Single-structure heater and temperature sensor using a p-type polycrystalline diamond resistor

1996 ◽  
Vol 17 (5) ◽  
pp. 250-252 ◽  
Author(s):  
G.S. Yang ◽  
D.M. Aslam
Keyword(s):  
Temperature Sensor ◽  
Polycrystalline Diamond ◽  
Single Structure ◽  
P Type

scholarly journals Schottky diode temperature sensor for pressure sensor

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Schottky Diode ◽  
Pressure Sensor ◽  
Temperature Sensor ◽  
Temperature Compensation ◽  
Operating Conditions ◽  
Temperature Range ◽  
Low Leakage ◽  
Low Leakage Current ◽  
P Type ◽  
Sensor Errors

The small silicon chip of Schottky diode (0.8x0.8x0.4 mm<sup>3</sup>) with planar arrangement of electrodes (chip PSD) as temperature sensor, which functions under the operating conditions of pressure sensor, was developed. The forward I-V characteristic of chip PSD is determined by potential barrier between Mo and n-Si (N<sub>D</sub> = 3 × 10<sup>15</sup> cm<sup>-3</sup>). Forward voltage U<sub>F</sub> = 208 ± 6 mV and temperature coefficient TC = -1.635 ± 0.015 mV/⁰C (with linearity k<sub>T</sub> <0.4% for temperature range of -65 to +85 ⁰C) at supply current I<sub>F</sub> = 1 mA is achieved. The reverse I-V characteristic has high breakdown voltage U<sub>BR</sub> > 85 V and low leakage current I<sub>L</sub> < 5 μA at 25 ⁰C and I<sub>L</sub> < 130 μA at 85 ⁰C (U<sub>R</sub> = 20 V) because chip PSD contains the structure of two p-type guard rings along the anode perimeter. The application of PSD chip for wider temperature range from -65 to +115 ⁰C is proved. The separate chip PSD of temperature sensor located at a distance of less than 1.5 mm from the pressure sensor chip. The PSD chip transmits input data for temperature compensation of pressure sensor errors by ASIC and for direct temperature measurement.

Polycrystalline Diamond Film Resistors

1992 ◽  
Vol 242 ◽  
Author(s):  
L. M. Edwards ◽  
J. L. Davidson
Keyword(s):  
Diamond Film ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Plasma Cvd ◽  
Microwave Plasma Cvd ◽  
P Type ◽  
Polycrystalline Diamond Film ◽  
Effective Source

ABSTRACTThe technology to fabricate polycrystalline diamond film resistors has been initiated using modified thick film patterning techniques and in situ solid source doping.Doping of polycrystalline diamond films in microwave plasma CVD systems has been achieved historically through use of diborane gas, which may contaminate the deposition system causing all diamond films thereafter to be doped p-type. We have attempted noncontaminating in situ doping utilizing two solid source dopants, and have met with preliminary success.The more effective source (B2O3) produces a fairly even dopant concentration across the substrate, with sheet resistances ranging from 800 ohms per square to 4500 ohms per square. The other source (BN) showed significant doping in a narrow band surrounding the source, but the doping concentration decreased rapidly with distance from the source. Films grown afterwards with no doping were evaluated through resistance measurements; no evidence of doping contamination was observed.

Electrical Properties of Hydrogen Terminated P-Type Diamond Film

2010 ◽  
Vol 663-665 ◽  
pp. 625-628
Author(s):  
Fu Yuan Xia ◽  
Lin Jun Wang ◽  
Jian Huang ◽  
Ke Tang ◽  
Ji Jun Zhang ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
P Type ◽  
Effect Method

Undoped high quality polycrystalline diamond films were grown by the microwave plasma chemical vapor deposition (MPCVD) method. The effects of hydrogen plasma treatment and vacuum annealing process on the p-type behavior of diamond films were investigated by the Hall effect method. The sheet carrier concentration increased and the sheet resistivity decreased with the treating time of hydrogen plasma and a stable value was achieved finally. After annealing the samples in vacuum at temperature above 600 °C, the sheet carrier concentration dropped dramatically. The origin of this hydrogen terminated p-type conductive layers is also discussed.

