Highly uniform and low turn-on voltage Si field emitter arrays fabricated using chemical mechanical polishing

Meng Ding;  Han Kim; A.I. Akinwande

doi:10.1109/55.821669

Highly uniform and low turn-on voltage Si field emitter arrays fabricated using chemical mechanical polishing

IEEE Electron Device Letters ◽

10.1109/55.821669 ◽

2000 ◽

Vol 21 (2) ◽

pp. 66-69 ◽

Cited By ~ 24

Author(s):

Meng Ding ◽

Han Kim ◽

A.I. Akinwande

Keyword(s):

Chemical Mechanical Polishing ◽

Mechanical Polishing ◽

Field Emitter ◽

Turn On ◽

Field Emitter Arrays ◽

Highly Uniform

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Fabrication and characterization of silicon field emitter arrays with focusing electrode by the chemical mechanical polishing process

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589911 ◽

1998 ◽

Vol 16 (2) ◽

pp. 811 ◽

Cited By ~ 10

Author(s):

Jin Ho Lee

Keyword(s):

Chemical Mechanical Polishing ◽

Mechanical Polishing ◽

Polishing Process ◽

Field Emitter ◽

Field Emitter Arrays ◽

Chemical Mechanical Polishing Process ◽

Fabrication And Characterization

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Chemical-mechanical-polishing: a new method for fabricating low capacitance silicon field emitter arrays with small gate apertures

IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012) ◽

10.1109/ivmc.1995.486983 ◽

2002 ◽

Cited By ~ 1

Author(s):

H.F. Gray ◽

J.L. Shaw ◽

D. Temple

Keyword(s):

Chemical Mechanical Polishing ◽

Mechanical Polishing ◽

New Method ◽

Field Emitter ◽

Field Emitter Arrays ◽

Low Capacitance

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Gold Overcoatings on Spindt-Type Field Emitter Arrays

MRS Proceedings ◽

10.1557/proc-424-387 ◽

1996 ◽

Vol 424 ◽

Cited By ~ 1

Author(s):

S. L. Skala ◽

D. A. Ohlberg ◽

A. A. Talin ◽

T. E. Felter

Keyword(s):

Electron Emission ◽

Current Noise ◽

Gold Deposition ◽

Field Emitter ◽

Emission Properties ◽

Turn On ◽

Field Emitter Arrays ◽

Before And After ◽

Emitter Array ◽

Field Emitter Array

ABSTRACTThe electron emission properties of a Spindt-type field emitter array have been measured before and after deposition of approximately 100 Å of gold. The workfunction of the emitter decreased by 5% after gold deposition resulting in an 11% reduction in turn-on voltage. Emission stability as measured by RMS current noise improved by 40%. Improvements in emission do not withstand exposure to air. However, baking at moderate temperatures (200°C) restores the emission improvements obtained with the gold overcoating. Fowler-Nordheim plots show that the enhanced emission after baking is due to a increase of the Fowler-Nordheim intercept and not a decrease in slope. Additionally, the gold over coatings resist poisoning as a 50,000 L dose of oxygen only slightly affects emission.

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Low turn-on voltage silicon field emitter arrays with atomically sharp tips

IVMC 2001. Proceedings of the 14th International Vacuum Microelectronics Conference (Cat. No.01TH8586) ◽

10.1109/ivmc.2001.939679 ◽

2002 ◽

Author(s):

Meng Ding ◽

A.I. Akinwande

Keyword(s):

Field Emitter ◽

Turn On ◽

Field Emitter Arrays

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Reduced turn-on voltage of nanocrystalline graphite (NCG) coated silicon field emitter arrays

IVMC 2001. Proceedings of the 14th International Vacuum Microelectronics Conference (Cat. No.01TH8586) ◽

10.1109/ivmc.2001.939745 ◽

2002 ◽

Author(s):

H.H. Busta ◽

J.M. Chen ◽

D.A. Furst ◽

S. Rizkowski ◽

A.T. Rakhimov ◽

...

