Negative differential conductance in lateral double-barrier transistors fabricated in strained Si quantum wells

1997 ◽  
Vol 70 (18) ◽  
pp. 2422-2424 ◽  
Author(s):  
S. J. Koester ◽  
K. Ismail ◽  
K. Y. Lee ◽  
J. O. Chu
Keyword(s):  
Quantum Wells ◽  
Differential Conductance ◽  
Double Barrier ◽  
Strained Si ◽  
Negative Differential Conductance

Negative differential conductance in strained Si point contacts and wires

1997 ◽  
Vol 71 (11) ◽  
pp. 1528-1530 ◽  
Author(s):  
S. J. Koester ◽  
K. Ismail ◽  
K. Y. Lee ◽  
J. O. Chu
Keyword(s):  
Differential Conductance ◽  
Point Contacts ◽  
Strained Si ◽  
Negative Differential Conductance

New Approach to Negative Differential Conductance with High Peak-to-Valley Ratio in Silicon

2000 ◽  
Vol 39 (Part 1, No. 4B) ◽  
pp. 2246-2250 ◽  
Author(s):  
Junji Koga ◽  
Celine Vanderstraeten ◽  
Shin-ichi Takagi ◽  
Akira Toriumi
Keyword(s):  
High Peak ◽  
Differential Conductance ◽  
Negative Differential Conductance ◽  
New Approach ◽  
Peak To Valley Ratio

Feasibility Of Novel Si-Based Interminiband Lasers

1998 ◽  
Vol 533 ◽  
Author(s):  
Gregory Sun ◽  
Lionel Friedman ◽  
Richard A. Soref
Keyword(s):  
Quantum Wells ◽  
Current Density ◽  
Population Inversion ◽  
Heavy Hole ◽  
Optical Gain ◽  
Laser Structure ◽  
Strained Si ◽  
Superlattice Structures ◽  
A Current

AbstractWe have designed a parallel interminiband lasing in superlattice structures of coherently strained Si0.5Ge0.5/Si quantum wells (QWs). Population inversion is achieved between the non-parabolic heavy-hole valence minibands locally in-k-space. Lasing transition is at 5.4μm. Our analysis indicates that an optical gain of 134/cm can be obtained when the laser structure is pumped with a current density of 5kA/cm2.

Disorder effects on resonant tunneling in double-barrier quantum wells

1988 ◽  
Vol 38 (15) ◽  
pp. 10718-10723 ◽  
Author(s):  
P. A. Schulz ◽  
C. E. T. Gonçalves da Silva
Keyword(s):  
Quantum Wells ◽  
Resonant Tunneling ◽  
Double Barrier ◽  
Disorder Effects

Zero Valley Splitting at Zero Magnetic Field for Strained Si/SiGe Quantum Wells

2007 ◽  
Vol 1017 ◽  
Author(s):  
Seungwon Lee ◽  
Paul von Allmen
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Brillouin Zone ◽  
Tilt Angle ◽  
Tight Binding ◽  
Direct Consequence ◽  
Zero Magnetic Field ◽  
Strained Si ◽  
Valley Splitting

AbstractThe electronic structure for a strained silicon quantum well grown on a tilted SiGe substrate is calculated using an empirical tight-binding method. For a zero substrate tilt angle the two lowest minima of the conduction band define a non-zero valley splitting at the center of the Brillouin zone. A finite tilt angle for the substrate results in displacing the two lowest conduction band minima to finite k0 and -k0 in the Brillouin zone with equal energy. The vanishing of the valley splitting for quantum wells grown on tilted substrates is found to be a direct consequence of the periodicity of the steps at the interfaces between the quantum well and the buffer materials.

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