Tunneling transport through a biased quantum dot–quantum well system: Photon-induced negative differential conductance

2007 ◽  
Vol 75 (4) ◽  
Author(s):  
V. M. Apalkov
2009 ◽  
Vol 150 (2) ◽  
pp. 022026 ◽  
Author(s):  
K Hitachi ◽  
A Inoue ◽  
A Oiwa ◽  
M Yamamoto ◽  
M Pioro-Ladriere ◽  
...  

2018 ◽  
Vol 32 (17) ◽  
pp. 1840029
Author(s):  
B. Kȩdzierska ◽  
A. Gorczyca-Goraj ◽  
E. Zipper ◽  
M. M. Maśka

We study spin-dependent transport through a quantum nanostructure composed of a quantum dot (QD) surrounded by a quantum nanoring. The nanostructure is side-attached to source and drain electrodes and we assume that the confining potential that forms the nanostructure can be controlled by electrical gating. We demonstrate that depending on the model parameters the system can exhibit positive as well as negative differential conductance (NDC). What is more interesting, these properties can be easily controlled by tuning the applied gate voltage.


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