Keyword(s):

Field Emitter ◽

Turn On ◽

Field Emitter Arrays ◽

Nanocrystalline Graphite

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Highly uniform silicon field emitter arrays fabricated using a trilevel resist process

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.5131656 ◽

2020 ◽

Vol 38 (2) ◽

pp. 023201 ◽

Cited By ~ 2

Author(s):

Nedeljko Karaulac ◽

Girish Rughoobur ◽

Akintunde I. Akinwande

Keyword(s):

Field Emitter ◽

Field Emitter Arrays ◽

Highly Uniform

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Comparison of Lateral Field Emitter Characteristics for Titanium Silicide, Poly-Si, and Single Crystal Si Tip

MRS Proceedings ◽

10.1557/proc-509-179 ◽

1998 ◽

Vol 509 ◽

Author(s):

Moo-Sup Lim ◽

Cheol-Min Park ◽

Min-Koo Han ◽

Yearn-Ik Choi

Keyword(s):

Current Density ◽

Emission Current Density ◽

Titanium Silicide ◽

Emission Current ◽

Cathode Voltage ◽

Lateral Field ◽

Field Emitter ◽

Turn On ◽

Field Emitter Arrays ◽

The Stability

AbstractWe have fabricated poly-Si, Si, and Ti-silicide field emitter arrays employing in-situ vacuum encapsulated lateral field emitter structures and investigated the field emission characteristics such as turn-on voltage, emission current density, and the stability of emission current. Although poly-Si and Si emitter have almost identical turn-on voltages, Si emitter has a sharper turn-on than poly-Si emitter due to its uniform surface. The current densities of poly-Si, and Si emtter are 0.47, 0.43 μA/tip respectively at anode to cathode voltage of 90 V. The turn-on voltage and current density of Ti-silicide emitter are about 31 V, and 1.81 μA/tip at VAK of 90 V. The data of the normalized current fluctuations indicate that Ti-silicide emitter has the most stable current.Our experiment shows that Ti-silicide is most promising among these three materials due to its low work function, uniform surface, and the stable characteristics.

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A new fabrication method of silicon field emitter array with local oxidation of polysilicon and chemical-mechanical-polishing

9th International Vacuum Microelectronics Conference ◽

10.1109/ivmc.1996.601854 ◽

2002 ◽

Cited By ~ 1

Author(s):

Jin Ho Lee ◽

Sung Weon Kang ◽

Sang Gi Kim ◽

Yoon-Ho Song ◽

Kyoung Ik Cho ◽

...

Keyword(s):

Chemical Mechanical Polishing ◽

Mechanical Polishing ◽

Fabrication Method ◽

Field Emitter ◽

Local Oxidation ◽

Emitter Array ◽

Field Emitter Array

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Applications Of Chemical-mechanical-polishing Process To Silicon Field Emitter Array

Proceedings of the Fourth Asian Symposium on Information Display ◽

10.1109/asid.1997.631423 ◽

1997 ◽

Cited By ~ 1

Author(s):

Jin Ho Lee ◽

Yoon-Ho Song ◽

Sung Weon Kang ◽

Byoung Gon Yu ◽

Kyoung Ik Cho ◽

...

Keyword(s):

Chemical Mechanical Polishing ◽

Mechanical Polishing ◽

Polishing Process ◽

Field Emitter ◽

Chemical Mechanical Polishing Process ◽

Emitter Array ◽

Field Emitter Array

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Silicon Field Emitter Array by Fast Anodization Method

MRS Proceedings ◽

10.1557/proc-621-r5.4.1 ◽

2000 ◽

Vol 621 ◽

Cited By ~ 1

Author(s):

Y.M. Fung ◽

W.Y. Cheung ◽

I.H. Wilson ◽

J.B. Xu ◽

S.P. Wong

Keyword(s):

Current Density ◽

Silicon Oxide ◽

Emission Current Density ◽

Field Emitter ◽

Turn On ◽

Field Emitter Arrays ◽

Isotropic Etching ◽

Field Emitters ◽

Emitter Array ◽

Field Emitter Array

ABSTRACTA new fast fabrication method entailing, two step anodization of silicon with different HF solutions was used to form a high aspect ratio silicon Field Emitter Array on n-type silicon (resistivity of 0.01cm). A Silicon oxide mask was used to define the field emitter array. The silicon substrate was pre-anodized with low current density for 1 minute in the dark and then anodized in HF:H2O:Ethanol solution. Finally, the porous silicon was removed by isotropic solution etching. The turn-on voltage of the fabricated field emitters was approximately 27V/μm when the emission current density reaches 1μA/cm2. This compares with the turn-on field of about 35V/μm on silicon tip array fabricated by using an isotropic etching solution of HNO3. We obtained field emitter arrays with good uniformity and reproducibility.

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