scholarly journals The electrical properties of sub-5-nm oxynitride dielectrics prepared in a nitric oxide ambient using rapid thermal processing

1994 ◽  
Vol 15 (12) ◽  
pp. 516-518 ◽  
Author(s):  
Z.-Q. Yao ◽  
H.B. Harrison ◽  
S. Dimitrijev ◽  
Y.T. Yeow
Keyword(s):  
Nitric Oxide ◽  
Electrical Properties ◽  
Thermal Processing ◽  
Rapid Thermal Processing

Electrical properties of thin SiO2 films nitrided in N2O by rapid thermal processing

1992 ◽  
Vol 19 (1-4) ◽  
pp. 657-660
Author(s):  
M. Severi ◽  
G. Mattei ◽  
L. Dori ◽  
P. Maccagnani ◽  
G.L. Baldini ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Sio2 Films

Nitrogen-Atom Bonding at Sio2/SI Interfaces in Metalinsulator-Semiconductor (MIS) Stacked Gates Made by Integration of Plasma Assisted Oxidation-Deposition and Rapid Thermal Processing

1993 ◽  
Vol 303 ◽  
Author(s):  
Y. Ma ◽  
T. YAsuda ◽  
G. Lucovsky
Keyword(s):  
Electrical Properties ◽  
Thermal Processing ◽  
High Frequency ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Rapid Thermal Processing ◽  
Atom Concentration ◽  
Bonding Structure ◽  
Static Capacitance ◽  
Capacitance Voltage

ABSTRACTSiO2 thin films were deposited by remote PECVD on Si surfaces exposed to species generated in O2/N2 and O2/NH3 plasmas. The surface chemistry was studied by Auger Electron Spectroscopy, AES, and the electrical properties of the SiO2/Si interface by high frequency and quasi-static Capacitance-Voltage, C-V, measurements. The AES results showed that Ccontamination was removed by exposure to both plasma-excited gas mixtures, but that N-atoms were incorporated into the SiO2 film, and Si-N bonds were formed at the SiO2/Si interface. C-V measurements indicated that the Si-N bonding structure, rather than the N-atom concentration, is critical in determining the interface electrical properties. The effects of Rapid Thermal Annealing, RTA, on the electrical properties of these SiO2/Si interfaces were also studied.

An XPS Study of Silicon Oxynitride Rapid Thermally Grown in Nitric Oxide

1999 ◽  
Vol 592 ◽  
Author(s):  
W. H. Lai ◽  
M. F. Li ◽  
J. S. Pan ◽  
R. Liu ◽  
L. Chan ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Growth Rate ◽  
Measurement Uncertainty ◽  
Thermal Processing ◽  
State Of The Art ◽  
Rapid Thermal Processing ◽  
Growth Characteristics ◽  
Silicon Oxynitride ◽  
Temperature And Pressure ◽  
Xps Study

ABSTRACTEarlier growth studies on the rapid thermal oxidation of silicon in NO (RTNO) were not sufficiently comprehensive and were limited by temperature measurement uncertainty and thermal non-uniformity across the wafer. Using a state-of-the-art rapid thermal processing (RTP) system, the RTNO growth characteristics at 100 and 760 Torr, from 900 to 1200°C and from 0 to 480 s were investigated. It was found that the initial growth rate anomalously decreasedwith temperature and pressure. These anomalies were correlated to the evolution of the XPS N 1s spectrum of the RTNO film with oxidation time, temperature and pressure.

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