High Performance Polysilicon Thin Film Transistors
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AbstractPolysilicon TFT characteristics are shown to be dependent on the nature of the polysilicon film used as well as the TFT fabrication process. Best results were obtained when silicon self-implant and regrowth techniques were used together with plasma hydrogenation. TFTs exhibiting a mobility of 115 cm2/V-sec, subthreshold slope of 0.27 V/decade, leakage current below 0.01 pA/μ;m, and an on-off ratio of 10 orders of magnitude have been fabricated.
1997 ◽
Vol 305
(1-2)
◽
pp. 327-329
◽
2010 ◽
Vol 130
(2)
◽
pp. 161-166
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