Ion Implantation in Semiconductors
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Published By Springer US

9781468421538, 9781468421514

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Noise Characteristics in the Low Frequency Range of Ion-Implanted-Base-Transistor (NPN Type)

Ion Implantation in Semiconductors ◽

10.1007/978-1-4684-2151-4_83 ◽

1975 ◽

pp. 655-661

Author(s):

Tetsu Kōji

Keyword(s):

Low Frequency ◽

Frequency Range ◽

Noise Characteristics ◽

Ion Implanted

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Control of Secondary Defects by Tin Diffusion in Ion Implanted Silicon Crystals

Ion Implantation in Semiconductors ◽

10.1007/978-1-4684-2151-4_72 ◽

1975 ◽

pp. 577-584

Author(s):

G. Nakamura ◽

Y. Yukimoto ◽

Y. Hirose

Keyword(s):

Silicon Crystals ◽

Ion Implanted

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Recovery of Silicon Layers Damaged by Low Energy Ion Bombardment

Ion Implantation in Semiconductors ◽

10.1007/978-1-4684-2151-4_69 ◽

1975 ◽

pp. 547-552 ◽

Cited By ~ 3

Author(s):

R. Prisslinger ◽

S. Kalbitzer ◽

H. Kräutle ◽

J. J. Grob ◽

P. Siffert

Keyword(s):

Ion Bombardment ◽

Low Energy

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Backscattering and ESR Studies in Heavily Damaged Layer

Ion Implantation in Semiconductors ◽

10.1007/978-1-4684-2151-4_60 ◽

1975 ◽

pp. 473-483 ◽

Cited By ~ 2

Author(s):

Kohzoh Masuda

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Generation of Knock-Ons in Solids Bombarded with Energetic Ions and Energy Partition Relations

Ion Implantation in Semiconductors ◽

10.1007/978-1-4684-2151-4_54 ◽

1975 ◽

pp. 429-436

Author(s):

T. Tsurushima ◽

H. Tanoue

Keyword(s):

Energy Partition ◽

Energetic Ions ◽

Partition Relations

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Implantation of Silicon Into Gallium Arsenide

Ion Implantation in Semiconductors ◽

10.1007/978-1-4684-2151-4_5 ◽

1975 ◽

pp. 41-46 ◽

Cited By ~ 4

Author(s):

T. Miyazaki ◽

M. Tamura

Keyword(s):

Gallium Arsenide

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Ionized-Cluster Beam Deposition

Ion Implantation in Semiconductors ◽

10.1007/978-1-4684-2151-4_43 ◽

1975 ◽

pp. 341-346 ◽

Cited By ~ 1

Author(s):

T. Takagi ◽

I. Yamada ◽

K. Yanagawa

Keyword(s):

Cluster Beam ◽

Cluster Beam Deposition ◽

Beam Deposition

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Nitrogen Implantation in SiC: Lattice Disorder and Foreign-Atom Location Studies

Ion Implantation in Semiconductors ◽

10.1007/978-1-4684-2151-4_37 ◽

1975 ◽

pp. 291-298 ◽

Cited By ~ 5

Author(s):

A. B. Campbell ◽

J. Shewchun ◽

D. A. Thompson ◽

J. A. Davies ◽

J. B. Mitchell

Keyword(s):

Nitrogen Implantation ◽

Foreign Atom ◽

Lattice Disorder

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Ion-Bombardment-Induced Surface Expansion of Solids

Ion Implantation in Semiconductors ◽

10.1007/978-1-4684-2151-4_36 ◽

1975 ◽

pp. 285-290 ◽

Cited By ~ 2

Author(s):

H. Tanoue ◽

T. Tsurushima

Keyword(s):

Ion Bombardment ◽

Surface Expansion

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Implantation of Boron and Lithium in Semiconductors and Metals

Ion Implantation in Semiconductors ◽

10.1007/978-1-4684-2151-4_27 ◽

1975 ◽

pp. 211-218 ◽

Cited By ~ 7

Author(s):

J. P. Biersack ◽

D. Fink

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