Negative differential resistance of a delta-doping-induced double-barrier quantum-well diode at room temperature

1990 ◽  
Vol 11 (10) ◽  
pp. 428-430 ◽  
Author(s):  
R.L. Wang ◽  
Y.-K. Su ◽  
Y.H. Wang ◽  
K.F. Yarn
Keyword(s):  
Quantum Well ◽  
Negative Differential Resistance ◽  
Room Temperature ◽  
Differential Resistance ◽  
Double Barrier ◽  
Delta Doping

THE THEORETICAL RESEARCH ON I-V CURVE IN MULTI-QUANTUM WELLS OF SEMICONDUCTORS

2006 ◽  
Vol 17 (04) ◽  
pp. 561-570
Author(s):  
BIN YANG ◽  
JIE ZHANG ◽  
YONG-FANG ZHAO ◽  
XIAO-GONG JING
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Theoretical Research ◽  
High Quality ◽  
Double Barrier ◽  
Multi Quantum Well ◽  
Double Barrier Structure ◽  
Good Agreement

The I-V curves in multi-quantum wells of different semiconductors are studied theoretically using the formalism of the transmission coefficient directly derived from Schrödinger equation. Al0.5Ga0.5As/GaAs double-barrier quantum well, Al0.29Ga0.71As/GaAs multi-quantum well, and AlSb/InAs double-barrier structure are calculated. The influences of well width, barrier width, temperature, Fermi energy on I-V characteristic curves are discussed in detail. Calculated results show that obvious negative differential resistance effects presented by our simulated I-V curves has a good agreement with previous experiments. Therefore, it can be a theoretical expectation to design experimentally high-quality semiconductor devices.

Negative differential resistance at room temperature from resonant tunnelling in GaInAs/InP double-barrier heterostructures

1987 ◽  
Vol 23 (3) ◽  
pp. 116 ◽  
Author(s):  
M. Razeghi ◽  
A. Tardella ◽  
R.A. Davies ◽  
A.P. Long ◽  
M.J. Kelly ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Room Temperature ◽  
Differential Resistance ◽  
Double Barrier ◽  
Resonant Tunnelling
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