Analysis of negative differential conductance in a GaN/AlN multi-quantum-well avalanche photodiode

2018 ◽  
Author(s):  
Jianbin Kang ◽  
Wangping Wang ◽  
Lai Wang ◽  
Mo Li ◽  
Qian Li ◽  
...  
Keyword(s):  
Quantum Well ◽  
Avalanche Photodiode ◽  
Differential Conductance ◽  
Negative Differential Conductance ◽  
Multi Quantum Well

Mid-wavelength Infrared Avalanche Photodetector with AlAsSb/GaSb Superlattice

2021 ◽  
Author(s):  
Jiakai Li ◽  
Arash Dehzangi ◽  
Gail Brown ◽  
Manijeh Razeghi
Keyword(s):  
Quantum Well ◽  
Molecular Beam ◽  
Impact Ionization ◽  
Bulk Material ◽  
Avalanche Photodiode ◽  
Applied Bias ◽  
Ionization Coefficients ◽  
Multi Quantum Well ◽  
Ionization Ratio ◽  
Peak Value

Abstract This work demonstrates a mid-wavelength infrared separate absorption and multiplication avalanche photodiode (SAM-APD) with AlGaAsSb/GaSb multi-quantum well as the multiplication layer and InAsSb bulk material as the absorption layer. The InAsSb-based SAM-APD structure was grown by molecular beam epitaxy. The device exhibits a 100 % cut-off wavelength of ~5.3 µm at 150 K and ~5.6 µm at 200 K. At 150 K and 200 K, the responsivity of the SAM-APD reaches a peak value of 2.26 A/W and 3.84 A/W at 4.0 µm under -1.0 V applied bias, respectively. The SAM-APD device was designed to have electron dominated avalanching mechanism via the multi-quantum well structure as the avalanche architecture. A multiplication gain value of 29 at 200 K was achieved under −14.7 V bias voltage. The electron and hole impact ionization coefficients were calculated and compared. A carrier ionization ratio of ~0.097 was achieved at 200 K.

scholarly journals Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Jiakai Li ◽  
Arash Dehzangi ◽  
Gail Brown ◽  
Manijeh Razeghi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Structure ◽  
Quantum Well ◽  
Molecular Beam ◽  
Impact Ionization ◽  
Avalanche Photodiode ◽  
Multiplication Gain ◽  
Ionization Coefficients ◽  
Multi Quantum Well ◽  
Ionization Ratio

AbstractIn this work, a mid-wavelength infrared separate absorption and multiplication avalanche photodiode (SAM-APD) with 100% cut-off wavelength of ~ 5.0 µm at 200 K grown by molecular beam epitaxy was demonstrated. The InAsSb-based SAM-APD device was designed to have electron dominated avalanche mechanism via the band structure engineered multi-quantum well structure based on AlAsSb/GaSb H-structure superlattice and InAsSb material in the multiplication region. The device exhibits a maximum multiplication gain of 29 at 200 K under -14.7 bias voltage. The maximum multiplication gain value for the MWIR SAM-APD increases from 29 at 200 K to 121 at 150 K. The electron and hole impact ionization coefficients were derived and the large difference between their value was observed. The carrier ionization ratio for the MWIR SAM-APD device was calculated to be ~ 0.097 at 200 K.

scholarly journals Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature

2021 ◽  
Vol 118 (22) ◽  
pp. 221103
Author(s):  
P. Schmiedeke ◽  
A. Thurn ◽  
S. Matich ◽  
M. Döblinger ◽  
J. J. Finley ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Threshold Strain ◽  
Low Threshold ◽  
Nanowire Lasers ◽  
Multi Quantum Well

InGaN∕GaN multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates

2005 ◽  
Vol 87 (11) ◽  
pp. 111908 ◽  
Author(s):  
L. S. Wang ◽  
S. Tripathy ◽  
S. J. Chua ◽  
K. Y. Zang
Keyword(s):  
Quantum Well ◽  
Silicon On Insulator ◽  
Quantum Well Structures ◽  
Multi Quantum Well

New Approach to Negative Differential Conductance with High Peak-to-Valley Ratio in Silicon

2000 ◽  
Vol 39 (Part 1, No. 4B) ◽  
pp. 2246-2250 ◽  
Author(s):  
Junji Koga ◽  
Celine Vanderstraeten ◽  
Shin-ichi Takagi ◽  
Akira Toriumi
Keyword(s):  
High Peak ◽  
Differential Conductance ◽  
Negative Differential Conductance ◽  
New Approach ◽  
Peak To Valley Ratio

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

2007 ◽  
Vol 17 (01) ◽  
pp. 81-84
Author(s):  
J. Senawiratne ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Xia ◽  
Y. Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Stark Effect ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Green Emission ◽  
Luminescence Spectroscopy ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Multi Quantum Well

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.

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