Negative differential resistance at room temperature from resonant tunnelling in GaInAs/InP double-barrier heterostructures

1987 ◽  
Vol 23 (3) ◽  
pp. 116 ◽  
Author(s):  
M. Razeghi ◽  
A. Tardella ◽  
R.A. Davies ◽  
A.P. Long ◽  
M.J. Kelly ◽  
...  
2001 ◽  
Vol 676 ◽  
Author(s):  
B.S. Satyanarayana ◽  
A. Hiraki

ABSTRACTMultilayered cold cathodes made of spin coated nanocrystalline diamond and cathodic arc process grown nanocluster carbon films, were studied. The nanocrystalline diamond was first coated on to the substrate. The nanocluster carbon films were then deposited on the seeded nanocrystalline diamond coated substrates using the cathodic arc process at room temperature. Theresultant hetrostructured microcathodes were observed to exhibit electron emission currents of 1μA/cm2 at fields as low as 1.2 V/μm. Further some of the samples seem to exhibit I-V characteristics witha negative differential resistance region at room temperature conditions. This negative differential resistance or the resonant tunneling behaviour was observed to be dependent on the nanoseeded diamond size and concentration for a given nanocluster carbon film.


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