSFETs

2000 ◽  
Vol 21 (10) ◽  
pp. 497-499 ◽  
Author(s):  
C.L. Chen ◽  
R.H. Mathews ◽  
J.A. Burns ◽  
P.W. Wyatt ◽  
D.-R. Yost ◽  
...  
Keyword(s):  
High Frequency ◽  
Silicon On Insulator ◽  
Fully Depleted

Ultrathin Low Energy Simox for Low Cost, High Density Applications

1993 ◽  
Vol 316 ◽  
Author(s):  
Fereydoon Namavar ◽  
N.M. Kalkhoran ◽  
A. Cremins
Keyword(s):  
Low Cost ◽  
Electrical Characterization ◽  
Low Energy ◽  
Silicon On Insulator ◽  
Great Promise ◽  
Fully Depleted ◽  
Device Structures ◽  
Radiation Hard ◽  
Standard Energy

ABSTRACTSilicon-on-insulator (SOI) materials made by standard energy (150 to 200 keV) separation by implantation of oxygen (SIMOX) processes have shown great promise for meeting the needs of radiation-hard microelectronics. Since much smaller doses are required, low energy SIMOX (LES) reduces cost, improves radiation hardness, and increases the throughput of any ion implanter. The process can also produce high quality thin SIMOX structures that are of particular interest for fully depleted and submicron device structures. In this paper, we address the formation as well as the material and electrical characterization of LES wafers and compare them with standard SIMOX wafers.

scholarly journals Simulation of FDSOI-ISFET with Tunable Sensitivity by Temperature and Dual-Gate Structure

Electronics ◽  
2021 ◽  
Vol 10 (13) ◽  
pp. 1585
Author(s):  
Hanbin Wang ◽  
Jinshun Bi ◽  
Mengxin Liu ◽  
Tingting Han
Keyword(s):  
Gate Voltage ◽  
Computer Aided Design ◽  
Silicon On Insulator ◽  
Fully Depleted ◽  
Gate Structure ◽  
Different Temperatures ◽  
Dual Gate ◽  
Sensitivity Changes ◽  
Increasing Temperature ◽  
Aided Design

This work investigates the different sensitivities of an ion-sensitive field-effect transistor (ISFET) based on fully depleted silicon-on-insulator (FDSOI). Using computer-aided design (TCAD) tools, the sensitivity of a single-gate FDSOI based ISFET (FDSOI-ISFET) at different temperatures and the effects of the planar dual-gate structure on the sensitivity are determined. It is found that the sensitivity increases linearly with increasing temperature, reaching 890 mV/pH at 75 °C. By using a dual-gate structure and adjusting the control gate voltage, the sensitivity can be reduced from 750 mV/pH at 0 V control gate voltage to 540 mV/pH at 1 V control gate voltage. The above sensitivity changes are produced because the Nernst limit changes with temperature or the electric field generated by different control gate voltages causes changes in the carrier movement. It is proved that a single FDSOI-ISFET can have adjustable sensitivity by adjusting the operating temperature or the control gate voltage of the dual-gate device.

Supercoupling effect in short-channel ultrathin fully depleted silicon-on-insulator transistors

2015 ◽  
Vol 118 (18) ◽  
pp. 184504 ◽  
Author(s):  
C. Navarro ◽  
M. Bawedin ◽  
F. Andrieu ◽  
B. Sagnes ◽  
F. Martinez ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Short Channel ◽  
Fully Depleted
Sign in / Sign up

Export Citation Format

Share Document