The electrostatic charging damage on the characteristics and reliability of polysilicon thin-film transistors during plasma hydrogenation

1997 ◽  
Vol 18 (5) ◽  
pp. 187-189 ◽  
Author(s):  
Kan-Yuan Lee ◽  
Yean-Kuen Fang ◽  
Chii-Wen Chen ◽  
K.C. Huang ◽  
Mong-Song Liang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrostatic Charging ◽  
Plasma Hydrogenation

Structural Dimension Effects of Plasma Hydrogenation on Low-Temperature Poly-Si Thin Film Transistors

1994 ◽  
Vol 33 (Part 1, No. 1B) ◽  
pp. 649-653 ◽  
Author(s):  
Yong-Sang Kim ◽  
Kwon-Young Choi ◽  
Seong-Kyu Lee ◽  
Byung-Hyuk Min ◽  
Min-Koo Han
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Structural Dimension ◽  
Si Thin Film ◽  
Plasma Hydrogenation

Mechanism of Plasma Hydrogenation of Polysilicon Thin Film Transistors

1991 ◽  
Vol 138 (11) ◽  
pp. 3420-3424 ◽  
Author(s):  
Uday Mitra ◽  
Barbara Rossi ◽  
Babar Khan
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Plasma Hydrogenation

High performance polysilicon thin film transistors by H2O plasma hydrogenation

1997 ◽  
Vol 305 (1-2) ◽  
pp. 327-329 ◽  
Author(s):  
Kan Yuan Lee ◽  
Yean Kuen Fang ◽  
Chii Wen Chen ◽  
Mong Song Liang ◽  
Sou Gow Wuu
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Plasma Hydrogenation

High Performance Polysilicon Thin Film Transistors

1990 ◽  
Vol 182 ◽  
Author(s):  
U. Mitra ◽  
B.A. Khan ◽  
M. Venkatesan ◽  
A. Carlson ◽  
M. Vaez-Iravani
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
High Performance ◽  
Fabrication Process ◽  
Subthreshold Slope ◽  
Polysilicon Film ◽  
Polysilicon Tft ◽  
Plasma Hydrogenation

AbstractPolysilicon TFT characteristics are shown to be dependent on the nature of the polysilicon film used as well as the TFT fabrication process. Best results were obtained when silicon self-implant and regrowth techniques were used together with plasma hydrogenation. TFTs exhibiting a mobility of 115 cm2/V-sec, subthreshold slope of 0.27 V/decade, leakage current below 0.01 pA/μ;m, and an on-off ratio of 10 orders of magnitude have been fabricated.

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