Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes

2010 ◽  
Vol 97 (18) ◽  
pp. 181109 ◽  
Author(s):  
C. Bayram ◽  
Z. Vashaei ◽  
M. Razeghi
Keyword(s):  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Room Temperature ◽  
Aluminum Content ◽  
Differential Resistance ◽  
Resonant Tunneling Diodes ◽  
Double Barrier ◽  
Tunneling Diodes ◽  
Double Barrier Resonant Tunneling

Formation of Large Conduction Band Discontinuities of Heterointerfaces Using CdF2 AND CaF2 on Si(111)

1996 ◽  
Vol 448 ◽  
Author(s):  
Akira Izumi ◽  
Noriyuki Matsubara ◽  
Yusuke Kushida ◽  
Kazuo Tsutsui ◽  
Nikolai S. Sokolov
Keyword(s):  
Conduction Band ◽  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Room Temperature ◽  
Quantum Effect ◽  
Differential Resistance ◽  
Resonant Tunneling Diodes ◽  
Current Ratio ◽  
Si Substrates ◽  
Tunneling Diodes

AbstractWe proposed use of a new CdF2/CaF2 heterointerface for the formation of large conduction band discontinuities to apply quantum effect devices fabricated on Si substrates. Resonant tunneling diodes using this heterointerface on Si were fabricated and negative differential resistance whose P/V current ratio of 24 at highest was observed at room temperature.

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