The characterization of single structure diamond heater and temperature sensor

1997 ◽  
Vol 6 (2-4) ◽  
pp. 394-397 ◽  
Author(s):  
G.S. Yang ◽  
D.M. Aslam ◽  
M. White ◽  
J.J. McGrath
Keyword(s):  
Temperature Sensor ◽  
Single Structure

scholarly journals The Hydrogenation Impact on Electronic Properties of p-Diamond/n-Si Heterojunctions

Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6615
Author(s):  
Szymon Łoś ◽  
Kazimierz Fabisiak ◽  
Kazimierz Paprocki ◽  
Mirosław Szybowicz ◽  
Anna Dychalska ◽  
...  
Keyword(s):  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Cvd Diamond ◽  
Point Of View ◽  
Hydrogen Passivation ◽  
Temperature Dependent ◽  
Current Voltage ◽  
P Type ◽  
Hot Filament

The undoped polycrystalline diamond films (PDFs) have been deposited on n-type silicon (Si) by Hot Filament Chemical Vapor Deposition (HF CVD) technique. The reaction gases are a mixture of methane and hydrogen. The obtained PDFs were characterized by scanning electron microscopy (SEM) and Raman spectroscopy which, in addition to the diamond phase, also confirms the presence of sp2 hybridized carbon bonds. As-grown CVD diamond layers are hydrogen terminated and show p-type conductivity. The effect of the level of hydrogenation on the electrical properties of p-diamond/n-Si heterojunctions has been investigated by temperature dependent current–voltage (J-V/T) characteristics. The obtained results suggest that the energy distribution of interface states at the grain boundary (GB) subjected to hydrogenation becomes shallower, and the hole capture cross-section can be reduced. Hydrogenation can lead to a significant reduction of the GB potential barrier. These results can be interesting from the point of view of hydrogen passivation of GBs in microelectronics.

Temperature Sensor On Boron Ion Implanted Diamond

1995 ◽  
Vol 416 ◽  
Author(s):  
R. Job ◽  
A. V. Denisenko ◽  
A. M. Zaitsev ◽  
M. Werner ◽  
A. A. Melnikov ◽  
...  
Keyword(s):  
Activation Energy ◽  
Temperature Sensor ◽  
Boron Concentration ◽  
Theoretical Models ◽  
Boron Doped Diamond ◽  
Compensation Ratio ◽  
Boron Doped ◽  
Sensor Fabrication ◽  
Postimplantation Annealing ◽  
P Type

ABSTRACTp-type semiconducting boron doped layers have been fabricated on diamond substrates by ion implantation and subsequent annealing. A number of the related published experimental data and theoretical models on electrical properties of boron doped diamond are analyzed with regard to the temperature coefficient of resistance (TCR) of temperature sensors. The dependencies of the conductivity and activation energy on three parameters: (i) boron doping level NA, (ii) electrical compensation ratio ND/NA- C and (iii) duration of the postimplantation annealing time ta are studied. By variation of NA, C and t, an optimized technological regime for the temperature sensor fabrication can be obtained. One can summarize that: 1) the TCR value is not remarkably reduced with the boron concentration up to NA -1019 cm-3, 2) an increase of the electrical compensation decreases the activation energy and consequently the TCR coefficient,3) 1 h annealing at 1500°C is sufficient to remove the compensating radiation defects, 4) the variation of the ta from 1 min to 1 h changes the TCR value by 20% to 30%. Technological steps of the fabrication of a micro temperature sensor are given.

Control of current-jump induced by voltage, temperature, light in p-type GaAs: Programmable critical temperature sensor

2009 ◽  
Vol 95 (23) ◽  
pp. 231910 ◽  
Author(s):  
Sungyoul Choi ◽  
Bong-Jun Kim ◽  
Yong Wook Lee ◽  
Yong Sik Lim ◽  
Jeongyong Choi ◽  
...  
Keyword(s):  
Critical Temperature ◽  
Temperature Sensor ◽  
P Type
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