High-performance submicrometer undergated thin-film transistors without high-temperature rapid thermal annealing or plasma hydrogenation

1993 ◽  
Vol 14 (8) ◽  
pp. 382-384 ◽  
Author(s):  
C.T. Liu ◽  
K.H. Lee
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors ◽  
High Performance ◽  
Temperature Rapid Thermal Annealing ◽  
Plasma Hydrogenation

Performance Enhancement of Channel-Engineered Al–Zn–Sn–O Thin-Film Transistors with Highly Conductive In–Ga–Zn–O Buried Layer via Vacuum Rapid Thermal Annealing

2020 ◽  
Vol 20 (8) ◽  
pp. 4671-4677
Author(s):  
Sung-Hun Kim ◽  
Won-Ju Cho
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Temperature Stress ◽  
Rapid Thermal Annealing ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Bias ◽  
Buried Layer ◽  
Bias Temperature Stress

In this study, we propose, fabricate, and examine the electrical characteristics of high-performance channel-engineered amorphous aluminum-doped zinc tin oxide (a-AZTO) thin-film transistors (TFTs). Amorphous indium gallium zinc oxide (a-IGZO) film with improved conductivity (obtained via rapid thermal annealing in vacuum) is applied as the local conductive buried layer (LCBL) of the channel-engineered a-AZTO TFTs. The optical transmittance of the a-IGZO and a-AZTO films in the visible region is >85%. The a-IGZO LCBL reduces the resistance of the a-AZTO channel, thereby resulting in increased drain current and improved device performance. We find that our fabricated channel-engineered a-AZTO TFTs with LCBLs are superior to non-channel-engineered a-AZTO TFTs without LCBLs in terms of electrical properties such as the threshold voltage, mobility, subthreshold swing, and on–off current ratios. In particular, as the a-IGZO LCBL length at the bottom of the channel increases, the channel resistance gradually decreases, eventually resulting in a mobility of 22.8 cm2/V · s, subthreshold swing of 470 mV/dec, and on–off current ratio of 3.98×107. We also investigate the effect of the a-IGZO LCBL on the operational reliability of a-AZTO TFTs by measuring the variation in the threshold voltage for positive gate bias temperature stress (PBTS), negative gate bias temperature stress (NBTS), and negative gate bias temperature illumination stress (NBTIS). The results indicate that the TFT instability for temperature and light is not affected by the LCBL. Therefore, our proposed channel-engineered a-AZTO TFT can form a promising high-performance high-reliability switching device for next-generation displays.

The effects of rapid thermal annealing on the performance of ZnO thin-film transistors

2009 ◽  
Vol 55 (5(1)) ◽  
pp. 1925-1930 ◽  
Author(s):  
Duck-Kyun Choi ◽  
Chan Jun Park ◽  
Sung Bo Lee ◽  
Young-Woong Kim
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors ◽  
Zno Thin Film

Thin-Film Transistors with Polycrystalline Silicon Films Prepared by Two-Step Rapid Thermal Annealing

2000 ◽  
Vol 39 (Part 2, No. 1A/B) ◽  
pp. L19-L21 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Chun-Yao Huang ◽  
Fang-Shing Wang ◽  
Kuen-Hsien Lin ◽  
Fu-Gow Tarntair
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Effect of rapid thermal annealing on pentacene-based thin-film transistors

2011 ◽  
Vol 61 (1) ◽  
pp. 76-80 ◽  
Author(s):  
D.W. Chou ◽  
C.J. Huang ◽  
C.M. Su ◽  
C.F. Yang ◽  
W.R. Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors

Study of GaN thin layers subjected to high-temperature rapid thermal annealing

1998 ◽  
Vol 32 (10) ◽  
pp. 1048-1053 ◽  
Author(s):  
N. I. Katsavets ◽  
G. M. Laws ◽  
I. Harrison ◽  
E. C. Larkins ◽  
T. M. Benson ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Layers ◽  
Temperature Rapid Thermal Annealing

Morphology and photoluminescence improvements from high‐temperature rapid thermal annealing of GaN

1996 ◽  
Vol 68 (2) ◽  
pp. 200-202 ◽  
Author(s):  
J. C. Zolper ◽  
M. Hagerott Crawford ◽  
A. J. Howard ◽  
J. Ramer ◽  
S. D. Hersee
Keyword(s):  
High Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Temperature Rapid Thermal Annealing
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