Operation of a novel negative differential conductance transistor fabricated in a strained Si quantum well

1997 ◽  
Vol 18 (9) ◽  
pp. 432-434 ◽  
Author(s):  
S.J. Koester ◽  
K. Ismail ◽  
K.Y. Lee ◽  
J.O. Chu
Keyword(s):  
Quantum Well ◽  
Differential Conductance ◽  
Strained Si ◽  
Negative Differential Conductance

Negative differential conductance in strained Si point contacts and wires

1997 ◽  
Vol 71 (11) ◽  
pp. 1528-1530 ◽  
Author(s):  
S. J. Koester ◽  
K. Ismail ◽  
K. Y. Lee ◽  
J. O. Chu
Keyword(s):  
Differential Conductance ◽  
Point Contacts ◽  
Strained Si ◽  
Negative Differential Conductance

New Approach to Negative Differential Conductance with High Peak-to-Valley Ratio in Silicon

2000 ◽  
Vol 39 (Part 1, No. 4B) ◽  
pp. 2246-2250 ◽  
Author(s):  
Junji Koga ◽  
Celine Vanderstraeten ◽  
Shin-ichi Takagi ◽  
Akira Toriumi
Keyword(s):  
High Peak ◽  
Differential Conductance ◽  
Negative Differential Conductance ◽  
New Approach ◽  
Peak To Valley Ratio

Zero Valley Splitting at Zero Magnetic Field for Strained Si/SiGe Quantum Wells

2007 ◽  
Vol 1017 ◽  
Author(s):  
Seungwon Lee ◽  
Paul von Allmen
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Brillouin Zone ◽  
Tilt Angle ◽  
Tight Binding ◽  
Direct Consequence ◽  
Zero Magnetic Field ◽  
Strained Si ◽  
Valley Splitting

AbstractThe electronic structure for a strained silicon quantum well grown on a tilted SiGe substrate is calculated using an empirical tight-binding method. For a zero substrate tilt angle the two lowest minima of the conduction band define a non-zero valley splitting at the center of the Brillouin zone. A finite tilt angle for the substrate results in displacing the two lowest conduction band minima to finite k0 and -k0 in the Brillouin zone with equal energy. The vanishing of the valley splitting for quantum wells grown on tilted substrates is found to be a direct consequence of the periodicity of the steps at the interfaces between the quantum well and the buffer materials.

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