The combined effects of low pressure NH/sub 3/-annealing and H/sub 2/ plasma hydrogenation on polysilicon thin-film transistors

1994 ◽  
Vol 15 (10) ◽  
pp. 389-390 ◽  
Author(s):  
Chien Kuo Yang ◽  
Tan Fu Lei ◽  
Chung Len Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Pressure ◽  
Combined Effects ◽  
Plasma Hydrogenation

The electrostatic charging damage on the characteristics and reliability of polysilicon thin-film transistors during plasma hydrogenation

1997 ◽  
Vol 18 (5) ◽  
pp. 187-189 ◽  
Author(s):  
Kan-Yuan Lee ◽  
Yean-Kuen Fang ◽  
Chii-Wen Chen ◽  
K.C. Huang ◽  
Mong-Song Liang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrostatic Charging ◽  
Plasma Hydrogenation

Growth of High Quality Fluorinated Silicon Dioxide for Thin Film Transistors

2002 ◽  
Vol 715 ◽  
Author(s):  
Roger Keen ◽  
Vikram L. Dalal
Keyword(s):  
Thin Film ◽  
Silicon Dioxide ◽  
Thin Film Transistors ◽  
Defect Density ◽  
Low Pressure ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Oxide Interface ◽  
High Quality ◽  
Interface Defect

AbstractThin film transistors(TFT) in microcrystalline and amorphous Si require high quality gate insulators that can be grown at low temperatures. In this paper, we show that one can oxidize Si wafers to produce high quality fluorinated silicon dioxide gate insulator using a low pressure remote plasma. The insulating film was grown on c-Si substrates using a low pressure ECR oxygen plasma, with small quantities of fluorine added to the mixture. Helium was used as the carrier gas for both oxygen and fluorine. The growth temperatures were in the range of 400–450 C. MOS type capacitors were made to judge the quality of the oxide/semiconductor interface, and interface defect densities were measured using capacitance-voltage techniques. It was found that when no fluorine was present in the oxide, the interface defect density was ∼1-2 x 1011/cm2 eV. The addition of F2 to oxygen immediately reduced the defect density by an order of magnitude, to ∼1.5 x 1010/cm2eV. The addition of more F2 slowly increased the defect density. Thermal cycling measurements showed that the semiconductor/oxide interface is very stable under cycling.

Structural Dimension Effects of Plasma Hydrogenation on Low-Temperature Poly-Si Thin Film Transistors

1994 ◽  
Vol 33 (Part 1, No. 1B) ◽  
pp. 649-653 ◽  
Author(s):  
Yong-Sang Kim ◽  
Kwon-Young Choi ◽  
Seong-Kyu Lee ◽  
Byung-Hyuk Min ◽  
Min-Koo Han
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Structural Dimension ◽  
Si Thin Film ◽  
Plasma Hydrogenation

Mechanism of Plasma Hydrogenation of Polysilicon Thin Film Transistors

1991 ◽  
Vol 138 (11) ◽  
pp. 3420-3424 ◽  
Author(s):  
Uday Mitra ◽  
Barbara Rossi ◽  
Babar Khan
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Plasma Hydrogenation

High performance polysilicon thin film transistors by H2O plasma hydrogenation

1997 ◽  
Vol 305 (1-2) ◽  
pp. 327-329 ◽  
Author(s):  
Kan Yuan Lee ◽  
Yean Kuen Fang ◽  
Chii Wen Chen ◽  
Mong Song Liang ◽  
Sou Gow Wuu
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Plasma Hydrogenation
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