scholarly journals High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors

2014 ◽  
Vol 104 (4) ◽  
pp. 043106 ◽  
Author(s):  
A. C. Betz ◽  
S. Barraud ◽  
Q. Wilmart ◽  
B. Plaçais ◽  
X. Jehl ◽  
...  
Keyword(s):  
Charge Transport ◽  
High Frequency ◽  
Silicon On Insulator ◽  
Nanowire Transistors

High-frequency characterization of sub-0.25-/spl mu/m fully depleted silicon-on-insulator MOSFETs

2000 ◽  
Vol 21 (10) ◽  
pp. 497-499 ◽  
Author(s):  
C.L. Chen ◽  
R.H. Mathews ◽  
J.A. Burns ◽  
P.W. Wyatt ◽  
D.-R. Yost ◽  
...  
Keyword(s):  
High Frequency ◽  
Silicon On Insulator ◽  
Fully Depleted

SOI CMOS TRANSISTORS FOR RF AND MICROWAVE APPLICATIONS

2001 ◽  
Vol 11 (04) ◽  
pp. 1159-1248 ◽  
Author(s):  
D. FLANDRE ◽  
J.-P. RASKIN ◽  
D. VANHOENACKER-JANVIER
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Transmission Lines ◽  
High Frequency ◽  
Silicon On Insulator ◽  
Low Power Consumption ◽  
New Model ◽  
Microwave Applications ◽  
High Degree

The new communication markets are vey demanding: high frequency, high degree of integration, low power consumption. Silicon-on-Insulator offers many advantages and this paper illustrates the potentialities of this technology for RF and microwave applictions. After an overview of the SOI material, the properties of the SOI MOSFET's are analyzed and compared to bulk Si MOSFET's. The models of transmission lines and inductors on SOI are compared and further used in the on-wafer characterization of the transistors. Various models for the transistors are presented and their limitations are given. A new model is described, valid from DC to the microwave region. This model agrees very well with the measurements for various transistor dimensions. Finally, variuos RF and microware circuits are presented. Ths paper does not fully describe all the properties and applications of SOI but the numerous references offered to the reader help him to gather more informations.

Fabrication and optoelectronic characterization of suspended In2O3 nanowire transistors

2021 ◽  
Vol 14 (1) ◽  
pp. 1-10
Author(s):  
JIANG Yi-yang ◽  
◽  
CHEN Yan ◽  
WANG Xu-dong ◽  
ZHAO Dong-yang ◽  
...  
Keyword(s):  
Nanowire Transistors

Characterization of Ni/γ-Al2O3 Catalyst Prepared by Atmospheric High Frequency Cold Plasma Jet for CO2 Reforming of CH4

2010 ◽  
Vol 31 (3) ◽  
pp. 353-359
Author(s):  
Xiaoyan CHAI ◽  
Shuyong SHANG ◽  
Gaihuan LIU ◽  
Xumei TAO ◽  
Xiang LI ◽  
...  
Keyword(s):  
High Frequency ◽  
Cold Plasma ◽  
Plasma Jet
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