Control of current-jump induced by voltage, temperature, light in p-type GaAs: Programmable critical temperature sensor

2009 ◽  
Vol 95 (23) ◽  
pp. 231910 ◽  
Author(s):  
Sungyoul Choi ◽  
Bong-Jun Kim ◽  
Yong Wook Lee ◽  
Yong Sik Lim ◽  
Jeongyong Choi ◽  
...  
Keyword(s):  
Critical Temperature ◽  
Temperature Sensor ◽  
P Type

scholarly journals Schottky diode temperature sensor for pressure sensor

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Schottky Diode ◽  
Pressure Sensor ◽  
Temperature Sensor ◽  
Temperature Compensation ◽  
Operating Conditions ◽  
Temperature Range ◽  
Low Leakage ◽  
Low Leakage Current ◽  
P Type ◽  
Sensor Errors

The small silicon chip of Schottky diode (0.8x0.8x0.4 mm<sup>3</sup>) with planar arrangement of electrodes (chip PSD) as temperature sensor, which functions under the operating conditions of pressure sensor, was developed. The forward I-V characteristic of chip PSD is determined by potential barrier between Mo and n-Si (N<sub>D</sub> = 3 × 10<sup>15</sup> cm<sup>-3</sup>). Forward voltage U<sub>F</sub> = 208 ± 6 mV and temperature coefficient TC = -1.635 ± 0.015 mV/⁰C (with linearity k<sub>T</sub> <0.4% for temperature range of -65 to +85 ⁰C) at supply current I<sub>F</sub> = 1 mA is achieved. The reverse I-V characteristic has high breakdown voltage U<sub>BR</sub> > 85 V and low leakage current I<sub>L</sub> < 5 μA at 25 ⁰C and I<sub>L</sub> < 130 μA at 85 ⁰C (U<sub>R</sub> = 20 V) because chip PSD contains the structure of two p-type guard rings along the anode perimeter. The application of PSD chip for wider temperature range from -65 to +115 ⁰C is proved. The separate chip PSD of temperature sensor located at a distance of less than 1.5 mm from the pressure sensor chip. The PSD chip transmits input data for temperature compensation of pressure sensor errors by ASIC and for direct temperature measurement.

Temperature Sensor On Boron Ion Implanted Diamond

1995 ◽  
Vol 416 ◽  
Author(s):  
R. Job ◽  
A. V. Denisenko ◽  
A. M. Zaitsev ◽  
M. Werner ◽  
A. A. Melnikov ◽  
...  
Keyword(s):  
Activation Energy ◽  
Temperature Sensor ◽  
Boron Concentration ◽  
Theoretical Models ◽  
Boron Doped Diamond ◽  
Compensation Ratio ◽  
Boron Doped ◽  
Sensor Fabrication ◽  
Postimplantation Annealing ◽  
P Type

ABSTRACTp-type semiconducting boron doped layers have been fabricated on diamond substrates by ion implantation and subsequent annealing. A number of the related published experimental data and theoretical models on electrical properties of boron doped diamond are analyzed with regard to the temperature coefficient of resistance (TCR) of temperature sensors. The dependencies of the conductivity and activation energy on three parameters: (i) boron doping level NA, (ii) electrical compensation ratio ND/NA- C and (iii) duration of the postimplantation annealing time ta are studied. By variation of NA, C and t, an optimized technological regime for the temperature sensor fabrication can be obtained. One can summarize that: 1) the TCR value is not remarkably reduced with the boron concentration up to NA -1019 cm-3, 2) an increase of the electrical compensation decreases the activation energy and consequently the TCR coefficient,3) 1 h annealing at 1500°C is sufficient to remove the compensating radiation defects, 4) the variation of the ta from 1 min to 1 h changes the TCR value by 20% to 30%. Technological steps of the fabrication of a micro temperature sensor are given.

scholarly journals Schottky diode temperature sensor for pressure sensor

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Schottky Diode ◽  
Pressure Sensor ◽  
Temperature Sensor ◽  
Temperature Compensation ◽  
Operating Conditions ◽  
Temperature Range ◽  
Low Leakage ◽  
Low Leakage Current ◽  
P Type ◽  
Sensor Errors

The small silicon chip of Schottky diode (0.8x0.8x0.4 mm<sup>3</sup>) with planar arrangement of electrodes (chip PSD) as temperature sensor, which functions under the operating conditions of pressure sensor, was developed. The forward I-V characteristic of chip PSD is determined by potential barrier between Mo and n-Si (N<sub>D</sub> = 3 × 10<sup>15</sup> cm<sup>-3</sup>). Forward voltage U<sub>F</sub> = 208 ± 6 mV and temperature coefficient TC = -1.635 ± 0.015 mV/⁰C (with linearity k<sub>T</sub> <0.4% for temperature range of -65 to +85 ⁰C) at supply current I<sub>F</sub> = 1 mA is achieved. The reverse I-V characteristic has high breakdown voltage U<sub>BR</sub> > 85 V and low leakage current I<sub>L</sub> < 5 μA at 25 ⁰C and I<sub>L</sub> < 130 μA at 85 ⁰C (U<sub>R</sub> = 20 V) because chip PSD contains the structure of two p-type guard rings along the anode perimeter. The application of PSD chip for wider temperature range from -65 to +115 ⁰C is proved. The separate chip PSD of temperature sensor located at a distance of less than 1.5 mm from the pressure sensor chip. The PSD chip transmits input data for temperature compensation of pressure sensor errors by ASIC and for direct temperature measurement.

scholarly journals Superconductivity in CaBi2

2016 ◽  
Vol 18 (31) ◽  
pp. 21737-21745 ◽  
Author(s):  
M. J. Winiarski ◽  
B. Wiendlocha ◽  
S. Gołąb ◽  
S. K. Kushwaha ◽  
P. Wiśniewski ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Critical Temperature ◽  
Single Crystals ◽  
Type I ◽  
Spin Orbit ◽  
Spin Orbit Interactions ◽  
P Type

Type-I superconductivity is observed with critical temperature Tc = 2.0 K in self-flux-grown single crystals of CaBi2. Calculations show the importance of spin–orbit interactions on the electronic structure.

scholarly journals Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor

2007 ◽  
Vol 90 (2) ◽  
pp. 023515 ◽  
Author(s):  
Bong-Jun Kim ◽  
Yong Wook Lee ◽  
Byung-Gyu Chae ◽  
Sun Jin Yun ◽  
Soo-Young Oh ◽  
...  
Keyword(s):  
Critical Temperature ◽  
Temperature Dependence ◽  
Temperature Sensor ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
First Order
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